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Datasheet CPC3703C PDF ( 特性, スペック, ピン接続図 )

部品番号 CPC3703C
部品説明 N-Channel Depletion-Mode Vertical DMOS FETs
メーカ Clare
ロゴ Clare ロゴ 
プレビュー
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CPC3703C Datasheet, CPC3703C PDF,ピン配置, 機能
CPC3703C
N-Channel Depletion-Mode
Vertical DMOS FETs
BVDSX/
BVDGX
250V
RDS(ON)
(max)
4.0
IDSS
(min)
300mA
Package
SOT-89
Features
Depletion mode device offers low RDS(ON) at cold
temperatures
Low on resistance 4 ohms max. at 25oC
High input impedance
High breakdown voltage 250V
Low VGS(off) voltage -1.6 to -3.9V
Small package size SOT-89
Applications
Ignition modules
Normally-on switches
Solid state relays
Converters
Telecommunications
Power supply
Description
The CPC3703C is an N-channel depletion mode field
effect transistor (FET) that utilizes Clare’s proprietary
third generation vertical DMOS process. Third
generation process realizes world class, high voltage
MOSFET performance in an economical silicon gate
process. Our vertical DMOS process yields a robust
device for high power applications with high input
impedance. The CPC3703C is a highly reliable FET
device that has been used extensively in Clare’s solid
state relays for industrial and telecommunications
applications.
This device excels in power applications requiring
low drain-source resistance, particularly in cold
environments such as automotive ignition modules.
The CPC3703C offers a low 4 ohm maximum
on-state resistance at 25oC.
The CPC3703C has a minimum breakdown voltage
of 250V and is available in an SOT-89 package. As
with all MOS devices, the FET structure prevents
thermal runaway and thermal-induced secondary
breakdown.
Package Pinout
G
D
S
D
(SOT-89)
Ordering Information
Part #
CPC3703C
CPC3703CTR
Description
SOT-89 (100/Tube)
SOT-89 (2000/Reel)
Switching Waveforms and Test Circuit
0V
INPUT
-10V
10%
VDD
OUTPUT
0V
t(ON)
td(ON)
tr
10%
90%
90%
t(OFF)
td(OFF)
tF
10%
90%
PULSE
GENERATOR
Rgen
INPUT
DS-CPC3703C-R02.3
www.clare.com
VDD
RL
OUTPUT
D.U.T.
1

1 Page



CPC3703C pdf, ピン配列
CPC3703C
1000
900
800
700
600
500
400
300
200
100
0
0
CPC3703C
Output Characteristics
VGS=-1.0
VGS=-1.5V
VGS=-2.0
VGS=-2.5
123456
VDS (V)
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0
CPC3703C
Power Dissipation vs.
Ambient Temperature
20 40 60 80 100 120
140
PERFORMANCE DATA*
CPC3703C
Transfer Characteristics
350
VDS=5V
300
250
200
150
100
50
0
-3.5
-3.0 -2.5 -2.0
VGS (V)
-1.5
CPC3703C
Transconductance Vs. Drain Current
300
VDS=10V
250
200
150
100
50
0
0 10 20 30 40 50 60 70 80 90 100
ID (mA)
CPC3703C
VGS(off) & Ron Vs. Temperature
5.5
VDS=10V
5.0 ID=1mA
4.5
VGS=0V
ID=200mA
4.0
Ron
3.5
8
7
6
5
4
3.0 3
VGS(off)
2.5 2
01
-50 -0 50 100 150
1.0
0.1
0.001
0.0001
0
10 100
VDS (V)
1000
CPC3703C
Capacitance vs. Drain Source Voltage
600
VGS=-5V
525
450
375 VISS
300
225
150
75 VOSS
0 VRSS
0 10 20 30 40
VDS (V)
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
0
CPC3703C
On Resistance vs. Drain Current
.1 .2 .3 .4 .5 .6 .7 .8 .9 1.0
ID (A)
*The Performance data shown in the graphs above is typical of device performance. For guaranteed parameters not indicated in the written specifications, please contact our application
department.
R02.3 www.clare.com
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