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PDF SS8050 Data sheet ( Hoja de datos )
| Número de pieza | SS8050 | |
| Descripción | NPN EPITAXIAL SILICON TRANSISTOR | |
| Fabricantes | Samsung | |
| Logotipo |  |
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 1. 25V, 1500mA, 1W, NPN Transistor  Hay una vista previa y un enlace de descarga de SS8050 (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
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SS8050
NPN EPITAXIAL SILICON TRANSISTOR
2W OUTPUT AMPLIFIER OF PORTABLE
RADIOS IN CLASS
B PUSH-PULL OPERATION.
• Complimentary to SS8550
Ε Collector Current IC=1.5A
• Collector Dissipation:PC=2W (TC=25 )
ÎABSOLUTE MAXIMUM RATINGS (TA=25 )
Characteristic
Symbol
Rating
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature
VCBO
VCEO
VEBO
IC
PC
TJ
TSTG
1. Emitter 2. Base 3. Collector
40
25
6
1.5
1
150
-65 ~ 150
Unit
V
V
V
A
WÎÎ
TO-92
ÎELECTRICAL CHARACTERISTICS (TA=25 )
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter Voltage
Output Capacitance
Current Gain-Bandwidth Product
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
hFE1
hFE2
hFE3
VCE (sat)
VBE (sat)
VBE
COB
fT
Test Conditions
ÀIC=100 , IE=0
ÀIC=2mA, IB=0
IE=100 , IC=0
VCB=35V, IE=0
VEB=6V, IC=0
VCE=1V, IC=5mA
VCE=1V, IC=100mA
VCE=1V, IC=800mA
IC=800mA, IB=80mA
IC=800mA, IB=80mA
VCE=1V, IC=10mA
VCB=10V, IE=0
f=1MHz
VCE=10V, IC=50mA
hFE(2) CLASSIFICATION
Classification
B
hFE(2)
85-160
C
120-200
D
160-300
Min
40
25
6
45
85
40
100
Typ
135
160
110
0.28
0.98
0.66
9.0
190
Max
100
100
300
0.5
1.2
1
Unit
V
V
V
nA
nA
V
V
V
pF
MHz
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet SS8050.PDF ] | |
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