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AOI468 PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 AOI468
部品説明 11.5A N-Channel MOSFET
メーカ Alpha & Omega Semiconductors
ロゴ Alpha & Omega Semiconductors ロゴ 

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AOI468 Datasheet, AOI468 PDF,ピン配置, 機能
AOD468/AOI468
300V,11.5A N-Channel MOSFET
General Description
Product Summary
The AOD468 & AOI468 have been fabricated using an
advanced high voltage MOSFET process that is designed
to deliver high levels of performance and robustness in
popular AC-DC applications.By providing low RDS(on), Ciss
and Crss along with guaranteed avalanche capability these
parts can be adopted quickly into new and existing offline
power supply designs.These parts are ideal for boost
converters and synchronous rectifiers for consumer,
telecom, industrial power supplies and LED backlighting.
VDS
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
100% UIS Tested!
100% Rg Tested!
350V@150
11.5A
<0.42
Top View
TO252
DPAK
Bottom View
D
D
Top View
TO251A
IPAK
Bottom View
S
G
G
S
S
D
G
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TC=25°C
CurrentB
TC=100°C
Pulsed Drain Current C
Avalanche Current C
Repetitive avalanche energy C
Single pulsed avalanche energy H
ID
IDM
IAR
EAR
EAS
Peak diode recovery dv/dt
dv/dt
TC=25°C
Power Dissipation B Derate above 25oC
PD
Junction and Storage Temperature Range
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
TJ, TSTG
TL
G
D
S
Maximum
300
±30
11.5
8.3
29
3.8
216
430
5
150
1
-50 to 175
300
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A,G
Maximum Case-to-sink A
Maximum Junction-to-CaseD,F
Symbol
RθJA
RθCS
RθJC
Typical
45
-
0.7
Maximum
55
0.5
1
D
G
S
Units
V
V
A
A
mJ
mJ
V/ns
W
W/ oC
°C
°C
Units
°C/W
°C/W
°C/W
Rev0: Dec 2010
www.aosmd.com
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