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PDF IXTI12N50P Data sheet ( Hoja de datos )
| Número de pieza | IXTI12N50P | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | IXYS | |
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PolarTM Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
IXTA12N50P
IXTI12N50P
IXTP12N50P
VDSS =
ID25 =
≤RDS(on)
500V
12A
500mΩ
TO-263 (IXTA)
Symbol
VDSS
VDGR
VGSS
VGSM
ID25
IDM
IA
EAS
dV/dt
PD
TJ
TJM
Tstg
TL
TSOLD
Md
Md
Weight
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C, RGS = 1MΩ
Continuous
Transient
TC = 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
TC = 25°C
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C
TC = 25°C
1.6mm (0.062) from case for 10s
Plastic body for 10s
Mounting torque
Mounting force
(TO-220)
(TO-263)
TO-263
Leaded TO-263
TO-220
Maximum Ratings
500
500
V
V
±30 V
±40 V
12 A
30 A
12 A
600 mJ
10 V/ns
200 W
-55 ... +150
150
-55 ... +150
300
260
1.13 / 10
10..65 / 2.2..14.6
2.5
2.8
3.0
°C
°C
°C
°C
°C
Nm/lb.in.
N/lb.
g
g
g
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
BVDSS
VGS = 0V, ID = 250μA
VGS(th)
VDS = VGS, ID = 250μA
IGSS VGS = ±30V, VDS = 0V
IDSS
VDS = VDSS
VGS = 0V
TJ = 125°C
RDS(on)
VGS = 10V, ID = 0.5 • ID25, Note 1
Characteristic Values
Min. Typ. Max.
500 V
3.0 5.5 V
±100 nA
5 μA
250 μA
500 mΩ
GS
(TAB)
Leaded TO-263 (IXTI)
G
D
S
TO-220 (IXTP)
(TAB)
G DS
(TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
Features
z International standard packages
z Unclamped Inductive Switching (UIS)
rated
z Low package inductance
easy to drive and to protect
Advantages
z Easy to mount
z Space savings
z High power density
© 2008 IXYS CORPORATION, All rights reserved
DS99322F(04/08)
1 page  
IXTA12N50P IXTI12N50P
IXTP12N50P
Fig. 13. Maximum Transient Thermal Impedance
1.00
0.10
0.01
0.01
0.1 1 10 100 1000
Pulse Width - milliseconds
© 2008 IXYS CORPORATION, All rights reserved
IXYS REF: T_12N50P (4J) 04-14-08-D
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet IXTI12N50P.PDF ] | |
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