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Datasheet IRF7834 PDF ( 特性, スペック, ピン接続図 )

部品番号 IRF7834
部品説明 Power MOSFET
メーカ International Rectifier
ロゴ International Rectifier ロゴ 
プレビュー
Total 10 pages
		
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IRF7834 Datasheet, IRF7834 PDF,ピン配置, 機能
Applications
l Synchronous MOSFET for Notebook
Processor Power
l Synchronous Rectifier MOSFET for
Isolated DC-DC Converters in
Networking Systems
Benefits
l Very Low RDS(on) at 4.5V VGS
l Ultra-Low Gate Impedance
l Fully Characterized Avalanche Voltage
and Current
l 20V VGS Max. Gate Rating
PD - 94761
IRF7834
HEXFET® Power MOSFET
VDSS
RDS(on) max
Qg (typ.)
30V 4.5m:@VGS = 10V 29nC
S1
S2
S3
G4
AA
8D
7D
6D
5D
Top View
SO-8
Absolute Maximum Ratings
Parameter
VDS Drain-to-Source Voltage
VGS
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
cPulsed Drain Current
fPower Dissipation
fPower Dissipation
TJ
TSTG
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Thermal Resistance
Parameter
gRθJL Junction-to-Drain Lead
fgRθJA Junction-to-Ambient
Max.
30
± 20
19
16
160
2.5
1.6
0.02
-55 to + 150
Units
V
A
W
W/°C
°C
Typ.
–––
–––
Max.
20
50
Units
°C/W
Notes  through … are on page 10
www.irf.com
1
2/26/04

1 Page



IRF7834 pdf, ピン配列
1000
100
10
VGS
TOP
10V
4.5V
3.8V
3.5V
3.3V
3.0V
2.8V
BOTTOM 2.5V
1
0.1
0.1
2.5V
> 60µs PULSE WIDTH
Tj = 25°C
1 10
VDS, Drain-to-Source Voltage (V)
100
Fig 1. Typical Output Characteristics
IRF7834
1000
100
VGS
TOP
10V
4.5V
3.8V
3.5V
3.3V
3.0V
2.8V
BOTTOM 2.5V
10 2.5V
1
0.1
> 60µs PULSE WIDTH
Tj = 150°C
1 10
VDS, Drain-to-Source Voltage (V)
100
Fig 2. Typical Output Characteristics
1000.00
100.00
10.00
TJ = 150°C
1.00
0.10
0.01
2.0
TJ = 25°C
VDS = 10V
> 60µs PULSE WIDTH
3.0
VGS, Gate-to-Source Voltage (V)
4.0
Fig 3. Typical Transfer Characteristics
www.irf.com
1.5
ID = 20A
VGS = 10V
1.0
0.5
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Junction Temperature (°C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3


3Pages


IRF7834 電子部品, 半導体
IRF7834
20
ID = 20A
16
12
8
4
0
2.0
TJ = 125°C
TJ = 25°C
4.0 6.0 8.0
VGS, Gate-to-Source Voltage (V)
10.0
Fig 12. On-Resistance Vs. Gate Voltage
15V
VDS
L
DRIVER
RG
2V0GVS
tp
D.U.T
IAS
0.01
+
-
VDD
A
Fig 13a. Unclamped Inductive Test Circuit
V(BR)DSS
tp
100
ID
TOP 5.9A
80 6.7A
BOTTOM 16A
60
40
20
0
25
50 75 100 125
Starting TJ, Junction Temperature (°C)
150
Fig 13c. Maximum Avalanche Energy
Vs. Drain Current
VDS
LD
+
VDD -
VGS
Pulse Width < 1µs
Duty Factor < 0.1%
D.U.T
Fig 14a. Switching Time Test Circuit
VDS
90%
IAS
Fig 13b. Unclamped Inductive Waveforms
6
10%
VGS
td(on) tr
td(off) tf
Fig 14b. Switching Time Waveforms
www.irf.com

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