MMSF1310 Datasheet PDF - ON Semiconductor
| Part Number | MMSF1310 | |
| Description | Power MOSFET ( Transistor ) | |
| Manufacturers | ON Semiconductor | |
| Logo |  |
|
|
There is a preview and MMSF1310 download ( pdf file ) link at the bottom of this page. Total 12 Pages | ||
Preview 1 page No Preview Available !
MMSF1310
Preferred Device
Power MOSFET
10 Amps, 30 Volts
N−Channel SO−8
These miniature surface mount MOSFETs feature ultra low RDS(on)
and true logic level performance. They are capable of withstanding high
energy in the avalanche and commutation modes and the drain−to−source
diode has a very low reverse recovery time. MiniMOSt devices are
designed for use in low voltage, high speed switching applications where
power efficiency is important. Typical applications are dc−dc converters,
and power management in portable and battery powered products such as
computers, printers, cellular and cordless phones. They can also be used
for low voltage motor controls in mass storage products such as disk
drives and tape drives. The avalanche energy is specified to eliminate the
guesswork in designs where inductive loads are switched and offer
additional safety margin against unexpected voltage transients.
• Low RDS(on) Provides Higher Efficiency and Extends Battery Life
• High Speed Switching Provides High Efficiency for DC/DC
Converter
• Miniature SO−8 Surface Mount Package − Saves Board Space
• Diode Exhibits High Speed, With Soft Recovery
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Max
Drain−to−Source Voltage
Drain−to−Gate Voltage (RGS = 1.0 MΩ)
Gate−to−Source Voltage − Continuous
Continuous Drain Current @ TA = 25°C
(Note 1.)
Pulsed Drain Current (Note 2.)
Total Power Dissipation @ TA = 25°C
(Note 1.)
VDSS
VDGR
VGS
ID
IDM
PD
30
30
± 20
10
50
2.5
Operating and Storage Temperature Range TJ, Tstg − 55 to
150
Unit
Vdc
Vdc
Vdc
Adc
W
°C
THERMAL RESISTANCE
Junction−to−Ambient (Note 1.)
RθJA
50 °C/W
1. When mounted on 1″ square FR−4 or G−10 board
(VGS = 10 V, @ 10 Seconds)
2. Repetitive rating; pulse width limited by maximum junction temperature.
http://onsemi.com
10 AMPERES
30 VOLTS
RDS(on) = 15 mW
N−Channel
D
G
S
MARKING
DIAGRAM
SO−8
8 CASE 751
STYLE 12
1
S1310
LYWW
L = Location Code
Y = Year
WW = Work Week
PIN ASSIGNMENT
Source
Source
Source
Gate
18
27
36
45
Top View
Drain
Drain
Drain
Drain
ORDERING INFORMATION
Device
Package
Shipping
MMSF1310R2
SO−8 2500 Tape & Reel
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2000
September, 2004 − Rev. XXX
1
Publication Order Number:
MMSF1310/D
|
| |
 
MMSF1310
1000
TJ = 25°C
ID = 10 A
VDD = 24 V
100 VGS = 10 V
tf
td(off)
tr
10 td(on)
1
1 10 100
RG, GATE RESISTANCE (OHMS)
Figure 8. Resistive Switching Time Variation
versus Gate Resistance
DRAIN−TO−SOURCE DIODE CHARACTERISTICS
The switching characteristics of a MOSFET body diode
are very important in systems using it as a freewheeling or
commutating diode. Of particular interest are the reverse
recovery characteristics which play a major role in
determining switching losses, radiated noise, EMI and RFI.
System switching losses are largely due to the nature of
the body diode itself. The body diode is a minority carrier
device, therefore it has a finite reverse recovery time, trr, due
to the storage of minority carrier charge, QRR, as shown in
the typical reverse recovery wave form of Figure 10. It is this
stored charge that, when cleared from the diode, passes
through a potential and defines an energy loss. Obviously,
repeatedly forcing the diode through reverse recovery
further increases switching losses. Therefore, one would
like a diode with short trr and low QRR specifications to
minimize these losses.
The abruptness of diode reverse recovery effects the
amount of radiated noise, voltage spikes, and current
ringing. The mechanisms at work are finite irremovable
circuit parasitic inductances and capacitances acted upon by
high di/dts. The diode’s negative di/dt during ta is directly
controlled by the device clearing the stored charge.
However, the positive di/dt during tb is an uncontrollable
diode characteristic and is usually the culprit that induces
current ringing. Therefore, when comparing diodes, the
ratio of tb/ta serves as a good indicator of recovery
abruptness and thus gives a comparative estimate of
probable noise generated. A ratio of 1 is considered ideal and
values less than 0.5 are considered snappy.
Compared to ON Semiconductor standard cell density
low voltage MOSFETs, high cell density MOSFET diodes
are faster (shorter trr), have less stored charge and a softer
reverse recovery characteristic. The softness advantage of
the high cell density diode means they can be forced through
reverse recovery at a higher di/dt than a standard cell
MOSFET diode without increasing the current ringing or the
noise generated. In addition, power dissipation incurred
from switching the diode will be less due to the shorter
recovery time and lower switching losses.
10
VGS = 0 V
TJ = 25°C
8
6
4
2
0
0 0.2 0.4 0.6 0.8 1
VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
Figure 9. Diode Forward Voltage versus Current
http://onsemi.com
5
Preview 5 Page |
Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for MMSF1310 electronic component. |
| Information | Total 12 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Download | [ MMSF1310.PDF Datasheet ] | |
Share Link :
Electronic Components Distributor
|
An electronic components distributor is a company that sources, stocks, and sells electronic components to manufacturers, engineers, and hobbyists. |
| SparkFun Electronics | Allied Electronics | DigiKey Electronics | Arrow Electronics |
| Mouser Electronics | Adafruit | Newark | Chip One Stop |
Featured Datasheets
| Part Number | Description | MFRS |
| MMSF1310 | The function is Power MOSFET ( Transistor ). ON Semiconductor | |
Semiconductors commonly used in industry:
1N4148 |
BAW56 |
1N5400 |
NE555 | | ||
Quick jump to:
MMSF
1N4
2N2
2SA
2SC
74H
BC
HCF
IRF
KA | ||