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MTDF1C02HDのメーカーはON Semiconductorです、この部品の機能は「Power MOSFET ( Transistor )」です。 |
部品番号 | MTDF1C02HD |
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部品説明 | Power MOSFET ( Transistor ) | ||
メーカ | ON Semiconductor | ||
ロゴ | |||
このページの下部にプレビューとMTDF1C02HDダウンロード(pdfファイル)リンクがあります。 Total 14 pages
MTDF1C02HD
Preferred Device
Power MOSFET
1 Amp, 20 Volts
Complementary Micro8t
These Power MOSFET devices are capable of withstanding high
energy in the avalanche and commutation modes and the drain−to−source
diode has a very low reverse recovery time. Micro8 devices are designed
for use in low voltage, high speed switching applications where power
efficiency is important. Typical applications are dc−dc converters, and
power management in portable and battery powered products such as
computers, printers, cellular and cordless phones. They can also be used
for low voltage motor controls in mass storage products such as disk
drives and tape drives. The avalanche energy is specified to eliminate the
guesswork in designs where inductive loads are switched and offer
additional safety margin against unexpected voltage transients.
• Miniature Micro8 Surface Mount Package − Saves Board Space
• Extremely Low Profile (<1.1mm) for thin applications such as
PCMCIA cards
• Ultra Low RDS(on) Provides Higher Efficiency and Extends Battery
Life
• Logic Level Gate Drive − Can Be Driven by Logic ICs
• Diode Is Characterized for Use In Bridge Circuits
• Diode Exhibits High Speed, With Soft Recovery
• IDSS Specified at Elevated Temperature
• Avalanche Energy Specified
• Mounting Information for Micro8 Package Provided
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Negative sign for P−Channel devices omitted for clarity
Rating
Symbol Max
Drain−to−Source Voltage
N−Channel
P−Channel
VDSS
20
20
Drain−to−Gate Voltage (RGS = 1.0 MW)
N−Channel
P−Channel
VDGR
20
20
Gate−to−Source Voltage − Continuous
N−Channel
P−Channel
VGS
±8.0
±8.0
Operating and Storage Temperature Range
TJ and
Tstg
−55 to
150
Unit
V
V
V
°C
http://onsemi.com
1 AMPERE, 20 VOLTS
RDS(on) = 120 mW (N−Channel)
1 AMPERE, 20 VOLTS
RDS(on) = 175 mW (P−Channel)
7
D
N−Channel
8
5
D
P−Channel
6
2
G
1S
4
G
3S
MARKING
DIAGRAM
8
Micro8
CASE 846A
WW
STYLE 2
CA
1
WW = Date Code
PIN ASSIGNMENT
Source−1
Gate−1
Source−2
Gate−2
18
27
36
45
Top View
Drain−1
Drain−1
Drain−2
Drain−2
ORDERING INFORMATION
Device
Package
Shipping
MTDF1C02HDR2 Micro8 4000 Tape & Reel
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2006
August, 2006 − Rev. 2
1
Publication Order Number:
MTDF1C02HD/D
1 Page MTDF1C02HD
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Note 2)
Characteristic
Symbol Polarity
OFF CHARACTERISTICS
Drain−Source Breakdown Voltage (Cpk ≥ 2.0)
(VGS = 0 Vdc, ID = 250 μAdc)
Breakdown Temperature Coefficient
(Positive)
(Notes 2 & 4)
Zero Gate Voltage Drain Current
(VGS = 0 Vdc, VDS = 16 Vdc)
(VGS = 0 Vdc, VDS = 20 Vdc)
Gate−Body Leakage Current (VGS = ± 8.0 Vdc, VDS = 0)
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
(VDS = VGS, ID = 250 μAdc)
(Cpk ≥ 2.0) ((Notes 2 & 4)
Threshold Temperature Coefficient
(Negative)
Drain−to−Source On−Resistance
(VGS = 4.5 Vdc, ID = 1.7 Adc)
(VGS = 4.5 Vdc, ID = 1.6 Adc)
Drain−to−Source On−Resistance (Cpk ≥ 2.0) (Notes 2 & 4)
(VGS = 2.7 Vdc, ID = 0.85 Adc)
(VGS = 2.7 Vdc, ID = 0.8 Adc)
Forward Transconductance (Note 2)
(VDS = 10 Adc, ID = 0.85 Adc)
(VDS = 10 Adc, ID = 0.6 Adc)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Transfer Capacitance
(VDS = 15 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
V(BR)DSS
IDSS
IGSS
VGS(th)
RDS(on)
RDS(on)
gFS
Ciss
Coss
Crss
(N)
(P)
(N)
(P)
(N)
(P)
−
(N)
(P)
(N)
(P)
(N)
(P)
(N)
(P)
(N)
(P)
(N)
(P)
(N)
(P)
(N)
(P)
SWITCHING CHARACTERISTICS (Note 4)
Turn−On Delay Time
Rise Time
(VDD = 10 Vdc, ID = 1.7 Adc,
VGS = 4.5 Vdc,
RG = 6.0 Ω) (Note 2)
Turn−Off Delay Time
Fall Time
(VDD = 10 Vdc, ID = 1.2 Adc,
VGS = 4.5 Vdc,
RG = 6.0 Ω) (Note 2)
td(on)
tr
td(off)
tf
(N)
(P)
(N)
(P)
(N)
(P)
(N)
(P)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
(VDS = 10 Vdc, ID = 0.85 Adc,
VGS = 2.7 Vdc,
RG = 6.0 Ω) (Note 2)
(VDS = 10 Vdc, ID = 0.6 Adc,
VGS = 2.7 Vdc,
RG = 6.0 Ω) (Note 2)
td(on)
tr
td(off)
tf
2. Negative signs for P−Channel device omitted for clarity.
3. Pulse Test: Pulse Width ≤ 300 μs, Duty Cycle ≤ 2%.
4. Switching characteristics are independent of operating junction temperature.
(N)
(P)
(N)
(P)
(N)
(P)
(N)
(P)
Min
20
20
−
−
−
−
−
0.7
0.7
−
−
−
−
−
−
2.0
1.3
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
Typ Max Unit
− − Vdc
−−
5.0 −
14 −
μAdc
− 1.0
− 1.0
− 100 nAdc
0.90
0.95
2.5
2.2
0.100
0.146
0.133
0.220
−
−
1.1
1.4
−
−
0.120
0.175
0.16
0.28
−
−
Vdc
Ohm
Ohm
mhos
145 −
225 −
90 −
150 −
38 −
60 −
pF
8.0 − ns
15 −
27 −
27 −
23 −
60 −
34 −
72 −
16 −
20 −
79 −
94 −
24 −
49 −
31 −
76 −
http://onsemi.com
3
3Pages MTDF1C02HD
TYPICAL ELECTRICAL CHARACTERISTICS
0.6
0.5
0.4
0.3
0.2
0.1
0
0
0.15
0.13
N−Channel
ID = 1.7 A
TJ = 25°C
2.0 4.0 6.0 8.0
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 3. On−Resistance versus
Gate−To−Source Voltage
10
2.7 V
TJ = 25°C
0.11
VGS = 4.5 V
0.09
0.07
0.05
0
1.0 2.0 3.0 4.0
ID, DRAIN CURRENT (AMPS)
Figure 4. On−Resistance versus Drain Current
and Gate Voltage
2.0
VGS = 4.5 V
ID = 0.85 A
1.6
1.2
0.8
0.4
P−Channel
0.4
ID = 1.6 A
0.3 TJ = 25°C
0.2
0.1
0
0
0.6
0.5
2.0 4.0 6.0 8.0
VGS, GATE−TO−SOURCE (VOLTS)
Figure 3. On−Resistance versus
Gate−To−Source Voltage
TJ = 25°C
10
0.4
2.7 V
0.3
0.2 VGS = 4.5 V
0.1
0
0 1.0 2.0 3.0 4.0
ID, DRAIN CURRENT (AMPS)
Figure 4. On−Resistance versus Drain Current
and Gate Voltage
2.0
VGS = 4.5 V
ID = 0.8 A
1.5
1.0
0.5
0
−50 −25
0
25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On−Resistance Variation with
Temperature
0
−50 −25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On−Resistance Variation with
Temperature
http://onsemi.com
6
6 Page | |||
ページ | 合計 : 14 ページ | ||
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部品番号 | 部品説明 | メーカ |
MTDF1C02HD | Power MOSFET ( Transistor ) | ON Semiconductor |