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Datasheet IRL3502S PDF ( 特性, スペック, ピン接続図 )

部品番号 IRL3502S
部品説明 HEXFET Power MOSFET
メーカ International Rectifier
ロゴ International Rectifier ロゴ 
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IRL3502S Datasheet, IRL3502S PDF,ピン配置, 機能
PRELIMINARY
l Advanced Process Technology
l Surface Mount
l Optimized for 4.5V-7.0V Gate Drive
l Ideal for CPU Core DC-DC Converters
l Fast Switching
G
Description
These HEXFET Power MOSFETs were designed
specifically to meet the demands of CPU core DC-DC
converters in the PC environment. Advanced
processing techniques combined with an optimized
gate oxide design results in a die sized specifically to
offer maximum efficiency at minimum cost.
The D2Pak is a surface mount power package capable
of accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible on-
resistance in any existing surface mount package. The
D2Pak is suitable for high current applications because
of its low internal connection resistance and can
dissipate up to 2.0W in a typical surface mount
application.
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
VGSM
EAS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 4.5V…
Continuous Drain Current, VGS @ 4.5V…
Pulsed Drain Current …
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Gate-to-Source Voltage
(Start Up Transient, tp = 100µs)
Single Pulse Avalanche Energy‚…
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt ƒ…
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Thermal Resistance
RqJC
RqJA
Parameter
Junction-to-Case
Junction-to-Ambient ( PCB Mounted,steady-state)**
PD -9.1676A
IRL3502S
HEXFET® Power MOSFET
D
VDSS = 20V
RDS(on) = 0.007W
ID = 110A†
S
D 2Pak
Max.
110†
67
420
140
1.1
± 10
14
390
64
14
5.0
-55 to + 150
300 (1.6mm from case )
Typ.
–––
–––
Max.
0.89
40
Units
A
W
W/°C
V
V
mJ
A
mJ
V/ns
°C
Units
°C/W
11/18/97

1 Page



IRL3502S pdf, ピン配列
`
IRL3502S
1000
VGS
TOP 7.00V
5.00V
4.50V
3.50V
3.00V
2.70V
2.50V
BOTTOM 2.25V
100
2.25V
10
0.1
20µs PULSE WIDTH
TJ = 25 °C
1 10
VDS , Drain-to-Source Voltage (V)
100
Fig 1. Typical Output Characteristics
1000
VGS
TOP 7.00V
5.00V
4.50V
3.50V
3.00V
2.70V
2.50V
BOTTOM 2.25V
100
2.25V
10
0.1
20µs PULSE WIDTH
TJ = 150 °C
1 10
VDS , Drain-to-Source Voltage (V)
100
Fig 2. Typical Output Characteristics
1000
100
TJ = 25 ° C
TJ = 150° C
V DS = 15V
20µs PULSE WIDTH
10
23456
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
2.0 ID = 110A
1.5
1.0
0.5
VGS = 4.5V
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Junction Temperature( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature


3Pages


IRL3502S 電子部品, 半導体
IRL3502S
0.014
0.010
0.012
0.010
0.008
0.006
VGS = 4.5V
VGS = 7.0V
0.008
0.006
I D = 64A
0.004
0
100 200 300
I D , D rain C urrent (A)
A
400
0.004
A
2.0 3.0 4.0 5.0 6.0 7.0 8.0
V G S , Gate-to-Source Voltage (V )
Fig 12. On-Resistance Vs. Drain Current Fig 13. On-Resistance Vs. Gate Voltage

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