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PDF RP1L080SN Data sheet ( Hoja de datos )
| Número de pieza | RP1L080SN | |
| Descripción | 4V Drive Nch MOSFET | |
| Fabricantes | ROHM Semiconductor | |
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Data Sheet
4V Drive Nch MOSFET
RP1L080SN
Structure
Silicon N-channel MOSFET
Features
1) Low on-resistance.
2) Fast switching speed.
3) Drive circuits can be simple.
4) Parallel use is easy.
Application
Switching
Dimensions (Unit : mm)
MPT6
(Single)
(6) (5) (4)
(1) (2) (3)
Packaging specifications
Package
Type Code
Basic ordering unit (pieces)
RP1L080SN
Taping
TR
1000
Absolute maximum ratings (Ta = 25°C)
Parameter
Symbol
Limits
Drain-source voltage
Gate-source voltage
Drain current
Continuous
Pulsed
Source current
(Body Diode)
Continuous
Pulsed
Power dissipation
Channel temperature
Range of storage temperature
VDSS
VGSS
ID
IDP *1
IS
ISP *1
PD *2
Tch
Tstg
60
20
8.0
32
1.6
32
2.0
150
55to150
*1 Pw≤10s, Duty cycle≤1%
*2 Mounted on a ceramic board
Unit
V
V
A
A
A
A
W
C
C
Inner circuit
(6) (5) (4)
(1) Source
(2) Source
(3) Gate
(4) Drain
(5) Drain
(6) Drain
∗2
∗1
(1) (2)
(3)
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
Thermal resistance
Parameter
Channel to Ambient
* Mounted on a ceramic board
Symbol
Rth (ch-a)*
Limits
62.5
Unit
C / W
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
1/6
2011.08 - Rev.A
1 page  
RP1L080SN
Data Sheet
100000
10000
Fig.13 Typical Capacitance vs. Drain-Source Voltage
Ta=25°C
f=1MHz
VGS=0V
1000
100
10
Ciss
Crss
Coss
1
0.01
0.1 1 10
Drain-Source Voltage : VDS [V]
100
Fig.15 Normalized Transient Thermal Resistance v.s. Pulse Width
10
Ta=25°C
Single Pulse
1
0.1
0.01
0.001
0.0001 0.001
Mounted on a ceramic board.
(30mm × 30mm × 0.8mm)
Rth(ch-a)=62.5°C/W
Rth(ch-a)(t)=r(t)×Rth(ch-a)
0.01 0.1 1 10
Pulse width : Pw (s)
100 1000
1000
Fig.14 Maximum Safe Operating Area
Operation in this area
100
is limited by RDS(on)
(VGS = 10V)
10
1
0.1 Ta=25°C
Single Pulse
Mounted on a ceramic board.
（30mm × 30mm × 0.8mm)
0.01
0.1 1 10
Drain-Source Voltage : VDS [ V ]
PW = 100μs
PW = 1ms
PW = 10ms
DC Operation
100
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
5/6
2011.08 - Rev.A
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