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Datasheet 2N688 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | 2N688 | SILICON CONTROLLED RECTIFIER 2N681-2N692, 2N5204-2N5207
High-reliability discrete products and engineering services since 1977
SILICON CONTROLLED RECTIFIER
FEATURES Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number. Available as non-RoHS (Sn/Pb p |  Digitron Semiconductors | rectifier |
| 2 | 2N688 | SILICON CONTROLLED RECTIFIER 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824
OUTSTANDING SUPPORT AND SUPERIOR SERVICES
PRODUCT SUPPORT
Central’s operations team provides the highest level of support to insure product is delivered on-time.
• Supply management (Customer portals)
• |  Central Semiconductor | rectifier |
| 3 | 2N688 | 25 and 35 Amp RMS SCRs |  Knox Semiconductor Inc | data |
| 4 | 2N688 | 25 and 35 Amp RMS SCRs |  International Rectifier | data |
| 5 | 2N688 | Thyristor SCR 400V 200A 3-Pin TO-48 Box |  New Jersey Semiconductor | thyristor |
2N6 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | 2N60 | N-CHANNEL MOSFET
UNISONIC TECHNOLOGIES CO., LTD 2N60
2 Amps, 600 Volts N-CHANNEL MOSFET
DESCRIPTION
The UTC 2N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche charact  Unisonic Technologies mosfet | | |
| 2 | 2N60-E | N-CHANNEL POWER MOSFET UNISONIC TECHNOLOGIES CO., LTD
2N60-E
2A, 600V N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 2N60-E is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. Unisonic Technologies mosfet | | |
| 3 | 2N6008 | Series 2N Transistors Sprague transistor | | |
| 4 | 2N6009 | Series 2N Transistors Sprague transistor | | |
| 5 | 2N6010 | Silicon Transistors Semiconductor transistor | | |
| 6 | 2N6027 | SILICON PROGRAMMABLE UNIJUNCTION TRANSISTORS 2N6027 2N6028
SILICON PROGRAMMABLE UNIJUNCTION TRANSISTORS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6027 and 2N6028 devices are silicon programmable unijunction transistors, manufactured in an epoxy molded package, designed for adjustable (programmable) characte Central Semiconductor transistor | | |
| 7 | 2N6027 | Programmable Unijunction Transistor 2N6027, 2N6028
Preferred Device
Programmable Unijunction Transistor
Programmable Unijunction Transistor Triggers
Designed to enable the engineer to “program’’ unijunction characteristics such as RBB, h, IV, and IP by merely selecting two resistor values. Application includes thyristor−trigge  ON Semiconductor transistor | |
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