DataSheet.jp

MDD5N50G の電気的特性と機能

MDD5N50GのメーカーはMagnaChipです、この部品の機能は「N-Channel MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 MDD5N50G
部品説明 N-Channel MOSFET
メーカ MagnaChip
ロゴ MagnaChip ロゴ 




このページの下部にプレビューとMDD5N50Gダウンロード(pdfファイル)リンクがあります。

Total 6 pages

No Preview Available !

MDD5N50G Datasheet, MDD5N50G PDF,ピン配置, 機能
MDD5N50G
N-Channel MOSFET 500V, 4.4 A, 1.4
General Description
The MDD5N50G uses advanced Magnachips
MOSFET Technology, which provides low on-state
resistance, high switching performance and
excellent quality.
MDD5N50G is suitable device for SMPS, HID and
general purpose applications.
Features
VDS = 500V
VDS = 550V
ID = 4.4A
RDS(ON) ≤ 1.4
@ Tjmax
@VGS = 10V
@VGS = 10V
Applications
Power Supply
PFC
Ballast
TO-252
(DPAK)
D
G
S
Absolute Maximum Ratings (Ta = 25oC)
Characteristics
Drain-Source Voltage
Drain-Source Voltage @ Tjmax
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current(1)
Power Dissipation
Peak Diode Recovery dv/dt(3)
Single Pulse Avalanche Energy(4)
Junction and Storage Temperature Range
Thermal Characteristics
Characteristics
Thermal Resistance, Junction-to-Ambient(1)
Thermal Resistance, Junction-to-Case(1)
TC=25oC
TC=100oC
TC=25oC
Derate above 25 oC
Symbol
VDSS
VDSS @ Tjmax
VGSS
ID
IDM
PD
Dv/dt
EAS
TJ, Tstg
Rating
500
550
±30
4.4
2.8
17.6
70
0.56
4.5
230
-55~150
Unit
V
V
V
A
A
A
W
W/ oC
V/ns
mJ
oC
Symbol
RθJA
RθJC
Rating
110
1.8
Unit
oC/W
Feb.2010. Version 1.2
1 MagnaChip Semiconductor Ltd.

1 Page





MDD5N50G pdf, ピン配列
Vgs=5.5V
=6.0V
10 =6.5V
=7.0V
=8.0V
=10.0V
1
Notes
1. 250PulseTest
2. TC=25
0.1
0.1 1 10
VDS,Drain-Source Voltage [V]
Fig.1 On-Region Characteristics
3.0
Notes :
2.5
1. VGS = 10 V
2. ID = 2.5A
2.0
1.5
1.0
0.5
0.0
-50
0 50 100
TJ, Junction Temperature [oC]
150
Fig.3 On-Resistance Variation with
Temperature
2.4
2.3
2.2
2.1
2.0
1.9
1.8
1.7
1.6
VGS=10.0V
VGS=20V
1.5
1.4
1.3
1.2
1.1
1.0
0 5 10 15 20
ID,DrainCurrent [A]
Fig.2 On-Resistance Variation with
Drain Current and Gate Voltage
25
1.2
Notes :
1. VGS = 0 V
2. ID = 250
1.1
1.0
0.9
0.8
-50
0 50 100
TJ, Junction Temperature [oC]
150
Fig.4 Breakdown Voltage Variation vs.
Temperature
* Notes ;
1. VDS=30V
10
150
25
-55
1
4567
VGS [V]
Fig.5 Transfer Characteristics
8
Feb.2010. Version 1.2
3
100
Notes :
1. VGS = 0 V
2. 250uS Pulse Test
10
1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
VSD, Source-Drain Voltage [V]
Fig.6 Body Diode Forward Voltage
Variation with Source Current and
Temperature
MagnaChip Semiconductor Ltd.


3Pages


MDD5N50G 電子部品, 半導体
Worldwide Sales Support Locations
U.S.A
Sunnyvale Office
787 N. Mary Ave. Sunnyvale
CA 94085 U.S.A
Tel : 1-408-636-5200
Fax : 1-408-213-2450
U.K
Knyvett House The Causeway,
Staines Middx, TW18 3BA,U.K.
Tel : +44 (0) 1784-895-000
Fax : +44 (0) 1784-895-115
Japan
Osaka Office
3F, Shin-Osaka MT-2 Bldg 3-5-36
Miyahara Yodogawa-Ku
Osaka, 532-0003 Japan
Tel : 81-6-6394-9160
Fax : 81-6-6394-9150
Taiwan R.O.C
2F, No.61, Chowize Street, Nei Hu
Taipei,114 Taiwan R.O.C
Tel : 886-2-2657-7898
Fax : 886-2-2657-8751
China
Hong Kong Office
Suite 1024, Ocean Centre 5 Canton Road,
Tsim Sha Tsui Kowloon, Hong Kong
Tel : 852-2828-9700
Fax : 852-2802-8183
Shenzhen Office
Room 2003B, 20/F
International Chamber of Commerce Tower
Fuhua Road3 CBD, Futian District, China
Tel : 86-755-8831-5561
Fax : 86-755-8831-5565
Shanghai Office
Room E, 8/F, Liaoshen International Building 1068
Wuzhong Road, (C) 201103
Shanghai, China
Tel : 86-21-6405-1521
Fax : 86-21-6505-1523
Korea
891, Daechi-Dong, Kangnam-Gu
Seoul, 135-738 Korea
Tel : 82-2-6903-3451
Fax : 82-2-6903-3668 ~9
DISCLAIMER:
The Products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power
generation, medical appliances, and devices or systems in which malfunction of any Product can reasonably be
expected to result in a personal injury. Seller’s customers using or selling Seller’s products for use in such
applications do so at their own risk and agree to fully defend and indemnify Seller.
MagnaChip reserves the right to change the specifications and circuitry without notice at any time. MagnaChip does not consider responsibility
for use of any circuitry other than circuitry entirely included in a MagnaChip product.
is a registered trademark of MagnaChip
Semiconductor Ltd.
Feb.2010. Version 1.2
6 MagnaChip Semiconductor Ltd.

6 Page



ページ 合計 : 6 ページ
 
PDF
ダウンロード
[ MDD5N50G データシート.PDF ]


データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。


共有リンク

Link :


部品番号部品説明メーカ
MDD5N50

N-Channel MOSFET

MagnaChip
MagnaChip
MDD5N50G

N-Channel MOSFET

MagnaChip
MagnaChip
MDD5N50Z

N-Channel MOSFET

MagnaChip
MagnaChip


www.DataSheet.jp    |   2020   |  メール    |   最新    |   Sitemap