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CPC3703 データシート PDF ( 特性, スペック, ピン接続図 )

部品番号 CPC3703
部品説明 250V N-Channel Depletion-Mode FET
メーカ IXYS
ロゴ IXYS ロゴ 

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CPC3703 Datasheet, CPC3703 PDF,ピン配置, 機能
INTEGRATED CIRCUITS DIVISION
V(BR)DSX /
V(BR)DGX
250V
RDS(on)
(max)
4
IDSS (min)
360mA
Package
SOT-89
Features
High Breakdown Voltage: 250V
Low On-Resistance: 4max. at 25ºC
Low VGS(off) Voltage: -1.6 to -3.9V
Depletion Mode Device Offers Low RDS(on)
at Cold Temperatures
High Input Impedance
Small Package Size: SOT-89
Applications
Ignition Modules
Normally-On Switches
Solid State Relays
Converters
Telecommunications
Power Supply
Package Pinout
G
D
S
D
(SOT-89)
CPC3703
250V N-Channel
Depletion-Mode FET
Description
The CPC3703 is an N-channel, depletion mode, field
effect transistor (FET) that utilizes IXYS Integrated
Circuits Division’s proprietary third-generation vertical
DMOS process. The third-generation process realizes
world class, high voltage MOSFET performance
in an economical silicon gate process. Our vertical
DMOS process yields a robust device, with high
input impedance, for use in high-power applications.
The CPC3703 is a highly reliable device that has
been used extensively in our Solid State Relays for
industrial and telecommunications applications.
This device excels in power applications that require
low drain-source resistance, particularly in cold
environments such as automotive ignition modules.
The CPC3703 offers a low, 4maximum, on-state
resistance at 25ºC.
The CPC3703 has a minimum breakdown voltage of
250V, and is available in an SOT-89 package. As with
all MOS devices, the FET structure prevents thermal
runaway and thermal-induced secondary breakdown.
Ordering Information
Part #
CPC3703CTR
Description
N-Channel Depletion Mode FET, SOT-89 Pkg.
Tape and Reel (1000/Reel)
Circuit Symbol
G
D
S
DS-CPC3703-R07
www.ixysic.com
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