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IN25AA040N PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 IN25AA040N
部品説明 NONVOLATILE ELECTRICALLY ERASABLE PROM
メーカ Integral
ロゴ Integral ロゴ 

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IN25AA040N Datasheet, IN25AA040N PDF,ピン配置, 機能
IN25АА020N, IN25АА020D, IN25АА040N, IN25АА040D
NONVOLATILE ELECTRICALLY ERASABLE PROM WITH SERIAL
PERIPHERAL INTERFACE (SPI).
DESCRIPTION
The IN25АА020N/D are a 2K(256x8) serial Electrically Erasable PROM with SPI interface.
*The IN25АА040N/D are a 4K (512x8) serial Electrically Erasable PROM with SPI interface (SPI).
The ICs is purposed for reading, writing & nonvolatile data storage in electronic units with SPI interface. ICs
are realized in SO-8 (MS-012АA) and DIP-8 (MS-001BA)
FEATURES
- Data capacity, QINF:
for IN25АА020N, IN25АА020D
for IN25АА040N, IN25АА040D
2048 bit,
4096 bit;
- Maximum clock frequency, fC:
for 4,5 V UCC 5,5 V
for 2,5 V UCC 5,5 V
for 1,8 V UCC 5,5 V
- Maximum stand-by current, ICC:
for UCC = 5,5 V, UIL = 0 V, UIH = UCC
for UCC = 2,5 V, UIL = 0 V, UIH = UCC
3 MHz;
2 MHz;
1 MHz;
5,0 uA
1,0 uA;
- Maximum read current, IOCCR :
for UCC = 5,5 В, fC = 3,0 МГц, SO pin is not loaded .…1,0 mA,
for UCC = 2,5 В, fC = 2,0 МГц, SO pin is not loaded …..0,5 mA;
- Maximum write current, IOCCW :
for UCC = 5,5 V
5,0 mA;
for UCC = 2,5 V
3,0 mA;
- Byte & page (16 bytes) data write modes are available;
- Endurance NE/W, …...1000000 cycles;
- Write protection block protect none, 1/4, 1/2, or all of storage
array;
- Power on/off data protection circuitry;
- Supply voltage UCC 1,8 … 5,5 V;
- Temperature range -40 … +85°C.
- 100 years non-volatile data retention time
N SUFFIX
DIP
8
1 D SUFFIX
8 SOIC
1
Pin
Name
CS
SO
WP
GND
SI
SCK
HOLD
VCC
Function
Chip Select
Serial Data Output
Write protection
Ground
Serial Data Input
Clock Input
Hold input *
Power Supply
PIN FUNCTIONS
CS 01
SO 02
WP 03
GND 04
08 Vcc
07 HOLD
06 SCK
05 SI
Ver.00/11.07.2008
1 IN25AA020(040)-TSe.doc
1711616

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