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BU52001GUL の電気的特性と機能

BU52001GULのメーカーはROHM Semiconductorです、この部品の機能は「Omnipolar Detection Hall ICs」です。


製品の詳細 ( Datasheet PDF )

部品番号 BU52001GUL
部品説明 Omnipolar Detection Hall ICs
メーカ ROHM Semiconductor
ロゴ ROHM Semiconductor ロゴ 




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BU52001GUL Datasheet, BU52001GUL PDF,ピン配置, 機能
Hall ICs
Omnipolar Detection Hall ICs
BU52001GUL,BU52011HFV,BU52021HFV,BU52015GUL,BU52025G,BU52053NVX,
BU52054GWZ,BU52055GWZ,BU52056NVX,BU52061NVX,BD7411G
No.10045EGT02
Description
The omnipolar Hall ICs are magnetic switches that can operate both S-and N-pole, upon which the output goes from Hi to
Low. In addition to regular single-output Hall ICs, We offer a lineup of dual-output units with a reverse output terminal (active
High).
Features
1) Omnipolar detection
2) Micro power operation (small current using intermittent operation method)(BD7411G is excluded.)
3) Ultra-compact and thin wafer level CSP4 package (BU52054GWZ, BU52055GWZ)
4) Ultra-compact wafer level CSP4 package (BU52015GUL, BU52001GUL)
5) Ultra-Small outline package SSON004X1216 (BU52061NVX, BU52053NVX, BU52056NVX)
6) Ultra-Small outline package HVSOF5 (BU52011HFV, BU52021HFV)
7) Small outline package (BU52025G, BD7411G)
8) Line up of supply voltage
For 1.8V Power supply voltage (BU52054GWZ, BU52055GWZ, BU52015GUL, BU52061NVX, BU52053NVX,
BU52056NVX, BU52011HFV)
For 3.0V Power supply voltage (BU52001GUL)
For 3.3V Power supply voltage (BU52021HFV, BU52025G)
For 5.0V Power supply voltage (BD7411G)
9) Dual output type (BU52015GUL)
10) High ESD resistance 8kV (HBM) (6kV for BU52056NVX)
Applications
Mobile phones, notebook computers, digital video camera, digital still camera, white goods etc.
Lineup matrix
Product name
BU52054GWZ
Supply
voltage
(V)
1.653.60
Operate
point
(mT)
+/-6.3
Hysteresis
(mT)
0.9
Period
(ms)
50
Supply current
(AVG)
(A)
5.0µ
Output
type
CMOS
Package
UCSP35L1
BU52055GWZ 1.653.60 +/-4.1
0.8
50
5.0µ
CMOS
UCSP35L1
BU52015GUL 1.653.30 +/-3.0
0.9
50
5.0µ
CMOS
VCSP50L1
BU52001GUL 2.403.30 +/-3.7
0.8
50
8.0µ
CMOS
VCSP50L1
BU52061NVX 1.653.60 +/-3.3
0.9
50
4.0µ
CMOS SSON004X1216
BU52053NVX 1.653.60 +/-3.0
0.9
50
5.0µ
CMOS SSON004X1216
BU52056NVX 1.653.60 +/-4.6
0.8
50
5.0µ
CMOS SSON004X1216
BU52011HFV 1.653.30 +/-3.0
0.9
50
5.0µ
CMOS
HVSOF5
BU52021HFV 2.403.60 +/-3.7
0.8
50
8.0µ
CMOS
HVSOF5
BU52025G
2.403.60 +/-3.7
0.8
50
8.0µ
CMOS
SSOP5
BD7411G
4.505.50 +/-3.4
Plus is expressed on the S-pole; minus on the N-pole
0.4
-
2.0m
CMOS
SSOP5
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
1/31
2011.12 - Rev.G

1 Page





BU52001GUL pdf, ピン配列
BU52001GUL,BU52011HFV,BU52021HFV,BU52015GUL,BU52025G,BU52053NVX,
BU52054GWZ,BU52055GWZ,BU52056NVX,BU52061NVX,BD7411G
Technical Note
Magnetic, Electrical characteristics
BU52054GWZ (Unless otherwise specified, VDD=1.80V, Ta=25)
Parameter
Limits
Symbol
Min. Typ.
Max.
Unit
Power Supply Voltage
VDD 1.65 1.80 3.60 V
Operate Point
Release Point
Hysteresis
BopS
BopN
BrpS
BrpN
BhysS
BhysN
- 6.3 7.9
mT
-7.9 -6.3
-
3.5 5.4
-
mT
- -5.4 -3.5
- 0.9 -
mT
- 0.9 -
Period
Tp - 50 100 ms
Conditions
Output High Voltage
Output Low Voltage
VOH VDD-0.2 -
VOL - -
-
V
BrpN<B<BrpS
IOUT =-0.5mA
0.2
V
B<BopN, BopS<B
IOUT =+0.5mA
17
17
Supply Current
IDD(AVG)
-
5
8 µA Average
Supply Current During Startup Time
IDD(EN)
-
2.8
- mA During Startup Time Value
Supply Current During Standby Time
IDD(DIS)
-
1.8
- µA During Standby Time Value
17 B = Magnetic flux density
1mT=10Gauss
Positive (“+”) polarity flux is defined as the magnetic flux from south pole which is direct toward to the branded face of the sensor.
After applying power supply, it takes one cycle of period (TP) to become definite output.
Radiation hardiness is not designed.
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
3/31
2011.12 - Rev.G


3Pages


BU52001GUL 電子部品, 半導体
BU52001GUL,BU52011HFV,BU52021HFV,BU52015GUL,BU52025G,BU52053NVX,
BU52054GWZ,BU52055GWZ,BU52056NVX,BU52061NVX,BD7411G
Technical Note
BU52001GUL (Unless otherwise specified, VDD=3.0V, Ta=25)
Parameter
Limits
Symbol
Min. Typ.
Max.
Unit
Power Supply Voltage
VDD 2.4 3.0 3.3 V
Operate Point
Release Point
Hysteresis
BopS
BopN
BrpS
BrpN
BhysS
BhysN
- 3.7 5.5
mT
-5.5 -3.7
-
0.8 2.9
-
mT
- -2.9 -0.8
- 0.8 -
mT
- 0.8 -
Period
Tp - 50 100 ms
Conditions
Output High Voltage
Output Low Voltage
VOH VDD-0.4 -
VOL - -
-
V
BrpN<B<BrpS
IOUT =-1.0mA
0.4
V
B<BopN,BopS<B
IOUT =+1.0mA
20
20
Supply Current
IDD(AVG)
-
8 12 µA Average
Supply Current During Startup Time
IDD(EN)
-
4.7
- mA During Startup Time Value
Supply Current During Standby Time
IDD(DIS)
-
3.8
- µA During Standby Time Value
20 B = Magnetic flux density
1mT=10Gauss
Positive (“+”) polarity flux is defined as the magnetic flux from south pole which is direct toward to the branded face of the sensor.
After applying power supply, it takes one cycle of period (TP) to become definite output.
Radiation hardiness is not designed.
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
6/31
2011.12 - Rev.G

6 Page



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共有リンク

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部品番号部品説明メーカ
BU52001GUL

Hall effect Switch

ROHM Semiconductor
ROHM Semiconductor
BU52001GUL

Omnipolar Detection Hall ICs

ROHM Semiconductor
ROHM Semiconductor


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