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MTDF1C02HD の電気的特性と機能

MTDF1C02HDのメーカーはON Semiconductorです、この部品の機能は「Power MOSFET ( Transistor )」です。


製品の詳細 ( Datasheet PDF )

部品番号 MTDF1C02HD
部品説明 Power MOSFET ( Transistor )
メーカ ON Semiconductor
ロゴ ON Semiconductor ロゴ 




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MTDF1C02HD Datasheet, MTDF1C02HD PDF,ピン配置, 機能
MTDF1C02HD
Preferred Device
Power MOSFET
1 Amp, 20 Volts
Complementary Micro8t
These Power MOSFET devices are capable of withstanding high
energy in the avalanche and commutation modes and the draintosource
diode has a very low reverse recovery time. Micro8 devices are designed
for use in low voltage, high speed switching applications where power
efficiency is important. Typical applications are dcdc converters, and
power management in portable and battery powered products such as
computers, printers, cellular and cordless phones. They can also be used
for low voltage motor controls in mass storage products such as disk
drives and tape drives. The avalanche energy is specified to eliminate the
guesswork in designs where inductive loads are switched and offer
additional safety margin against unexpected voltage transients.
Miniature Micro8 Surface Mount Package Saves Board Space
Extremely Low Profile (<1.1mm) for thin applications such as
PCMCIA cards
Ultra Low RDS(on) Provides Higher Efficiency and Extends Battery
Life
Logic Level Gate Drive Can Be Driven by Logic ICs
Diode Is Characterized for Use In Bridge Circuits
Diode Exhibits High Speed, With Soft Recovery
IDSS Specified at Elevated Temperature
Avalanche Energy Specified
Mounting Information for Micro8 Package Provided
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Negative sign for PChannel devices omitted for clarity
Rating
Symbol Max
DraintoSource Voltage
NChannel
PChannel
VDSS
20
20
DraintoGate Voltage (RGS = 1.0 MW)
NChannel
PChannel
VDGR
20
20
GatetoSource Voltage Continuous
NChannel
PChannel
VGS
±8.0
±8.0
Operating and Storage Temperature Range
TJ and
Tstg
55 to
150
Unit
V
V
V
°C
http://onsemi.com
1 AMPERE, 20 VOLTS
RDS(on) = 120 mW (NChannel)
1 AMPERE, 20 VOLTS
RDS(on) = 175 mW (PChannel)
7
D
NChannel
8
5
D
PChannel
6
2
G
1S
4
G
3S
MARKING
DIAGRAM
8
Micro8
CASE 846A
WW
STYLE 2
CA
1
WW = Date Code
PIN ASSIGNMENT
Source1
Gate1
Source2
Gate2
18
27
36
45
Top View
Drain1
Drain1
Drain2
Drain2
ORDERING INFORMATION
Device
Package
Shipping
MTDF1C02HDR2 Micro8 4000 Tape & Reel
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2006
August, 2006 Rev. 2
1
Publication Order Number:
MTDF1C02HD/D

1 Page





MTDF1C02HD pdf, ピン配列
MTDF1C02HD
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Note 2)
Characteristic
Symbol Polarity
OFF CHARACTERISTICS
DrainSource Breakdown Voltage (Cpk 2.0)
(VGS = 0 Vdc, ID = 250 μAdc)
Breakdown Temperature Coefficient
(Positive)
(Notes 2 & 4)
Zero Gate Voltage Drain Current
(VGS = 0 Vdc, VDS = 16 Vdc)
(VGS = 0 Vdc, VDS = 20 Vdc)
GateBody Leakage Current (VGS = ± 8.0 Vdc, VDS = 0)
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
(VDS = VGS, ID = 250 μAdc)
(Cpk 2.0) ((Notes 2 & 4)
Threshold Temperature Coefficient
(Negative)
DraintoSource OnResistance
(VGS = 4.5 Vdc, ID = 1.7 Adc)
(VGS = 4.5 Vdc, ID = 1.6 Adc)
DraintoSource OnResistance (Cpk 2.0) (Notes 2 & 4)
(VGS = 2.7 Vdc, ID = 0.85 Adc)
(VGS = 2.7 Vdc, ID = 0.8 Adc)
Forward Transconductance (Note 2)
(VDS = 10 Adc, ID = 0.85 Adc)
(VDS = 10 Adc, ID = 0.6 Adc)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Transfer Capacitance
(VDS = 15 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
V(BR)DSS
IDSS
IGSS
VGS(th)
RDS(on)
RDS(on)
gFS
Ciss
Coss
Crss
(N)
(P)
(N)
(P)
(N)
(P)
(N)
(P)
(N)
(P)
(N)
(P)
(N)
(P)
(N)
(P)
(N)
(P)
(N)
(P)
(N)
(P)
SWITCHING CHARACTERISTICS (Note 4)
TurnOn Delay Time
Rise Time
(VDD = 10 Vdc, ID = 1.7 Adc,
VGS = 4.5 Vdc,
RG = 6.0 Ω) (Note 2)
TurnOff Delay Time
Fall Time
(VDD = 10 Vdc, ID = 1.2 Adc,
VGS = 4.5 Vdc,
RG = 6.0 Ω) (Note 2)
td(on)
tr
td(off)
tf
(N)
(P)
(N)
(P)
(N)
(P)
(N)
(P)
TurnOn Delay Time
Rise Time
TurnOff Delay Time
Fall Time
(VDS = 10 Vdc, ID = 0.85 Adc,
VGS = 2.7 Vdc,
RG = 6.0 Ω) (Note 2)
(VDS = 10 Vdc, ID = 0.6 Adc,
VGS = 2.7 Vdc,
RG = 6.0 Ω) (Note 2)
td(on)
tr
td(off)
tf
2. Negative signs for PChannel device omitted for clarity.
3. Pulse Test: Pulse Width 300 μs, Duty Cycle 2%.
4. Switching characteristics are independent of operating junction temperature.
(N)
(P)
(N)
(P)
(N)
(P)
(N)
(P)
Min
20
20
0.7
0.7
2.0
1.3
Typ Max Unit
− − Vdc
−−
5.0
14
μAdc
1.0
1.0
100 nAdc
0.90
0.95
2.5
2.2
0.100
0.146
0.133
0.220
1.1
1.4
0.120
0.175
0.16
0.28
Vdc
Ohm
Ohm
mhos
145
225
90
150
38
60
pF
8.0 ns
15
27
27
23
60
34
72
16
20
79
94
24
49
31
76
http://onsemi.com
3


3Pages


MTDF1C02HD 電子部品, 半導体
MTDF1C02HD
TYPICAL ELECTRICAL CHARACTERISTICS
0.6
0.5
0.4
0.3
0.2
0.1
0
0
0.15
0.13
NChannel
ID = 1.7 A
TJ = 25°C
2.0 4.0 6.0 8.0
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 3. OnResistance versus
GateToSource Voltage
10
2.7 V
TJ = 25°C
0.11
VGS = 4.5 V
0.09
0.07
0.05
0
1.0 2.0 3.0 4.0
ID, DRAIN CURRENT (AMPS)
Figure 4. OnResistance versus Drain Current
and Gate Voltage
2.0
VGS = 4.5 V
ID = 0.85 A
1.6
1.2
0.8
0.4
PChannel
0.4
ID = 1.6 A
0.3 TJ = 25°C
0.2
0.1
0
0
0.6
0.5
2.0 4.0 6.0 8.0
VGS, GATE−TO−SOURCE (VOLTS)
Figure 3. OnResistance versus
GateToSource Voltage
TJ = 25°C
10
0.4
2.7 V
0.3
0.2 VGS = 4.5 V
0.1
0
0 1.0 2.0 3.0 4.0
ID, DRAIN CURRENT (AMPS)
Figure 4. OnResistance versus Drain Current
and Gate Voltage
2.0
VGS = 4.5 V
ID = 0.8 A
1.5
1.0
0.5
0
−50 −25
0
25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. OnResistance Variation with
Temperature
0
−50 −25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. OnResistance Variation with
Temperature
http://onsemi.com
6

6 Page



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部品番号部品説明メーカ
MTDF1C02HD

Power MOSFET ( Transistor )

ON Semiconductor
ON Semiconductor


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