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6LN04SS の電気的特性と機能

6LN04SSのメーカーはSanyoです、この部品の機能は「N-Channel Silicon MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 6LN04SS
部品説明 N-Channel Silicon MOSFET
メーカ Sanyo
ロゴ Sanyo ロゴ 




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6LN04SS Datasheet, 6LN04SS PDF,ピン配置, 機能
Ordering number : ENA0940
6LN04SS
SANYO Semiconductors
DATA SHEET
6LN04SS
Features
1.5V drive.
Halogen Free compliance.
N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
Conditions
PW10μs, duty cycle1%
When mounted on glass epoxy substrate (145mm80mm1.6mm)
Electrical Characteristics at Ta=25°C
Ratings
60
±10
200
800
0.15
150
--55 to +150
Unit
V
V
mA
mA
W
°C
°C
Parameter
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Marking : YS
Symbol
Conditions
V(BR)DSS
IDSS
IGSS
VGS(off)
yfs
RDS(on)1
RDS(on)2
RDS(on)3
Ciss
Coss
Crss
ID=1mA, VGS=0V
VDS=60V, VGS=0V
VGS=±8V, VDS=0V
VDS=10V, ID=100μA
VDS=10V, ID=100mA
ID=100mA, VGS=4V
ID=50mA, VGS=2.5V
ID=10mA, VGS=1.5V
VDS=20V, f=1MHz
VDS=20V, f=1MHz
VDS=20V, f=1MHz
min
60
0.4
280
Ratings
typ
max
Unit
V
1 μA
±10 μA
1.3 V
480 mS
2.2 2.9 Ω
2.4 3.4 Ω
3.5 7.0 Ω
26 pF
5.9 pF
3.2 pF
Continued on next page.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer's products or
equipment.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
11608PE TI IM TC-00001130 No. A0940-1/4

1 Page





6LN04SS pdf, ピン配列
6LN04SS
RDS(on) -- VGS
10
Ta=25°C
9
8
7
6
50mA
5
100mA
4
3
2 ID=10mA
1
0
02468
Gate-to-Source Voltage, VGS -- V
yfs-- ID
1000
7 VDS=10V
5
3
2
10
IT11276
100
7
5
3
2
Ta=752°C5°C --25°C
10
7
5
3
2
1.0
0.1
3
2
1000
7
5
3
2
100
7
5
3
2
2 3 5 7 1.0 2 3 5 7 10 2 3 5 7 100
Drain Current, ID -- mA
SW Time -- ID
IT11278
VDD=30V
VGS=4V
td(off)
tf
td(on)
tr
10
0.001
23
5 7 0.01
23
5 7 0.1
4.0
VDS=30V
Drain Current, ID -- A
VGS -- Qg
3.5 ID=200mA
2 3 57
IT11279
3.0
RDS(on) -- Ta
7
6
5
4
3
2
V GVSV=GG1S.S=5=V24.,5.0IVVD, ,=II1DD0==m510A0m0AmA
1
0
--60 --40 --20 0 20 40 60 80 100 120
1000
7
5
VGS=0V
Ambient Temperature, Ta -- °C
IS -- VSD
3
2
140 160
IT11277
100
7
5
3
2
10
7
5
3
2
1.0
7
5
3
2
0.1
0.3
7
5
0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
Diode Forward Voltage, VSD -- V IT11322
Ciss, Coss, Crss -- VDS
f=1MHz
3 Ciss
2
10
7 Coss
5
3 Crss
2
1.0
0
0.16
0.15
0.14
5 10 15 20 25 30 35 40 45 50 55 60
Drain-to-Source Voltage, VDS -- V IT11280
PD -- Ta
When mounted on glass epoxy substrate
(145mm80mm1.6mm)
0.12
2.5 0.10
2.0 0.08
1.5 0.06
1.0 0.04
0.5
0
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Total Gate Charge, Qg -- nC
IT11281
0.02
0
0
20 40 60 80 100 120 140 160
Ambient Temperature, Ta -- °C
IT12961
No. A0940-3/4


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部品番号部品説明メーカ
6LN04SS

N-Channel Silicon MOSFET

Sanyo
Sanyo


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