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Datasheet IXTH02N250 PDF ( 特性, スペック, ピン接続図 )

部品番号 IXTH02N250
部品説明 High Voltage Power MOSFETs
メーカ IXYS
ロゴ IXYS ロゴ 
プレビュー
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IXTH02N250 Datasheet, IXTH02N250 PDF,ピン配置, 機能
High Voltage
Power MOSFETs
N-Channel Enhancement Mode
Fast Intrinsic Diode
IXTA02N250
IXTH02N250
IXTV02N250S
VDSS =
ID25 =
RDS(on)
2500V
200mA
450Ω
TO-263 (IXTA)
Symbol
VDSS
VDGR
VGSS
VGSM
ID25
IDM
PD
TJ
TJM
Tstg
TL
TSOLD
Md
FC
Weight
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C, RGS = 1MΩ
Continuous
Transient
TC = 25°C
TC = 25°C, Pulse Width Limited by TJM
TC = 25°C
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10s
Mounting Torque (TO-247)
Mounting Force (PLUS220 & TO-263)
TO-263
PLUS220
TO-247
Maximum Ratings
2500
2500
V
V
±20 V
±30 V
200 mA
600 mA
83 W
- 55 ... +150
150
- 55 ... +150
°C
°C
°C
300
260
1.13 / 10
11..65 / 25..14.6
°C
°C
Nm/lb.in
N/lb.
2.5 g
4.0 g
6.0 g
G
S
D (Tab)
TO-247 (IXTH)
G
DS
D (Tab)
PLUS220SMD (IXTV_S)
G
S
D (Tab)
G = Gate
S = Source
D = Drain
Tab = Drain
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
BVDSS
VGS = 0V, ID = 250μA
VGS(th)
VDS = VGS, ID = 250μA
IGSS VGS = ±20V, VDS = 0V
IDSS VDS = 0.8 • VDSS
TJ = 125°C
RDS(on)
VGS = 10V, ID = 50mA, Note 1
Characteristic Values
Min. Typ. Max.
2500
V
2.5 4.5 V
±100 nA
5 μA
500 μA
450 Ω
Features
z Fast Intrinsic Diode
z Low Package Inductance
Advantages
z Easy to Mount
z Space Savings
Applications
z High Voltage Power Supplies
z Capacitor Discharge
z Pulse Circuits
© 2012 IXYS CORPORATION, All Rights Reserved
DS100187C(04/12)

1 Page



IXTH02N250 pdf, ピン配列
IXTA02N250 IXTH02N250
IXTV02N250S
Fig. 1. Output Characteristics @ TJ = 25ºC
200
VGS = 10V
7V
150 6V
100
5V
50
4V
0
0 10 20 30 40 50 60 70 80 90 100
VDS - Volts
Fig. 3. Output Characteristics @ TJ = 125ºC
200
VGS = 10V
7V
150 6V
100 5V
50
4V
0
0 20 40 60 80 100 120 140 160 180 200
VDS - Volts
Fig. 5. RDS(on) Normalized to ID = 100mA Value vs.
Drain Current
3.4
VGS = 10V
3.0
2.6 TJ = 125ºC
2.2
1.8
TJ = 25ºC
1.4
1.0
0.6
0
50 100 150 200 250 300 350 400
ID - MilliAmperes
Fig. 2. Extended Output Characteristics @ TJ = 25ºC
400 VGS = 10V
8V
350
300 7V
250
200
6V
150
100
50
0
0
5V
4V
50 100 150 200 250 300 350 400
VDS - Volts
Fig. 4. RDS(on) Normalized to ID = 100mA Value vs.
Junction Temperature
3.0
VGS = 10V
2.6
2.2 I D = 200mA
1.8
I D = 100mA
1.4
1.0
0.6
0.2
-50
-25
0 25 50 75 100 125 150
TJ - Degrees Centigrade
Fig. 6. Maximum Drain Current vs.
Case Temperature
200
160
120
80
40
0
-50
-25
0 25 50 75 100 125 150
TC - Degrees Centigrade
© 2012 IXYS CORPORATION, All Rights Reserved


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