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Datasheet CPC3720 PDF ( 特性, スペック, ピン接続図 )

部品番号 CPC3720
部品説明 350V N-Channel Depletion-Mode FET
メーカ IXYS
ロゴ IXYS ロゴ 
プレビュー
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CPC3720 Datasheet, CPC3720 PDF,ピン配置, 機能
INTEGRATED CIRCUITS DIVISION
PRELIMINARY
CPC3720
350V N-Channel
Depletion-Mode FET
V(BR)DSX /
V(BR)DGX
350VP
RDS(on)
(max)
22
IDSS (min)
130mA
Package
SOT-89
Features
Offers Low RDS(on) at Cold Temperatures
RDS(on) 22max. at 25ºC
High Input Impedance
High Breakdown Voltage: 350VP
Low VGS(off) Voltage: -1.6 to -3.9V
Small Package Size SOT-89
Applications
Ignition Modules
Normally-On Switches
Solid State Relays
Converters
Telecommunications
Power Supply
Description
The CPC3720 is an N-channel, depletion mode, field
effect transistor (FET) that utilizes IXYS Integrated
Circuits Division’s proprietary third-generation vertical
DMOS process. The third-generation process realizes
world class, high voltage MOSFET performance
in an economical silicon gate process. Our vertical
DMOS process yields a robust device, with high input
impedance, for use in high power applications. The
CPC3720 is a highly reliable FET device that has
been used extensively in our solid state relays for
industrial and telecommunications applications.
This device excels in power applications requiring
low drain-source resistance, particularly in cold
environments such as automotive ignition modules.
The CPC3720 offers a low, 22maximum, on-state
resistance at 25ºC.
The CPC3720 has a minimum breakdown voltage
of 350VP , and is available in an SOT-89 package.
As with all MOS devices, the FET structure prevents
thermal runaway and thermal-induced secondary
breakdown.
Ordering Information
Part #
CPC3720CTR
Description
N-Channel Depletion Mode FET, SOT-89 Pkg.
Tape and Reel (1000/Reel)
Package Pinout
G
D
S
D
(SOT-89)
Circuit Symbol
G
D
S
DS-CPC3720-R00J
PRELIMINARY
1

1 Page



CPC3720 pdf, ピン配列
INTEGRATED CIRCUITS DIVISION
200
180
160
140
120
100
80
60
40
20
0
0
Output Characteristics
(TA=25ºC)
VGS=0.0V
VGS=-1.0V
VGS=-1.5V
VGS=-2.0V
123456
VDS (V)
PRELIMINARY
PERFORMANCE DATA*
Transfer Characteristics
(VDS=5V)
175
150
125
100
75
+125ºC
50
+25ºC
-40ºC
25
0
-3.0
-2.5 -2.0 -1.5
VGS (V)
-1.0
0
-0.5
-1.0
-1.5
-2.0
-2.5
-3.0
-3.5
-40
CPC3720
VGS(off) vs. Temperature
(VDS=10V, ID=1mA)
0 40 80
Temperature (ºC)
120
35
30
25
20
15
10
5
0
-40
RON vs. Temperature
(VGS=0V, ID=90mA)
0 40 80
Temperature (ºC)
Power Dissipation
vs. Ambient Temperature
1.6
1.4
1.2
1.0
0.8
Transconductance vs. Drain Current
(VDS=10V)
300
-55ºC
250
+25ºC
200
+125ºC
150
0.6 100
0.4
50
0.2
0.0
120 0 20 40 60 80 100 120 140
Ambient Temperature (ºC)
0
0 10 20 30 40 50 60 70 80 90 100
ID (mA)
Max Rated Safe Operating Area
1
0.1
0.01
0.001
0.1
1 10 100
Drain-Source Voltage (V)
1000
Capacitance vs. Drain Source Voltage
(VGS=-5V)
160
140
120
100
80 CISS
60
40
20
CRSS
0
0
10
20
VDS (V)
COSS
30 40
On-Resistance vs. Drain Current
(VGS=0V)
30
27
24
21
18
15
12
9
6
3
0
0.00
0.04
0.08
0.12
0.16
0.2
ID (A)
*The Performance data shown in the graphs above is typical of device performance. For guaranteed parameters not indicated in the written specifications, please
contact our application department.
R00J PRELIMINARY
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