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IRF7341QPbFのメーカーはInternational Rectifierです、この部品の機能は「Power MOSFET ( Transistor )」です。 |
部品番号 | IRF7341QPbF |
| |
部品説明 | Power MOSFET ( Transistor ) | ||
メーカ | International Rectifier | ||
ロゴ | |||
このページの下部にプレビューとIRF7341QPbFダウンロード(pdfファイル)リンクがあります。 Total 9 pages
Benefits
• Advanced Process Technology
• ÿDual N-Channel MOSFET
• ÿUltra Low On-Resistance
• ÿ175°C Operating Temperature
• ÿRepetitive Avalanche Allowed up to Tjmax
• ÿLead-Free
Description
These HEXFET ® Power MOSFET’s in a Dual SO-8 package
utilize the lastest processing techniques to achieve extremely
low on-resistance per silicon area. Additional features of
these HEXFET Power MOSFET’s are a 175°C junction
operating temperature, fast switching speed and improved
repetitive avalanche rating. These benefits combine to make
this design an extremely efficient and reliable device for use
in a wide variety of applications.
The 175°C rating for the SO-8 package provides improved
thermal performance with increased safe operating area and
dual MOSFET die capability make it ideal in a variety of power
applications. This dual, surface mount SO-8 can dramatically
reduce board space and is also available in Tape & Reel.
PD - 96108A
IRF7341QPbF
HEXFET® Power MOSFET
VDSS
55V
RDS(on) max
0.050@VGS = 10V
0.065@VGS = 4.5V
ID
5.1A
4.42A
S1 1
G1 2
S2 3
G2 4
8 D1
7 D1
6 D2
5 D2
Top View
SO-8
Absolute Maximum Ratings
Parameter
VDS
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
Drain-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
TJ , TSTG
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Junction and Storage Temperature Range
Thermal Resistance
Parameter
Max.
RθJA
Maximum Junction-to-Ambient
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Max.
55
5.1
4.2
42
2.4
1.7
16
± 20
140
5.1
See Fig. 14, 15, 16
-55 to + 175
Units
62.5
Units
V
A
W
W
mW/°C
V
mJ
A
mJ
°C
°C/W
1
08/03/10
1 Page IRF7341QPbF
100 VGS 100
TOP
15.0V
10.0V
7.0V
5.5V
4.5V
10
4.0V
3.5V
10
BOTTOM 2.7V
2.7V
11
2.7V
VGS
TOP
15.0V
10.0V
7.0V
5.5V
4.5V
4.0V
3.5V
BOTTOM 2.7V
0.1
0.1
20µs PULSE WIDTH
Tj = 25°C
1 10
VDS, Drain-to-Source Voltage (V)
100
Fig 1. Typical Output Characteristics
0.1
0.1
20µs PULSE WIDTH
Tj = 175°C
1 10
VDS, Drain-to-Source Voltage (V)
100
Fig 2. Typical Output Characteristics
100
TJ = 25° C
TJ = 175° C
10
V DS = 25V
20µs PULSE WIDTH
1
2.0 3.0 4.0 5.0 6.0 7.0
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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2.5 ID = 5.2A
2.0
1.5
1.0
0.5
0.0 VGS = 10V
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
TJ, Junction Temperature ( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3
3Pages IRF7341QPbF
0.070
0.100
0.060
0.050
0.040
0.030
ID = 7.1A
0.020
2.0
4.0 6.0 8.0 10.0 12.0 14.0
VGS, Gate -to -Source Voltage (V)
16.0
Fig 11. Typical On-Resistance Vs.
Gate Voltage
10 V
QGS
VG
QG
QGD
0.080
0.060
0.040
0.020
0
VGS = 4.5V
VGS = 10V
10 20 30 40 50
ID , Drain Current ( A )
60
Fig 12. Typical On-Resistance Vs.
Drain Current
400
ID
TOP
2.1A
4.3A
320
BOTTOM
5.1A
Charge
Fig 13a. Basic Gate Charge Waveform
Current Regulator
Same Type as D.U.T.
50KΩ
12V .2µF
.3µF
D.U.T.
+
-VDS
VGS
3mA
IG ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
6
240
160
80
0
25 50 75 100 125 150
Starting Tj, Junction Temperature
( °C)
175
Fig 14. Maximum Avalanche Energy
Vs. Drain Current
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6 Page | |||
ページ | 合計 : 9 ページ | ||
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部品番号 | 部品説明 | メーカ |
IRF7341QPbF | Power MOSFET ( Transistor ) | International Rectifier |