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Datasheet IRL530NL PDF ( 特性, スペック, ピン接続図 )

部品番号 IRL530NL
部品説明 HEXFET Power MOSFET
メーカ International Rectifier
ロゴ International Rectifier ロゴ 
プレビュー
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IRL530NL Datasheet, IRL530NL PDF,ピン配置, 機能
l Advanced Process Technology
l Surface Mount (IRL530NS)
l Low-profile through-hole (IRL530NL)
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
G11
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power MOSFETs
are well known for, provides the designer with an extremely
efficient and reliable device for use in a wide variety of
applications.
The D2Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible on-
resistance in any existing surface mount package. The
D2Pak is suitable for high current applications because of
its low internal connection resistance and can dissipate
up to 2.0W in a typical surface mount application.
The through-hole version (IRL530NL) is available for low-
profile applications.
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C
ID @ TC = 100°C
IDM
Continuous Drain Current, VGS @ 10V…
Continuous Drain Current, VGS @ 10V…
Pulsed Drain Current …
PD @TA = 25°C Power Dissipation
PD @TC = 25°C Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy‚…
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt ƒ…
TJ
TSTG
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Thermal Resistance
RθJC
RθJA
Parameter
Junction-to-Case
Junction-to-Ambient ( PCB Mounted,steady-state)**
PD - 91349C
IRL530NS/L
HEXFET® Power MOSFET
D
VDSS =100V
RDS(on) = 0.10
S ID = 17A
D 2 Pak
T O -26 2
Max.
17
12
60
3.8
79
0.53
± 20
150
9.0
7.9
5.0
-55 to + 175
300 (1.6mm from case )
Typ.
–––
–––
Max.
1.9
40
Units
A
W
W
W/°C
V
mJ
A
mJ
V/ns
°C
Units
°C/W
1/09/04

1 Page



IRL530NL pdf, ピン配列
IRL530NS/L
100 VGS
TOP 15V
12V
10V
8.0V
6.0V
4.0V
3.0V
BOTTOM 2.5V
10
100 VGS
TOP 15V
12V
10V
8.0V
6.0V
4.0V
3.0V
BOTTOM 2.5V
10
1
0.1
0.1
2.5V
20µs PULSE W IDTH
TJ = 25°C
A
1 10 100
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
2.5V
1
0.1
0.1
20µs PULSE W IDTH
T J = 175°C
A
1 10 100
VDS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
100
TJ = 25°C
TJ = 175°C
10
1
V DS= 50V
20µs PU LSE W ID TH
0.1 A
2 3 4 5 6 7 8 9 10
VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
3.0
ID = 15A
2.5
2.0
1.5
1.0
0.5
0.0
VGS = 10V
A
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
TJ , Junction Tem perature (°C)
Fig 4. Normalized On-Resistance
Vs. Temperature


3Pages


IRL530NL 電子部品, 半導体
IRL530NS/L
VDS
RG
5.0 V
tp
L
D.U.T.
IAS
0.01
+
- VDD
Fig 12a. Unclamped Inductive Test Circuit
V(BR)DSS
tp
VDD
VDS
IAS
Fig 12b. Unclamped Inductive Waveforms
5.0 V
QGS
VG
QG
QGD
Charge
Fig 13a. Basic Gate Charge Waveform
350
ID
TO P
3.7A
300 6.4A
BOTTOM 9.0A
250
200
150
100
50
0 VDD = 25V
25 50
75
A
100 125 150 175
Starting TJ , Junction Tem perature (°C)
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
Current Regulator
Same Type as D.U.T.
50K
12V .2µF
.3µF
+
D.U.T. -VDS
VGS
3mA
IG ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit

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