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PDF IXTJ36N20 Data sheet ( Hoja de datos )
| Número de pieza | IXTJ36N20 | |
| Descripción | N-Channel Enhancement Mode HiPerFET | |
| Fabricantes | IXYS | |
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ADVANCE TECHNICAL INFORMATION
HiPerFETTM
N-Channel Enhancement Mode
IXTJ 36N20
VDSS = 200 V
ID25 = 36 A
RDS(on) = 70 mΩ
trr < 200 ns
Symbol
Test Conditions
VDSS
VDGR
VGS
V
GSM
ID25
IDM
IAR
EAR
dv/dt
P
D
TJ
TJM
Tstg
Md
Weight
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MΩ
Continuous
Transient
TC = 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS,
TJ ≤ 150°C, RG = 2 Ω
TC = 25°C
Mounting torque
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Maximum Ratings
200 V
200 V
±20 V
±30 V
36 A
144 A
36 A
19 mJ
5 V/ns
300 W
-55 ... +150
150
-55 ... +150
°C
°C
°C
1.13/10 Nm/lb.in.
5g
300 ° C
Symbol
V
DSS
VGS(th)
IGSS
I
DSS
RDS(on)
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VGS = 0 V, ID = 250 µA
VDS = VGS, ID = 4 mA
VGS = ±20 VDC, VDS = 0
VDS = 0.8 VDSS
VGS = 0 V
TJ = 25°C
TJ = 125°C
VGS = 10 V, ID = 18A
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
200
2
V
4V
±100 nA
25 µA
250 µA
70 mΩ
G
D
S
é
(TAB)
G = Gate,
S = Source,
D = Drain,
TAB = Drain
Features
• International standard package
JEDEC TO-247 AD
• Low RDS (on) HDMOSTM process
•Rugged polysilicon gate cell structure
•High commutating dv/dt rating
•Fast switching times
Applications
• Switch-mode and resonant-mode
power supplies
• Motor controls
• Uninterruptible Power Supplies (UPS)
• DC choppers
Advantages
• Easy to mount with 1 screw
(isolated mounting screw hole)
• Space savings
• High power density
© 2001 IXYS All rights reserved
98859 9/01
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet IXTJ36N20.PDF ] | |
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