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IXTH02N250 データシート PDF ( 特性, スペック, ピン接続図 )

部品番号 IXTH02N250
部品説明 High Voltage Power MOSFETs
メーカ IXYS
ロゴ IXYS ロゴ 

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IXTH02N250 Datasheet, IXTH02N250 PDF,ピン配置, 機能
High Voltage
Power MOSFETs
N-Channel Enhancement Mode
Fast Intrinsic Diode
IXTA02N250
IXTH02N250
IXTV02N250S
VDSS =
ID25 =
RDS(on)
2500V
200mA
450Ω
TO-263 (IXTA)
Symbol
VDSS
VDGR
VGSS
VGSM
ID25
IDM
PD
TJ
TJM
Tstg
TL
TSOLD
Md
FC
Weight
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C, RGS = 1MΩ
Continuous
Transient
TC = 25°C
TC = 25°C, Pulse Width Limited by TJM
TC = 25°C
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10s
Mounting Torque (TO-247)
Mounting Force (PLUS220 & TO-263)
TO-263
PLUS220
TO-247
Maximum Ratings
2500
2500
V
V
±20 V
±30 V
200 mA
600 mA
83 W
- 55 ... +150
150
- 55 ... +150
°C
°C
°C
300
260
1.13 / 10
11..65 / 25..14.6
°C
°C
Nm/lb.in
N/lb.
2.5 g
4.0 g
6.0 g
G
S
D (Tab)
TO-247 (IXTH)
G
DS
D (Tab)
PLUS220SMD (IXTV_S)
G
S
D (Tab)
G = Gate
S = Source
D = Drain
Tab = Drain
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
BVDSS
VGS = 0V, ID = 250μA
VGS(th)
VDS = VGS, ID = 250μA
IGSS VGS = ±20V, VDS = 0V
IDSS VDS = 0.8 • VDSS
TJ = 125°C
RDS(on)
VGS = 10V, ID = 50mA, Note 1
Characteristic Values
Min. Typ. Max.
2500
V
2.5 4.5 V
±100 nA
5 μA
500 μA
450 Ω
Features
z Fast Intrinsic Diode
z Low Package Inductance
Advantages
z Easy to Mount
z Space Savings
Applications
z High Voltage Power Supplies
z Capacitor Discharge
z Pulse Circuits
© 2012 IXYS CORPORATION, All Rights Reserved
DS100187C(04/12)

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