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AOI468のメーカーはAlpha & Omega Semiconductorsです、この部品の機能は「11.5A N-Channel MOSFET」です。 |
部品番号 | AOI468 |
| |
部品説明 | 11.5A N-Channel MOSFET | ||
メーカ | Alpha & Omega Semiconductors | ||
ロゴ | |||
このページの下部にプレビューとAOI468ダウンロード(pdfファイル)リンクがあります。 Total 6 pages
AOD468/AOI468
300V,11.5A N-Channel MOSFET
General Description
Product Summary
The AOD468 & AOI468 have been fabricated using an
advanced high voltage MOSFET process that is designed
to deliver high levels of performance and robustness in
popular AC-DC applications.By providing low RDS(on), Ciss
and Crss along with guaranteed avalanche capability these
parts can be adopted quickly into new and existing offline
power supply designs.These parts are ideal for boost
converters and synchronous rectifiers for consumer,
telecom, industrial power supplies and LED backlighting.
VDS
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
100% UIS Tested!
100% Rg Tested!
350V@150℃
11.5A
<0.42Ω
Top View
TO252
DPAK
Bottom View
D
D
Top View
TO251A
IPAK
Bottom View
S
G
G
S
S
D
G
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TC=25°C
CurrentB
TC=100°C
Pulsed Drain Current C
Avalanche Current C
Repetitive avalanche energy C
Single pulsed avalanche energy H
ID
IDM
IAR
EAR
EAS
Peak diode recovery dv/dt
dv/dt
TC=25°C
Power Dissipation B Derate above 25oC
PD
Junction and Storage Temperature Range
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
TJ, TSTG
TL
G
D
S
Maximum
300
±30
11.5
8.3
29
3.8
216
430
5
150
1
-50 to 175
300
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A,G
Maximum Case-to-sink A
Maximum Junction-to-CaseD,F
Symbol
RθJA
RθCS
RθJC
Typical
45
-
0.7
Maximum
55
0.5
1
D
G
S
Units
V
V
A
A
mJ
mJ
V/ns
W
W/ oC
°C
°C
Units
°C/W
°C/W
°C/W
Rev0: Dec 2010
www.aosmd.com
Page 1 of 6
1 Page AOD468/AOI468
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
20
15
10
5
0
0
1.5
10V
6.5V
6V
VGS=5.5V
5 10 15 20 25
VDS (Volts)
Fig 1: On-Region Characteristics
30
100
VDS=40V
-55°C
10
125°C
1
25°C
0.1
2
468
VGS(Volts)
Figure 2: Transfer Characteristics
3
10
1.2
0.9 VGS=10V
0.6
0.3
0.0
0
5 10 15 20 25
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
1.2
ID=30A
1.1
1 125°C
0.9
25°C
0.8
-100 -50 0 50 100 150 200
TJ (oC)
Figure 5: Break Down vs. Junction Temperature
2.5 VGS=10V
ID=6A
2
1.5
1
0.5
0
-100 -50 0 50 100 150 200
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
1.0E+02
1.0E+01
40
1.0E+00
1.0E-01
125°C
25°C
1.0E-02
1.0E-03
1.0E-04
0.2 0.4 0.6 0.8
VSD (Volts)
Figure 6: Body-Diode Characteristics
1.0
Rev0: Dec 2010
www.aosmd.com
Page 3 of 6
3Pages AOD468/AOI468
+
VDC
-
Vgs
Ig
Vds
Vgs
Rg
Vgs
Gate Charge Test Circuit & Waveform
Vgs
+
VDC Vds
DUT -
10V
Qgs
Qg
Qgd
Res istive Switching Test Circuit & Waveforms
RL
Vds
DUT
+
VDC Vdd
-
Vgs
t d(on) t r
t on
t d(off)
tf
t off
Charge
90%
10%
Vds
Id
Vgs
Rg
Vgs
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
EAR= 1/2 LI
2
AR
Vds
+Vgs
VDC Vdd
- Id
DUT
Vgs
BVDSS
IAR
Vds +
Vds -
Isd
Vgs
Ig
Diode Recovery Tes t Circuit & Waveforms
Qrr = - Idt
DUT
Vgs
L
Isd
IF dI/dt
trr
+
VDC Vdd
IRM
- Vds
Vdd
Rev0: Dec 2010
www.aosmd.com
Page 6 of 6
6 Page | |||
ページ | 合計 : 6 ページ | ||
|
PDF ダウンロード | [ AOI468 データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
AOI468 | 11.5A N-Channel MOSFET | Alpha & Omega Semiconductors |