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Datasheet IRFR120Z PDF ( 特性, スペック, ピン接続図 )

部品番号 IRFR120Z
部品説明 AUTOMOTIVE MOSFET
メーカ International Rectifier
ロゴ International Rectifier ロゴ 
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IRFR120Z Datasheet, IRFR120Z PDF,ピン配置, 機能
AUTOMOTIVE MOSFET
Features
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
G
PD - 94754
IRFR120Z
IRFU120Z
HEXFET® Power MOSFET
D
VDSS = 100V
RDS(on) = 190m
ID = 8.7A
S
Description
Specifically designed for Automotive applications, this HEXFET®
Power MOSFET utilizes the latest processing techniques to
achieve extremely low on-resistance per silicon area. Additional
features of this design are a 175°C junction operating tempera-
ture, fast switching speed and improved repetitive avalanche
rating . These features combine to make this design an extremely
efficient and reliable device for use in Automotive applications and
a wide variety of other applications.
D-Pak
IRFR120Z
I-Pak
IRFU120Z
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited)
™ID @ TC = 100°C Continuous Drain Current, VGS @ 10V
IDM Pulsed Drain Current
PD @TC = 25°C Power Dissipation
Linear Derating Factor
VGS Gate-to-Source Voltage
dEAS (Thermally limited) Single Pulse Avalanche Energy
hEAS (Tested ) Single Pulse Avalanche Energy Tested Value
ÙIAR Avalanche Current
gEAR Repetitive Avalanche Energy
TJ
TSTG
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
Thermal Resistance
Parameter
RθJC
Junction-to-Case
iRθJA Junction-to-Ambient (PCB mount)
RθJA Junction-to-Ambient
HEXFET® is a registered trademark of International Rectifier.
www.irf.com
Max.
8.7
6.1
35
35
0.23
± 20
18
20
See Fig.12a, 12b, 15, 16
-55 to + 175
300 (1.6mm from case )
y y10 lbf in (1.1N m)
Typ.
–––
–––
–––
Max.
4.28
40
110
Units
A
W
W/°C
V
mJ
A
mJ
°C
Units
°C/W
1
10/3/03

1 Page



IRFR120Z pdf, ピン配列
IRFR/U120Z
100 VGS
TOP
15V
10V
8.0V
10
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
1
0.1
0.01
00.1
4.5V
60µs PULSE WIDTH
Tj = 25°C
1 100
VDS, Drain-to-Source Voltage (V)
11000
Fig 1. Typical Output Characteristics
100 VGS
TOP
15V
10V
8.0V
7.0V
6.0V
10 5.5V
5.0V
BOTTOM 4.5V
1
4.5V
0.1
00.1
60µs PULSE WIDTH
Tj = 175°C
1 100
VDS, Drain-to-Source Voltage (V)
11000
Fig 2. Typical Output Characteristics
100.0
10.0 TJ = 175°C
1.0 TJ = 25°C
0.1
4.0
VDS = 25V
60µs PULSE WIDTH
5.0 6.0 7.0
VGS, Gate-to-Source Voltage (V)
8.0
Fig 3. Typical Transfer Characteristics
www.irf.com
12
10 TJ = 175°C
8
6 TJ = 25°C
4
2 VDS = 10V
380µs PULSE WIDTH
0
02468
ID, Drain-to-Source Current (A)
Fig 4. Typical Forward Transconductance
Vs. Drain Current
3


3Pages


IRFR120Z 電子部品, 半導体
IRFR/U120Z
15V
VDS
L
DRIVER
RG
2V0GVS
tp
D.U.T
IAS
0.01
+
- VDD
A
Fig 12a. Unclamped Inductive Test Circuit
V(BR)DSS
tp
IAS
Fig 12b. Unclamped Inductive Waveforms
QG
10 V
QGS
QGD
VG
Charge
Fig 13a. Basic Gate Charge Waveform
Current Regulator
Same Type as D.U.T.
50K
12V .2µF
.3µF
D.U.T.
+
-VDS
VGS
3mA
IG ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
6
80
ID
TOP 0.9A
1.2
60 BOTTOM 5.2A
40
20
0
25
50 75 100 125 150
Starting TJ, Junction Temperature (°C)
175
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
5.0
4.0
ID = 250µA
3.0
2.0
-75 -50 -25 0 25 50 75 100 125 150 175 200
TJ , Temperature ( °C )
Fig 14. Threshold Voltage Vs. Temperature
www.irf.com

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