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MTP6N60E の電気的特性と機能

MTP6N60EのメーカーはON Semiconductorです、この部品の機能は「Power Field Effect Transistor」です。


製品の詳細 ( Datasheet PDF )

部品番号 MTP6N60E
部品説明 Power Field Effect Transistor
メーカ ON Semiconductor
ロゴ ON Semiconductor ロゴ 




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MTP6N60E Datasheet, MTP6N60E PDF,ピン配置, 機能
MTP6N60E
Power Field Effect
Transistor
NChannel EnhancementMode Silicon
Gate
This high voltage MOSFET uses an advanced termination scheme
to provide enhanced voltageblocking capability without degrading
performance over time. In addition, this advanced MOSFET is
designed to withstand high energy in the avalanche and commutation
modes. The new energy efficient design also offers a draintosource
diode with a fast recovery time. Designed for high voltage, high speed
switching applications in power supplies, converters and PWM motor
controls, these devices are particularly well suited for bridge circuits
where diode speed and commutating safe operating areas are critical
and offer additional safety margin against unexpected voltage
transients.
Robust High Voltage Termination
Avalanche Energy Specified
SourcetoDrain Diode Recovery Time Comparable to a Discrete
Fast Recovery Diode
Diode is Characterized for Use in Bridge Circuits
IDSS and VDS(on) Specified at Elevated Temperature
http://onsemi.com
TMOS POWER FET
6.0 AMPERES, 600 VOLTS
RDS(on) = 1.2 W
TO220AB
CASE 221A09
Style 5
D
G
S
© Semiconductor Components Industries, LLC, 2013
May, 2013 Rev. 7
1
Publication Order Number:
MTP6N60E/D

1 Page





MTP6N60E pdf, ピン配列
MTP6N60E
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
OFF CHARACTERISTICS
DraintoSource Breakdown Voltage
(VGS = 0 Vdc, ID = 0.25 μAdc)
Temperature Coefficient (Positive)
V(BR)DSS
600
689
Vdc
mV/°C
Zero Gate Voltage Drain Current
(VDS = 600 Vdc, VGS = 0 Vdc)
(VDS = 600 Vdc, VGS = 0 Vdc, TJ = 125°C)
GateBody Leakage Current (VGS = ± 20 Vdc, VDS = 0 Vdc)
ON CHARACTERISTICS (1)
Gate Threshold Voltage
(VDS = VGS, ID = 250 μAdc)
Temperature Coefficient (Negative)
IDSS
IGSS
VGS(th)
μAdc
− − 1.0
− − 50
− − 100 nAdc
2.0 3.0 4.0 Vdc
7.1 mV/°C
Static DraintoSource OnResistance (VGS = 10 Vdc, ID = 3.0 Adc)
DraintoSource OnVoltage
(VGS = 10 Vdc, ID = 6.0 Adc)
(VGS = 10 Vdc, ID = 3.0 Adc, TJ = 125°C)
Forward Transconductance (VDS = 15 Vdc, ID = 3.0 Adc)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
SWITCHING CHARACTERISTICS (2)
TurnOn Delay Time
Rise Time
TurnOff Delay Time
Fall Time
(VDS = 300 Vdc, ID = 6.0 Adc,
VGS = 10 Vdc,
RG = 9.1 Ω)
Gate Charge
(VDS = 300 Vdc, ID = 6.0 Adc,
VGS = 10 Vdc)
SOURCEDRAIN DIODE CHARACTERISTICS
Forward OnVoltage (1)
(IS = 6.0 Adc, VGS = 0 Vdc)
(IS = 6.0 Adc, VGS = 0 Vdc, TJ = 125°C)
RDS(on)
VDS(on)
gFS
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QT
Q1
Q2
Q3
VSD
0.94 1.2 Ohms
Vdc
6.0 8.6
− − 7.6
2.0 5.5
mhos
1498
2100
pF
158 220
29 60
14 30 ns
19 40
40 80
26 55
35.5 50 nC
8.1
14.1
15.8
Vdc
0.83 1.2
0.72
Reverse Recovery Time
(IS = 6.0 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/μs)
Reverse Recovery Stored Charge
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance
(Measured from contact screw on tab to center of die)
(Measured from the drain lead 0.25from package to center of die)
trr
ta
tb
QRR
LD
266
ns
166
100
2.5 μC
nH
3.5
4.5
Internal Source Inductance
(Measured from the source lead 0.25from package to source bond pad)
(1) Pulse Test: Pulse Width 300 μs, Duty Cycle 2%.
(2) Switching characteristics are independent of operating junction temperature.
LS
nH
7.5
http://onsemi.com
3


3Pages


MTP6N60E 電子部品, 半導体
MTP6N60E
12 300
QT
10
8
6 Q1
VGS 200
Q2
4 ID = 6 A 100
2 TJ = 25°C
Q3 VDS
00
0 6 12 18 24 30 36
QT, TOTAL CHARGE (nC)
Figure 8. GateToSource and DrainToSource
Voltage versus Total Charge
1000
VDD = 300 V
ID = 6 A
VGS = 10 V
TJ = 25°C
100
td(off)
tf
10
tr
td(on)
1
1 10 100
RG, GATE RESISTANCE (OHMS)
Figure 9. Resistive Switching Time
Variation versus Gate Resistance
DRAINTOSOURCE DIODE CHARACTERISTICS
6
VGS = 0 V
5 TJ = 25°C
4
3
2
1
0
0.50 0.55 0.60 0.65 0.70 0.75 0.80 0.85
VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
Figure 10. Diode Forward Voltage versus Current
SAFE OPERATING AREA
The Forward Biased Safe Operating Area curves define
the maximum simultaneous draintosource voltage and
drain current that a transistor can handle safely when it is
forward biased. Curves are based upon maximum peak
junction temperature and a case temperature (TC) of 25°C.
Peak repetitive pulsed power limits are determined by using
the thermal response data in conjunction with the procedures
discussed in AN569, “Transient Thermal
ResistanceGeneral Data and Its Use.”
Switching between the offstate and the onstate may
traverse any load line provided neither rated peak current
(IDM) nor rated voltage (VDSS) is exceeded and the
transition time (tr,tf) do not exceed 10 μs. In addition the total
power averaged over a complete switching cycle must not
exceed (TJ(MAX) TC)/(RθJC).
A Power MOSFET designated EFET can be safely used
in switching circuits with unclamped inductive loads. For
reliable operation, the stored energy from circuit inductance
dissipated in the transistor while in avalanche must be less
than the rated limit and adjusted for operating conditions
differing from those specified. Although industry practice is
to rate in terms of energy, avalanche energy capability is not
a constant. The energy rating decreases nonlinearly with an
increase of peak current in avalanche and peak junction
temperature.
Although many EFETs can withstand the stress of
draintosource avalanche at currents up to rated pulsed
current (IDM), the energy rating is specified at rated
continuous current (ID), in accordance with industry
custom. The energy rating must be derated for temperature
as shown in the accompanying graph (Figure 12). Maximum
energy at currents below rated continuous ID can safely be
assumed to equal the values indicated.
http://onsemi.com
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