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IXTJ36N20 PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 IXTJ36N20
部品説明 N-Channel Enhancement Mode HiPerFET
メーカ IXYS
ロゴ IXYS ロゴ 



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IXTJ36N20 Datasheet, IXTJ36N20 PDF,ピン配置, 機能
ADVANCE TECHNICAL INFORMATION
HiPerFETTM
N-Channel Enhancement Mode
IXTJ 36N20
VDSS = 200 V
ID25 = 36 A
RDS(on) = 70 m
trr < 200 ns
Symbol
Test Conditions
VDSS
VDGR
VGS
V
GSM
ID25
IDM
IAR
EAR
dv/dt
P
D
TJ
TJM
Tstg
Md
Weight
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 M
Continuous
Transient
TC = 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
IS IDM, di/dt 100 A/µs, VDD VDSS,
TJ 150°C, RG = 2
TC = 25°C
Mounting torque
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Maximum Ratings
200 V
200 V
±20 V
±30 V
36 A
144 A
36 A
19 mJ
5 V/ns
300 W
-55 ... +150
150
-55 ... +150
°C
°C
°C
1.13/10 Nm/lb.in.
5g
300 ° C
Symbol
V
DSS
VGS(th)
IGSS
I
DSS
RDS(on)
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VGS = 0 V, ID = 250 µA
VDS = VGS, ID = 4 mA
VGS = ±20 VDC, VDS = 0
VDS = 0.8 VDSS
VGS = 0 V
TJ = 25°C
TJ = 125°C
VGS = 10 V, ID = 18A
Pulse test, t 300 µs, duty cycle d 2 %
200
2
V
4V
±100 nA
25 µA
250 µA
70 m
G
D
S
é
(TAB)
G = Gate,
S = Source,
D = Drain,
TAB = Drain
Features
International standard package
JEDEC TO-247 AD
Low RDS (on) HDMOSTM process
Rugged polysilicon gate cell structure
High commutating dv/dt rating
Fast switching times
Applications
Switch-mode and resonant-mode
power supplies
Motor controls
Uninterruptible Power Supplies (UPS)
DC choppers
Advantages
Easy to mount with 1 screw
(isolated mounting screw hole)
Space savings
High power density
© 2001 IXYS All rights reserved
98859 9/01

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N-Channel Enhancement Mode HiPerFET

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