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IXFH6N100 の電気的特性と機能

IXFH6N100のメーカーはIXYSです、この部品の機能は「Power MOSFETs」です。


製品の詳細 ( Datasheet PDF )

部品番号 IXFH6N100
部品説明 Power MOSFETs
メーカ IXYS
ロゴ IXYS ロゴ 




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IXFH6N100 Datasheet, IXFH6N100 PDF,ピン配置, 機能
HiPerFETTM
Power MOSFETs
N-Channel Enhancement Mode
High dv/dt, Low trr, HDMOSTM Family
IXFH/IXFM6N90
IXFH/IXFM6N100
V
DSS
900 V
1000 V
I
D25
6A
6A
trr £ 250 ns
R
DS(on)
1.8 W
2.0 W
Symbol
VDSS
V
DGR
VGS
VGSM
ID25
IDM
I
AR
EAR
dv/dt
PD
T
J
TJM
T
stg
TL
Md
Weight
Symbol
VDSS
VGS(th)
IGSS
IDSS
RDS(on)
Test Conditions
Maximum Ratings TO-247 AD (IXFH)
TJ = 25°C to 150°C
T
J
=
25°C
to
150°C;
R
GS
=
1
MW
Continuous
Transient
TC = 25°C
TC = 25°C, pulse width limited by TJM
T
C
= 25°C
TC = 25°C
IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS,
TJ £ 150°C, RG = 2 W
TC = 25°C
1.6 mm (0.062 in.) from case for 10 s
Mounting torque
6N90
6N100
900
1000
±20
±30
6
24
6
18
5
V
V
V
V
A
A
A
mJ
V/ns
180 W
-55 ... +150
150
-55 ... +150
°C
°C
°C
300 °C
1.13/10 Nm/lb.in.
TO-204 = 18 g, TO-247 = 6 g
Test Conditions
Characteristic Values
(T
J
=
25°C,
unless
otherwise
specified)
min. typ. max.
VGS = 0 V, ID = 3 mA
6N90
6N100
VDS = VGS, ID = 2.5 mA
VGS = ±20 VDC, VDS = 0
VDS = 0.8 • VDSS
VGS = 0 V
TJ = 25°C
TJ = 125°C
VGS = 10 V, ID = 0.5 • ID25
6N90
6N100
Pulse test, t £ 300 ms, duty cycle d £ 2 %
900
1000
2.0
V
V
4.5 V
±100 nA
250 mA
1 mA
1.8 W
2.0 W
TO-204 AA (IXFM)
(TAB)
G = Gate,
S = Source,
G
D
D = Drain,
TAB = Drain
Features
• International standard packages
• Low RDS (on) HDMOSTM process
• Rugged polysilicon gate cell structure
• Unclamped Inductive Switching (UIS)
rated
• Low package inductance
- easy to drive and to protect
• Fast intrinsic Rectifier
Applications
• DC-DC converters
• Synchronous rectification
• Battery chargers
• Switched-mode and resonant-mode
power supplies
• DC choppers
• AC motor control
• Temperature and lighting controls
• Low voltage relays
Advantages
• Easy to mount with 1 screw (TO-247)
(isolated mounting screw hole)
• Space savings
• High power density
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
91529E(10/95)
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IXFH6N100 pdf, ピン配列
Fig. 1 Output Characteristics
9
8 TJ =25°C
7
6
5
4
3
2
1
0
0 5 10
VGS = 10V
15 20
VDS - Volts
6V
5V
25 30
Fig. 3 RDS(on) vs. Drain Current
3.0
TJ =25°C
2.8
2.6
2.4
VGS= 10V
2.2
VGS= 15V
2.0
1.8
0 2 4 6 8 10
ID - Amperes
Fig. 5 Drain Current vs.
Case Temperature
7
6
6N90
5
4
6N100
3
2
1
0
-50 -25 0 25 50 75 100 125 150
TC - Degrees C
IXFH 6N90
IXFM 6N90
IXFH 6N100
IXFM 6N100
Fig. 2 Input Admittance
9
8
7
6
5 TJ = 25°C
4
TJ = 125°C
3
2
TJ = - 55°C
1
0
3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5
VGS - Volts
Fig. 4 Temperature Dependence
of Drain to Source Resistance
2.50
2.25
2.00
1.75
1.50
ID = 3.0A
1.25
1.00
0.75
0.50
-50 -25 0 25 50 75 100 125 150
TJ - Degrees C
Fig. 6 Temperature Dependence of
Breakdown and Threshold Voltage
1.2
VGS(th)
BVDSS
1.1
1.0
0.9
0.8
0.7
0.6
0.5
-50 -25 0 25 50 75 100 125 150
TJ- Degrees C
© 2000 IXYS All rights reserved
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共有リンク

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部品番号部品説明メーカ
IXFH6N100

Power MOSFETs

IXYS
IXYS
IXFH6N100F

Power MOSFETs

IXYS Corporation
IXYS Corporation


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