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RP1E090XNのメーカーはROHM Semiconductorです、この部品の機能は「4V Drive Nch MOSFET」です。 |
部品番号 | RP1E090XN |
| |
部品説明 | 4V Drive Nch MOSFET | ||
メーカ | ROHM Semiconductor | ||
ロゴ | |||
このページの下部にプレビューとRP1E090XNダウンロード(pdfファイル)リンクがあります。 Total 7 pages
Data Sheet
4V Drive Nch MOSFET
RP1E090XN
Structure
Silicon N-channel MOSFET
Features
1) Low on-resistance.
2) Built-in G-S Protection Diode.
3) Small Surface Mount Package (MPT6).
Dimensions (Unit : mm)
MPT6
(Single)
(6) (5) (4)
(1) (2) (3)
Application
Switching
Packaging specifications
Package
Type Code
Basic ordering unit (pieces)
RP1E090XN
Taping
TR
1000
Absolute maximum ratings (Ta = 25C)
Parameter
Symbol
Limits
Drain-source voltage
Gate-source voltage
Drain current
Continuous
Pulsed
Source current
(Body Diode)
Continuous
Pulsed
Power dissipation
Channel temperature
Range of storage temperature
VDSS
30
VGSS
20
ID 9
IDP *1
36
IS 1.6
ISP *1
36
PD *2
2.0
Tch 150
Tstg 55 to 150
*1 Pw10s, Duty cycle1%
*2 Mounted on a ceramic board.
Unit
V
V
A
A
A
A
W
C
C
Inner circuit
(6) (5) (4)
(1) Source
(2) Source
(3) Gate
(4) Drain
(5) Drain
(6) Drain
∗2
∗1
(1) (2) (3)
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
Thermal resistance
Parameter
Channel to Ambient
*Mounted on a ceramic board.
Symbol
Limits
Rth (ch-a)* 62.5
Unit
C / W
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© 2011 ROHM Co., Ltd. All rights reserved.
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2011.02 - Rev.A
1 Page RP1E090XN
Electrical characteristic curves (Ta=25C)
Fig.1 Typical Output Characteristics(Ⅰ)
9
Ta=25°C
8 Pulsed
VGS= 2.8V
7
6
VGS= 10V
5 VGS= 4.5V
VGS= 4.0V
4
3 VGS= 2.5V
2
1
0
0 0.2 0.4 0.6 0.8 1
DRAIN-SOURCE VOLTAGE : VDS[V]
Fig.3 Typical Transfer Characteristics
10
VDS= 10V
Pulsed
1 Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
0.1
0.01
0.001
0
12
GATE-SOURCE VOLTAGE : VGS[V]
3
1000
Fig.5 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅱ)
VGS= 10V
Pulsed
Ta=125°C
Ta=75°C
100 Ta=25°C
Ta=-25°C
10
1
0.1
1
DRAIN-CURRENT : ID[A]
10
Data Sheet
Fig.2 Typical Output Characteristics(Ⅱ)
9
8 VGS= 2.8V
7
Ta=25°C
Pulsed
6
VGS= 10V
5 VGS= 4.5V
VGS= 4.0V
4
3
2
1 VGS= 2.5V
0
0 2 4 6 8 10
DRAIN-SOURCE VOLTAGE : VDS[V]
1000
Fig.4 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅰ)
Ta=25°C
Pulsed
100
10
1
0.1
VGS= 4.0V
VGS= 4.5V
VGS= 10V
1
DRAIN-CURRENT : ID[A]
10
1000
100
Fig.6 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅲ)
VGS= 4.5V
Pulsed
Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
10
1
0.1
1
DRAIN-CURRENT : ID[A]
10
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© 2011 ROHM Co., Ltd. All rights reserved.
3/6
2011.02 - Rev.A
3Pages RP1E090XN
Measurement circuits
VGS
RG
ID
RL
VDS
D.U.T.
VDD
Fig.1-1 Switching Time Measurement Circuit
VGS
IG(Const.)
ID
RL
VDS
D.U.T.
VDD
Fig.2-1 Gate Charge Measurement Circuit
Pulse width
50%
VGS 10%
VDS
10%
90% 50%
10%
td(on)
90%
tr
ton
td(off)
90%
tf
toff
Fig.1-2 Switching Waveforms
VG
VGS
Qgs
Qg
Qgd
Charge
Fig.2-2 Gate Charge Waveform
Data Sheet
Notice
This product might cause chip aging and breakdown under the large electrified environment. Please consider to design
ESD protection circuit.
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© 2011 ROHM Co., Ltd. All rights reserved.
6/6
2011.02 - Rev.A
6 Page | |||
ページ | 合計 : 7 ページ | ||
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部品番号 | 部品説明 | メーカ |
RP1E090XN | 4V Drive Nch MOSFET | ROHM Semiconductor |