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SPP15N65C3のメーカーはInfineon Technologiesです、この部品の機能は「Power Transistor」です。 |
部品番号 | SPP15N65C3 |
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部品説明 | Power Transistor | ||
メーカ | Infineon Technologies | ||
ロゴ | |||
このページの下部にプレビューとSPP15N65C3ダウンロード(pdfファイル)リンクがあります。 Total 10 pages
CoolMOSTM Power Transistor
Features
• Low gate charge
• Extreme dv/dt rated
• High peak current capability
• Qualified according to JEDEC1) for target applications
• Pb-free lead plating; RoHS compliant
CoolMOS C3 designed for:
• Notebook Adapter
Product Summary
V DS
R DS(on),max
Q g,typ
SPP15N65C3
650 V
0.28 Ω
63 nC
PG-TO220-3-1
Type
SPP15N65C3
Package
PG-TO220-3
Marking
15N65C3
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Continuous drain current
Pulsed drain current3)
Avalanche energy, single pulse
Symbol Conditions
ID
I D,pulse
E AS
T C=25 °C
T C=100 °C
T C=25 °C
I D=3 A, V DD=50 V
Avalanche
energy,
repetitive
t
2),3)
AR
E AR
I D=5 A, V DD=50 V
Avalanche
current,
repetitive
t
3),4)
AR
I AR
MOSFET dv /dt ruggedness
Gate source voltage
Power dissipation
Operating and storage temperature
dv /dt
V GS
V DS=0...480 V
static
AC (f>1 Hz)
P tot T C=25 °C
T j, T stg
Rev. 2.0
page 1
Value
15
9.4
45
460
0.8
5.0
50
±20
±30
156
-55 ... 150
Unit
A
mJ
A
V/ns
V
W
°C
2007-12-13
1 Page Parameter
Symbol Conditions
Dynamic characteristics
Input capacitance
Output capacitance
C iss
C oss
Effective output capacitance, energy
related5)
C o(er)
Effective output capacitance, time
related6)
Turn-on delay time
Rise time
Turn-off delay time
Fall time
C o(tr)
t d(on)
tr
t d(off)
tf
V GS=0 V, V DS=25 V,
f =1 MHz
V GS=0 V, V DS=0 V
to 480 V
V DD=400 V,
V GS=10 V, I D=15 A,
R G=6.8 Ω
SPP15N65C3
min.
Values
typ.
Unit
max.
- 1600 - pF
- 540 -
- 67 -
- 120 -
- 32 - ns
- 14 -
- 70 -
- 11 -
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Reverse Diode
Diode forward voltage
Reverse recovery time
Reverse recovery charge
Peak reverse recovery current
Q gs - 9 - nC
Q gd V DD=480 V, I D=15 A,
-
29
-
Q g V GS=0 to 10 V
- 63
V plateau
- 5.4 - V
V SD
V GS=0 V, I F=15 A,
T j=25 °C
t rr
Q rr
V R=480 V, I F=I S,
di F/dt =100 A/µs
I rrm
- 1.0 1.2 V
- 420 - ns
- 8 - µC
- 32 - A
1) J-STD20 and JESD22
2) Limited only by maximum temperature.
3) Pulse width t p limited by T j,max
4) Repetitive avalanche causes additional power losses that can be calculated asP AV=E AR*f.
5) C o(er) is a fixed capacitance that gives the same stored energy as C oss while V DS is rising from 0 to 80% V DSS.
6) C o(tr) is a fixed capacitance that gives the same charging time as C oss while V DS is rising from 0 to 80% V DSS.
Rev. 2.0
page 3
2007-12-13
3Pages 9 Typ. gate charge
V GS=f(Q gate); I D= 15 A pulsed
parameter: V DD
10
9
120 V
8
7 480 V
6
5
4
3
2
1
0
0 20 40 60
Q gate [nC]
11 Avalanche energy
E AS=f(T j); I D=3 A; V DD=50 V
500
400
300
200
100
0
20
Rev. 2.0
60 100 140
T j [°C]
SPP15N65C3
10 Forward characteristics of reverse diode
I F=f(V SD)
parameter: T j
102
150 °C, 98%
25 °C
101
150 °C
25 °C, 98%
100
80 0 0.5 1 1.5
V SD [V]
12 Drain-source breakdown voltage
V BR(DSS)=f(T j); I D=0.25 mA
2
740
720
700
680
660
640
620
600
580
180
-50 -10 30
70 110 150
T j [°C]
page 6
2007-12-13
6 Page | |||
ページ | 合計 : 10 ページ | ||
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部品番号 | 部品説明 | メーカ |
SPP15N65C3 | Power Transistor | Infineon Technologies |