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Datasheet AON6542 PDF ( 特性, スペック, ピン接続図 )

部品番号 AON6542
部品説明 30V N-Channel AlphaMOS
メーカ Alpha & Omega Semiconductors
ロゴ Alpha & Omega Semiconductors ロゴ 
プレビュー
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AON6542 Datasheet, AON6542 PDF,ピン配置, 機能
AON6542
30V N-Channel AlphaMOS
General Description
• Latest Trench Power AlphaMOS (αMOS LV) technology
• Very Low RDS(on) at 4.5VGS
• Low Gate Charge
• High Current Capability
• RoHS and Halogen-Free Compliant
Product Summary
VDS
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
RDS(ON) (at VGS = 4.5V)
Application
• DC/DC Converters in Computing, Servers, and POL
• Isolated DC/DC Converters in Telecom and Industrial
100% UIS Tested
100% Rg Tested
30V
30A
< 5m
< 8.5m
Top View
DFN5X6
Bottom View
PIN1
Top View
18
27
36
45
G
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
CurrentG
TC=25°C
TC=100°C
ID
Pulsed Drain Current C
IDM
Continuous Drain
TA=25°C
Current
TA=70°C
Avalanche Current C
Avalanche energy L=0.05mH C
IDSM
IAS
EAS
VDS Spike
100ns
VSPIKE
TC=25°C
Power Dissipation B TC=100°C
PD
TA=25°C
Power Dissipation A TA=70°C
PDSM
Junction and Storage Temperature Range
TJ, TSTG
Maximum
30
±20
30
23
120
23
18
32
26
36
25
10
4.1
2.6
-55 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
t 10s
Steady-State
Steady-State
Symbol
RθJA
RθJC
Typ
24
53
3.5
Max
30
64
5
D
S
Units
V
V
A
A
A
mJ
V
W
W
°C
Units
°C/W
°C/W
°C/W
Rev 0: May 2012
www.aosmd.com
Page 1 of 6

1 Page



AON6542 pdf, ピン配列
AON6542
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
10V
80
60
4.5V
7V
5V
4V
100
80
60
VDS=5V
40
20 VGS=3.0V
0
01234
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
5
10
8 VGS=4.5V
6
4
VGS=10V
2
0
0 5 10 15 20 25 30
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
40
125°C
20
25°C
0
012345
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
6
1.8
1.6 VGS=10V
ID=20A
1.4
1.2
1
VGS=4.5V
ID=20A
0.8
0
25 50 75 100 125 150 175 200
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
15
ID=20A
10
125°C
5
25°C
0
2 4 6 8 10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
1.0E+02
1.0E+01
40
1.0E+00
1.0E-01
125°C
1.0E-02
1.0E-03
25°C
1.0E-04
1.0E-05
0.0 0.2 0.4 0.6 0.8 1.0 1.2
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
Rev 0: May 2012
www.aosmd.com
Page 3 of 6


3Pages


AON6542 電子部品, 半導体
AON6542
+
VDC
-
Vgs
Ig
Gate Charge Test Circuit & Waveform
+
Vds
VDC
DUT -
Vgs
10V
Qgs
Qg
Qgd
Vds
Vgs
Rg
Resistive Switching Test Circuit & Waveforms
RL
Vds
DUT
+
Vdd
VDC
-
Charge
90%
10%
Vgs
Vgs
td(on) tr
ton
td(off)
tf
toff
Vds
Id
Vgs
Rg
Vgs
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
2
E=
AR
1/2
LIAR
Vds
Vgs
+
Vdd
VDC
- Id
DUT
Vgs
B VD S S
I AR
Vds +
Vds -
Isd
Vgs
Ig
DUT
L
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vgs
+
Vdd
VDC
-
Isd
Vds
I F trr
dI/dt
I RM
Vdd
Rev 0: May 2012
www.aosmd.com
Page 6 of 6

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