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Datasheet AON6702L PDF ( 特性, スペック, ピン接続図 )

部品番号 AON6702L
部品説明 30V N-Channel MOSFET
メーカ Alpha & Omega Semiconductors
ロゴ Alpha & Omega Semiconductors ロゴ 
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AON6702L Datasheet, AON6702L PDF,ピン配置, 機能
AON6702L
30V N-Channel MOSFET
SRFET TM
General Description
Product Summary
SRFETTM AON6702L uses advanced trench technology
with a monolithically integrated Schottky diode to provide
excellent RDS(ON),and low gate charge. This device is
suitable for use as a low side FET in SMPS, load
switching and general purpose applications.
VDS
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
RDS(ON) (at VGS = 4.5V)
30V
85A
< 2m
< 3m
100% UIS Tested
100% Rg Tested
Top View
D
DFN5X6
18
27
36
45
G
SRFETTM
Soft Recovery MOSFET:
Integrated Schottky Diode
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain TC=25°C
Current G
TC=100°C
Pulsed Drain Current C
ID
IDM
Continuous Drain TA=25°C
Current
TA=70°C
Avalanche Current C
Repetitive avalanche energy L=0.1mH C
IDSM
IAR
EAR
TC=25°C
Power Dissipation B TC=100°C
PD
TA=25°C
Power Dissipation A TA=70°C
PDSM
Junction and Storage Temperature Range
TJ, TSTG
Maximum
30
±20
85
67
260
26
20
72
259
83
33
2.3
1.4
-55 to 150
Units
V
V
A
A
A
mJ
W
W
°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
t ≤ 10s
Steady-State
Steady-State
Symbol
RθJA
RθJC
Typ
14
40
1
Max
Units
18 °C/W
55 °C/W
1.5 °C/W
Rev 1: July 2009
www.aosmd.com
This datasheet has been downloaded from http://www.digchip.com at this page
Page 1 of 7

1 Page



AON6702L pdf, ピン配列
AON6702L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
200
10V
180
4V
160
140 4.5V 3.5V
120
100
80
60
40 VGS=3V
20
0
01234
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
5
200
180 VDS=5V
160
140
120
100
80
60 125°C
40
25°C
20
0
012345
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
6
3.0 1.8
2.5 VGS=4.5V
2.0
VGS=10V
1.5
1.6 VGS=10V
ID=20A
1.4 17
5
1.2 2
VGS=4.5V
10
1 ID=20A
1.0
0 5 10 15 20 25 30
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
0.8
0 25 50 75 100 125 150 175
Temperature (°C)
0
Figure 4: On-Resistance vs. Junction Tem1p8erature
(Note E)
6
ID=20A
5
4
125°C
3
2
25°C
1
2 4 6 8 10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
1.0E+02
1.0E+4001
1.0E+00
1.0E-01
125°C
25°C
1.0E-02
0.0 0.2 0.4 0.6 0.8 1.0
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
Rev 1: July 2009
www.aosmd.com
Page 3 of 7


3Pages


AON6702L 電子部品, 半導体
AON6702L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1.0E-01
1.0E-02
1.0E-03
VDS=30V
1.0E-04
1.0E-05
VDS=15V
1.0E-06
0 25 50 75 100 125 150 175
Temperature (°C)
Figure 17: Diode Reverse Leakage Current vs.
Junction Temperature
60
di/dt=800A/µs
50
Qrr
40
125ºC
25ºC
25ºC
8
7
6
30 Irm
125ºC
5
20
0
4
5 10 15 20 25 30
IS (A)
Figure 18: Diode Reverse Recovery Charge and Peak
Current vs. Conduction Current
55
50
45
40
35
30
25
20
15
10
5
0
0
Is=20A
Qrr
Irm
200
125ºC
25ºC
25ºC
125ºC
400 600
10
8
6
4
2
0
800 1000
di/dt (A/µs)
Figure 20: Diode Reverse Recovery Charge and
Peak Current vs. di/dt
0.7
0.6 20A
10A
0.5
0.4 5A
0.3 IS=1A
0.2
0 25 50 75 100 125 150 175
Temperature (°C)
Figure 18: Diode Forward voltage vs. Junction
Temperature
20
di/dt=800A/µs
16
trr
12
8
S
4
125ºC
25ºC
25ºC
125ºC
3
2.5
2
1.5
1
0.5
00
0 5 10 15 20 25 30
IS (A)
Figure 19: Diode Reverse Recovery Time and
Softness Factor vs. Conduction Current
25
trr
20
125ºC
Is=20A
2.5
2
15
10
S
5
25ºC
25ºC
125º
1.5
1
0.5
00
0 200 400 600 800 1000
di/dt (A/µs)
Figure 21: Diode Reverse Recovery Time and
Softness Factor vs. di/dt
Rev 1: July 2009
www.aosmd.com
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