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CPH3442 の電気的特性と機能

CPH3442のメーカーはSanyoです、この部品の機能は「N-Channel Silicon MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 CPH3442
部品説明 N-Channel Silicon MOSFET
メーカ Sanyo
ロゴ Sanyo ロゴ 




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CPH3442 Datasheet, CPH3442 PDF,ピン配置, 機能
Ordering number : ENA0094
CPH3442
CPH3442
Features
Low ON-resistance.
Ultrahigh-speed switching.
2.5V drive.
N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
Conditions
PW10µs, duty cycle1%
Mounted on a ceramic board (900mm2!0.8mm)
Ratings
30
±10
6.5
26
1.2
150
--55 to +150
Unit
V
V
A
A
W
°C
°C
Electrical Characteristics at Ta=25°C
Parameter
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Marking : ZR
Symbol
Conditions
V(BR)DSS
IDSS
IGSS
VGS(off)
yfs
RDS(on)1
RDS(on)2
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
ID=1mA, VGS=0V
VDS=30V, VGS=0V
VGS=±8V, VDS=0V
VDS=10V, ID=1mA
VDS=10V, ID=3A
ID=3A, VGS=4V
ID=1.5A, VGS=2.5V
VDS=10V, f=1MHz
VDS=10V, f=1MHz
VDS=10V, f=1MHz
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
min
30
0.4
6
Ratings
typ
max
Unit
V
1 µA
±10 µA
1.4 V
10 S
17 24 m
22 31 m
1295
pF
239 pF
183 pF
21 ns
85 ns
156 ns
125 ns
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
92005PE MS IM TB-00001598 No. A0094-1/4

1 Page





CPH3442 pdf, ピン配列
CPH3442
3
2 VDS=10V
yfs-- ID
10
7
5
3
2
Ta=
--25°C
75°C
1.0
7
25°C
5
3
2
0.1
0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10
Drain Current, ID -- A
IT10184
SW Time -- ID
5
VDD=15V
3 VGS=4V
2 td(off)
tf
100
7
5 tr
10
7
5
3
2
1.0
7
5
3
2
0.1
7
5
3
2
0.01
0.2
5
3
2
1000
7
5
IS -- VSD
VGS=0V
0.4 0.6 0.8 1.0 1.2
Diode Forward Voltage, VSD -- V IT10185
Ciss, Coss, Crss -- VDS
f=1MHz
Ciss
3
td(on)
2
10
0.1
23
4.0
VDS=10V
3.5 ID=6.5A
5 7 1.0
23
Drain Current, ID -- A
VGS -- Qg
5 7 10
IT10308
3.0
2.5
2.0
1.5
1.0
0.5
0
0 2 4 6 8 10 12 14 16 18
Total Gate Charge, Qg -- nC
IT10310
PD -- Ta
1.4
3
Coss
2
Crss
100
0
5 10 15 20 25 30
Drain-to-Source Voltage, VDS -- V IT10309
ASO
5
3 IDP=26A
<10µs
2
10
7
ID=6.5A
1ms 100µs
5
3
2
1.0
7
5
3 Operation in this
DC
100ms
operation
10ms
2 area is limited by RDS(on).
0.1
7
5
3 Ta=25°C
2 Single pulse
0.01 Mounted on a ceramic board (900mm2!0.8mm)
0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 5
Drain-to-Source Voltage, VDS -- V IT10189
1.2
1.0
0.8
0.6
0.4
0.2
Mounted on a ceramic board (900mm 2!0.8mm)
0
0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta -- °C
IT10146
No. A0094-3/4


3Pages





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共有リンク

Link :


部品番号部品説明メーカ
CPH3442

N-Channel Silicon MOSFET

Sanyo
Sanyo
CPH3448

Power MOSFET ( Transistor )

ON Semiconductor
ON Semiconductor


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