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2N687 の電気的特性と機能

2N687のメーカーはMicrosemiです、この部品の機能は「Power Triode Thyristors」です。


製品の詳細 ( Datasheet PDF )

部品番号 2N687
部品説明 Power Triode Thyristors
メーカ Microsemi
ロゴ Microsemi ロゴ 




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2N687 Datasheet, 2N687 PDF,ピン配置, 機能
2N682, 2N683, and 2N685 – 2N692
Available on
commercial
versions
PNPN Silicon, Reverse-Blocking,
Power Triode Thyristors
Qualified per MIL-PRF-19500/108
DESCRIPTION
This silicon controlled rectifier device is military qualified up to a JANTX level for high-reliability
applications.
Qualified Levels:
JAN and JANTX
Important: For the latest information, visit our website http://www.microsemi.com.
FEATURES
JEDEC registered 2N682, 2N683, 2N685, and 2N687 – 2N692.
JAN and JANTX qualifications are available per MIL-PRF-19500/108.
RoHS compliant versions available (commercial grade only).
APPLICATIONS / BENEFITS
A general purpose, reverse-blocking thyristor.
TO-208 / TO-48
Package
MAXIMUM RATINGS
Parameters/Test Conditions
Junction Temperature
Storage Temperature
Gate Voltage (Peak Total Value)
Maximum Average DC Output Current (1)
Non-repetitive Peak On-State Current (2) @ t = 7 ms
Symbol
TJ
T STG
V GM
IO
I TSM
Value
-65 to +125
-65 to +150
5
16
150
Unit
oC
oC
V(pk)
A
A
Notes:
1. This average forward current is for a maximum case temperature of +65 °C, and 180 electrical degrees
of conduction.
2. Surge rating is non-recurrent and applies only with device in the conducting state. The peak rate of surge
current must not exceed 100 amperes during the first 10 μs after switching from the off (blocking) state
to the on (conducting) state. This time is measured from the point where the thyristor voltage has
decayed to 90 percent of its initial blocking value.
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
Tel: 1-800-446-1158 or
(978) 620-2600
Fax: (978) 689-0803
MSC – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
T4-LDS-0249, Rev. 2 (4/25/13)
©2013 Microsemi Corporation
Page 1 of 6

1 Page





2N687 pdf, ピン配列
2N682, 2N683, and 2N685 – 2N692
ELECTRICAL CHARACTERISTICS
Parameters / Test Conditions
Repetitive Peak Reverse Voltage
and
Repetitive Peak Off-State Voltage
2N682
2N683
2N685
2N686
2N687
2N688
2N689
2N690
2N691
2N692
(1) Values applicable to zero or negative gate voltage (VGM).
Symbol
V RRM (1)
and
V DRM
Min.
Max.
50
100
200
250
300
400
500
600
700
800
Unit
V (pk)
Parameters / Test Conditions
Holding current:
Bias condition D; VAA = 24 V maximum;
ITM = IF1 = 1 A
IT = IF2 = 100 mA
trigger voltage source = 10 V
trigger PW = 100 μs (minimum)
R2 = 20 Ω
Reverse blocking current
AC method, bias condition D;
f = 60 Hz, VRRM = rated
Forward blocking current
AC method, bias condition D;
f = 60 Hz; VDRM = rated
Gate trigger voltage and current
V2 = VD = 6 V; RL = 50 Ω;
Re = 20 Ω maximum
Forward on voltage
ITM = 50 A(pk) (pulse);
pulse width = 8.5 ms; maximum;
duty cycle = 2 percent maximum
Reverse gate current
VG = 5 V
Symbol Min.
Max.
Unit
IH 50 mA
I RRM1
I DRM1
V GT1
I GT1
V TM
IG
2 mA (pk)
2 mA (pk)
3V
35 mA
2 V (pk)
250 mA
T4-LDS-0249, Rev. 2 (4/25/13)
©2013 Microsemi Corporation
Page 3 of 6


3Pages


2N687 電子部品, 半導体
2N682, 2N683, and 2N685 – 2N692
PACKAGE DIMENSIONS
NOTES:
1. Dimensions are in inches. Millimeters are given for information only.
2. Device contour, except on hex head and noted terminal dimensions, is
optional within zone defined by CD and OAH, CD not to exceed actual
HF.
3. Contour and angular orientation of terminals 1 and 2 with respect to
hex portion and to each other are optional.
4. Chamfer or undercut on one or both ends of the hexagonal portion are
optional.
5. Square or radius on end of terminal is optional.
6. Minimum difference in terminal lengths to establish datum line for
numbering terminals.
7. Dimension SD is pitch diameter of coated threads.
8. In accordance with ASME Y14.5M, diameters are equivalent to Φx
symbology.
Ltr
b
b1
CD
CH
e2
HF
HT
OAH
S
SD
SL
SU
ΦT
ΦT1
UD
Dimensions
Inches
Millimeters
Min Max Min Max
0.115 0.139 2.92 3.53
0.210 0.300 5.33 7.62
- 0.543 - 13.8
- 0.550 - 14.00
0.125 - 3.17 -
0.544 0.563 13.8 14.3
0.075 0.200 1.9 5.08
- 1.193 - 30.3
0.120 - 3.05 -
¼ - 28 UNF 2A
0.422 0.453 10.7 11.5
- 0.090 - 2.29
0.125 0.165 3.17 4.19
0.060 0.075 1.52 1.9
0.220 0.249 5.59 6.32
Notes
3
3
2
6
4
2
3
Terminal 1
Terminal 2
Terminal 3
Gate
Cathode
Anode (Stud)
5
7
T4-LDS-0249, Rev. 2 (4/25/13)
©2013 Microsemi Corporation
Page 6 of 6

6 Page



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