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CPC3730 データシート PDF ( 特性, スペック, ピン接続図 )

部品番号 CPC3730
部品説明 350V N-Channel Depletion-Mode FET
メーカ IXYS
ロゴ IXYS ロゴ 

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CPC3730 Datasheet, CPC3730 PDF,ピン配置, 機能
INTEGRATED CIRCUITS DIVISION
V(BR)DSX /
V(BR)DGX
350VP
RDS(on)
(max)
30
IDSS (min)
140mA
Features
Low RDS(on) at Cold Temperatures
RDS(on) 30max. at 25ºC
High Input Impedance
High Breakdown Voltage: 350VP
Low VGS(off) Voltage: -1.6 to -3.9V
Small Package Size: SOT-89
Applications
Ignition Modules
Normally-On Switches
Solid State Relays
Converters
Telecommunications
Power Supply
PRELIMINARY
CPC3730
350V N-Channel
Depletion-Mode FET
Package
SOT-89
Description
The CPC3730 is an N-channel, depletion mode, field
effect transistor (FET) that utilizes IXYS Integrated
Circuits Division’s proprietary third-generation vertical
DMOS process. The third-generation process realizes
world class, high voltage MOSFET performance
in an economical silicon gate process. Our vertical
DMOS process yields a robust device, with high input
impedance, for use in high power applications. The
CPC3730 is a highly reliable FET device that has
been used extensively in our solid state relays for
industrial and telecommunications applications.
This device excels in power applications requiring
low drain-source resistance, particularly in cold
environments such as automotive ignition modules.
The CPC3730 offers a low, 30maximum, on-state
resistance at 25ºC.
The CPC3730 has a minimum breakdown voltage
of 350VP , and is available in an SOT-89 package.
As with all MOS devices, the FET structure prevents
thermal runaway and thermal-induced secondary
breakdown.
Ordering Information
Part #
CPC3730CTR
Description
N-Channel Depletion Mode FET, SOT-89 Pkg.
Tape and Reel (1000/Reel)
Package Pinout
G
D
S
D
(SOT-89)
Circuit Symbol
G
D
S
DS-CPC3730-R00K
PRELIMINARY
1

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