DataSheet.jp

IRF6100 データシート PDF ( 特性, スペック, ピン接続図 )

部品番号 IRF6100
部品説明 HEXFET Power MOSFET
メーカ International Rectifier
ロゴ International Rectifier ロゴ 

Total 8 pages
		

No Preview Available !

IRF6100 Datasheet, IRF6100 PDF,ピン配置, 機能
l Ultra Low RDS(on) per Footprint Area
l Low Thermal Resistance
l P-Channel MOSFET
l One-third Footprint of SOT-23
l Super Low Profile (<.8mm)
l Available Tested on Tape & Reel
VDSS
-20V
PD - 93930F
IRF6100
HEXFET® Power MOSFET
RDS(on) max
0.065@VGS = -4.5V
0.095@VGS = -2.5V
ID
-5.1A
-4.1A
Description
True chip-scale packaging is available from International
Rectifier. Through the use of advanced processing tech-
niques, and a unique packaging concept, extremely low
on-resistance and the highest power densities in the
industry have been made available for battery and load
management applications. These benefits, combined with
the ruggedized device design , that International Rectifier
is well known for, provides the designer with an ex-
tremely efficient and reliable device.
G
The FlipFETpackage, is one-third the footprint of a
comparable SOT-23 package and has a profile of less
than .8mm. Combined with the low thermal resistance of
the die level device, this makes the FlipFETthe best
device for application where printed circuit board space is
at a premium and in extremely thin application environ-
ments such as battery packs, cell phones and PCMCIA
cards.
Absolute Maximum Ratings
VDS
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
VGS
TJ, TSTG
Parameter
Drain- Source Voltage
Continuous Drain Current, VGS @ 4.5V
Continuous Drain Current, VGS @ 4.5V
Pulsed Drain Current 
Power Dissipationƒ
Power Dissipationƒ
Linear Derating Factor
Gate-to-Source Voltage
Junction and Storage Temperature Range
D
S FlipFET™ ISOMETRIC
Max.
-20
±5.1
±3.5
±35
2.2
1.4
17
± 12
-55 to + 150
Units
V
A
W
mW/°C
V
°C
Thermal Resistance
Symbol
RθJA
RθJ-PCB
www.irf.com
Parameter
Junction-to-Ambientƒ
Junction-to-PCB mounted
Typ.
35
Max.
56.5
–––
Units
°C/W
1
07/13/06

1 Page





ページ 合計 : 8 ページ
PDF
ダウンロード
[ IRF6100.PDF ]

共有リンク

Link :

おすすめデータシート

部品番号部品説明メーカ
IRF610

There is a function of N-Channel Mosfet Transistor.

Inchange Semiconductor
Inchange Semiconductor
IRF610

There is a function of 3.3A/ 200V/ 1.500 Ohm/ N-Channel Power MOSFET.

Intersil Corporation
Intersil Corporation
IRF610

There is a function of N-Channel Power MOSFETs/ 3.5A/ 150-200V.

Fairchild Semiconductor
Fairchild Semiconductor
IRF610

There is a function of Trans MOSFET N-CH 200V 3.3A 3-Pin(3+Tab) TO-220AB.

New Jersey Semiconductor
New Jersey Semiconductor

多くを見つけるデータシート

部品番号部品説明メーカ
82S129

The 82S126 and 82S129 are field programmable, which means that custom patterns are immediately available by following the Signetics Generic fusing procedure. 1K-bit TTL Bipolar PROM, Address access time : 50ns max.

NXP
NXP
D1695

This part is a darlington connection NPN silicon epitaxial transistor. The 2SD1695 is a Darlington connection transistor and incorporates a dumper diode between the collector and emitter and a constant voltage diode and protection elements between the collector and base. This transistor is ideal for drives in solenoid and actuators.

NEC
NEC

www.DataSheet.jp    |   2018   |  メール    |   最新    |   Sitemap