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IXTH12N120 の電気的特性と機能

IXTH12N120のメーカーはIXYSです、この部品の機能は「Power MOSFET ( Transistor )」です。


製品の詳細 ( Datasheet PDF )

部品番号 IXTH12N120
部品説明 Power MOSFET ( Transistor )
メーカ IXYS
ロゴ IXYS ロゴ 




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IXTH12N120 Datasheet, IXTH12N120 PDF,ピン配置, 機能
Power MOSFET, Avalanche Rated
High Voltage
Preliminary Data Sheet
IXTH 12N120
VDSS = 1200 V
ID (cont) = 12 A
RDS(on)=
1.4
Symbol Test Conditions
VDSS
VDGR
VGS
VGSM
ID25
IDM
IAR
EEAARS
PD
TJ
TJM
Tstg
Md
Weight
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 M
Continuous
Transient
TC = 25°C
TC = 25°C, pulse width limited by TJM
TTCC
= 25°C
= 25°C
TC = 25°C
Mounting torque
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Maximum Ratings
1200
1200
V
V
±30 V
±40 V
12 A
48 A
12 A
30 mJ
1.0 J
500 W
-55 ... +150
150
-55 ... +150
°C
°C
°C
1.13/10 Nm/lb.in.
6g
300 °C
TO-247 AD
D (TAB)
G = Gate,
S = Source,
D = Drain,
TAB = Drain
Features
z International standard package
JEDEC TO-247 AD
z Low RDS (on) HDMOSTM process
z Rugged polysilicon gate cell structure
z Fast switching times
Symbol
VDSS
VGS(th)
IGSS
IDSS
RDS(on)
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VGS = 0 V, ID = 1 mA
VDS = VGS, ID = 250 µA
1200
3
VGS = ±30 VDC, VDS = 0
VVGDSS
=
=
0VDVSS
TTJJ
=
=
25°C
125°C
PVGuSlse=
10 V,
test, t
ID
3=000.5µ•s,IDd25uty
cycle
d
2
%
V
5V
±100 nA
25 µA
3 mA
1.4
Applications
z Switch-mode and resonant-mode
power supplies
z Motor controls
z Uninterruptible Power Supplies (UPS)
z DC choppers
Advantages
z Easy to mount with 1 screw
(isolated mounting screw hole)
z Space savings
z High power density
© 2004 IXYS All rights reserved
DS98937E(04/04)

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IXTH12N120 pdf, ピン配列
12
11
10
9
8
7
6
5
4
3
2
1
0
0
12
11
10
9
8
7
6
5
4
3
2
1
0
0
Fig. 1. Output Characteristics
@ 25ºC
VGS = 10V
8V
7.5V
7V
6.5V
6V
2 4 6 8 10 12 14 16 18
VD S - Volts
Fig. 3. Output Characteristics
@ 125ºC
VGS = 10V
8V
7V
6.5V
6V
5.5V
5V
4 8 12 16 20 24 28 32 36 40
VD S - Volts
Fig. 5. RDS(on) Norm alize d to
0.5 ID25 Value vs. ID
2.8
2.6 VGS = 10V
2.4
2.2
TJ = 125ºC
2
1.8
1.6
1.4 TJ = 25ºC
1.2
1
0.8
0 2 4 6 8 10 12 14 16 18 20
I D - Amperes
© 2004 IXYS All rights reserved
IXTH 12N120
Fig. 2. Extended Output Characteristics
@ 25ºC
20
18 VGS = 10V
8V
16
14 6.5V
12
10 7V
8
6 6.5V
4
2 6V
0
0 3 6 9 12 15 18 21 24 27 30
VD S - Volts
Fig. 4. RDS(on) Norm alized to 0.5 ID25
Value vs . Junction Tem perature
3.1
2.8 VGS = 10V
2.5
2.2
1.9 ID = 12A
1.6
ID = 6A
1.3
1
0.7
0.4
-50
-25
0 25 50 75 100 125 150
TJ - Degrees Centigrade
Fig. 6. Drain Curre nt vs . Cas e
Tem pe rature
14
12
10
8
6
4
2
0
-50 -25 0 25 50 75 100 125 150
TC - Degrees Centigrade


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部品番号部品説明メーカ
IXTH12N120

Power MOSFET ( Transistor )

IXYS
IXYS


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