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Datasheet CPC3703 PDF ( 特性, スペック, ピン接続図 )

部品番号 CPC3703
部品説明 250V N-Channel Depletion-Mode FET
メーカ IXYS
ロゴ IXYS ロゴ 
プレビュー
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CPC3703 Datasheet, CPC3703 PDF,ピン配置, 機能
INTEGRATED CIRCUITS DIVISION
V(BR)DSX /
V(BR)DGX
250V
RDS(on)
(max)
4
IDSS (min)
360mA
Package
SOT-89
Features
High Breakdown Voltage: 250V
Low On-Resistance: 4max. at 25ºC
Low VGS(off) Voltage: -1.6 to -3.9V
Depletion Mode Device Offers Low RDS(on)
at Cold Temperatures
High Input Impedance
Small Package Size: SOT-89
Applications
Ignition Modules
Normally-On Switches
Solid State Relays
Converters
Telecommunications
Power Supply
Package Pinout
G
D
S
D
(SOT-89)
CPC3703
250V N-Channel
Depletion-Mode FET
Description
The CPC3703 is an N-channel, depletion mode, field
effect transistor (FET) that utilizes IXYS Integrated
Circuits Division’s proprietary third-generation vertical
DMOS process. The third-generation process realizes
world class, high voltage MOSFET performance
in an economical silicon gate process. Our vertical
DMOS process yields a robust device, with high
input impedance, for use in high-power applications.
The CPC3703 is a highly reliable device that has
been used extensively in our Solid State Relays for
industrial and telecommunications applications.
This device excels in power applications that require
low drain-source resistance, particularly in cold
environments such as automotive ignition modules.
The CPC3703 offers a low, 4maximum, on-state
resistance at 25ºC.
The CPC3703 has a minimum breakdown voltage of
250V, and is available in an SOT-89 package. As with
all MOS devices, the FET structure prevents thermal
runaway and thermal-induced secondary breakdown.
Ordering Information
Part #
CPC3703CTR
Description
N-Channel Depletion Mode FET, SOT-89 Pkg.
Tape and Reel (1000/Reel)
Circuit Symbol
G
D
S
DS-CPC3703-R07
www.ixysic.com
1

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CPC3703 pdf, ピン配列
INTEGRATED CIRCUITS DIVISION
CPC3703
1000
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0
0
PERFORMANCE DATA (@25ºC Unless Otherwise Noted)*
Output Characteristics
VGS=-1.0
V =-1.5
GS
VGS=-2.0
VGS=-2.5
123456
VDS (V)
Instantaneous Transfer Characteristics
(VDS=5V, TA=TJ)
350
300
250
200
+125ºC
150 +25ºC
100
-55ºC
50
0
-3.5
-3.0 -2.5 -2.0
VGS (V)
-1.5
RDS(on) Vs. Temperature
(VGS=0V, ID=200mA)
8
7
6
5
4
3
2
1
-50
0 50 100
Temperature (ºC)
150
-2.0
-2.5
-3.0
-3.5
-4.0
-50
VGS(off) Vs. Temperature
(VDS=10V, ID=1mA)
0 50 100
Temperature (ºC)
Maximum Rated Safe Operating Area
1
0.1
0.01
0.001
150 0.1
1 10 100 1000
VDS (V)
Transconductance vs. Drain Current
(VDS=10V, TA=TJ)
300
-55ºC
250 +25ºC
+125ºC
200
150
100
50
0
0 10 20 30 40 50 60 70 80 90 100
ID (mA)
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0
Power Dissipation
vs. Ambient Temperature
20 40 60 80 100 120 140
Temperature (ºC)
Capacitance vs. Drain-Source Voltage
(VGS=-5V)
600
525
450
CISS
375
300
225
150
75
COSS
CRSS
0
0 10 20 30 40
VDS (V)
On-Resistance vs. Drain Current
(VGS=0V)
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
ID (A)
*The Performance data shown in the graphs above is typical of device performance. For guaranteed parameters not indicated in the written specifications, please
contact our application department.
R07 www.ixysic.com
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