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Datasheet CPC3703 PDF ( 特性, スペック, ピン接続図 )

部品番号 CPC3703
部品説明 N-Channel Depletion-Mode Vertical DMOS FETs
メーカ Clare
ロゴ Clare ロゴ 
プレビュー
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CPC3703 Datasheet, CPC3703 PDF,ピン配置, 機能
BVDSX/
BVDGX
250V
RDS(ON)
(max)
4Ω
IDSS (min)
360mA
Package
SOT-89
Features
Depletion mode device offers low RDS(ON) at cold
temperatures
Low on resistance 4 ohms max. at 25ºC
High input impedance
High breakdown voltage 250V
Low VGS(off) voltage -1.6 to -3.9V
Small package size SOT89
Applications
Ignition Modules
Normally-on Switches
Solid State Relays
Converters
Telecommunications
Power Supply
Package Pinout
G
D
S
D
(SOT89)
CPC3703
N-Channel Depletion-Mode
Vertical DMOS FETs
Description
The CPC3703 is an N-channel, depletion mode, field
effect transistor (FET) that utilizes Clare’s proprietary
third-generation vertical DMOS process. The
third-generation process realizes world class, high
voltage MOSFET performance in an economical
silicon gate process. Our vertical DMOS process
yields a robust device, with high input impedance,
for use in high-power applications. The CPC3703
is a highly reliable FET device that has been used
extensively in Clare’s Solid State Relays for industrial
and telecommunications applications.
This device excels in power applications that require
low drain-source resistance, particularly in cold
environments such as automotive ignition modules.
The CPC3703 offers a low, 4Ω maximum, on-state
resistance at 25ºC.
The CPC3703 has a minimum breakdown voltage of
250V, and is available in an SOT89 package. As with
all MOS devices, the FET structure prevents thermal
runaway and thermal-induced secondary breakdown.
Ordering Information
Part #
CPC3703C
CPC3703CTR
Description
SOT89 (100/Tube)
SOT89 (2000/Reel)
Circuit Symbol
D
G
S
Pb
RoHS
2002/95/EC
DS-CPC3703-R03
e3
www.clare.com
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CPC3703 pdf, ピン配列
CPC3703
1000
900
800
700
600
500
400
300
200
100
0
0
Output Characteristics
(T =25ºC)
A
VGS=-1.0
VGS=-1.5
VGS=-2.0
VGS=-2.5
123456
VDS (V)
PERFORMANCE DATA*
350
300
250
200
150
100
50
0
-3.5
Transfer Characteristics
(VDS=5V)
+125ºC
+25ºC
-55ºC
-3.0 -2.5 -2.0
V (V)
GS
-1.5
VGS(OFF) & RON Vs. Temperature
5.5
5.0
VDS=10V
ID=1mA
4.5
V =0V
GS
ID=200mA
4.0
R
ON
8
7
6
5
3.5 4
3.0 3
VGS(OFF)
2.5 2
0
-50
-0 50 100
Temperature (ºC)
1
150
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0
Power Dissipation vs.
Ambient Temperature
20 40 60 80 100 120
Temperature (ºC)
140
Transconductance vs. Drain Current
(VDS=10V)
300
-55ºC
250 +25ºC
+125ºC
200
150
100
50
0
0 10 20 30 40 50 60 70 80 90 100
ID (mA)
Maximum Rated Safe Operating Area
at 25ºC
1.0
0.1
0.001
0.0001
0
10 100
VDS (V)
1000
Capacitance vs. Drain Source Voltage
(VGS=-5V)
600
525
450
VISS
375
300
225
150
75
VOSS
VRSS
0
0 10 20 30 40
V (V)
DS
On-Resistance vs. Drain Current
(VGS=0V)
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
ID (A)
*The Performance data shown in the graphs above is typical of device performance. For guaranteed parameters not indicated in the written specifications, please
contact our application department.
R03 www.clare.com
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