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IRF7316QPBF の電気的特性と機能

IRF7316QPBFのメーカーはInternational Rectifierです、この部品の機能は「Power MOSFET ( Transistor )」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRF7316QPBF
部品説明 Power MOSFET ( Transistor )
メーカ International Rectifier
ロゴ International Rectifier ロゴ 




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IRF7316QPBF Datasheet, IRF7316QPBF PDF,ピン配置, 機能
l Advanced Process Technology
l Ultra Low On-Resistance
l Dual P- Channel MOSFET
l Surface Mount
l Available in Tape & Reel
l 150°C Operating Temperature
l Lead-Free
Description
These HEXFET® Power MOSFET's in a Dual
SO-8 package utilize the lastest processing
techniques to achieve extremely low on-
resistance per silicon area. Additional features
of these HEXFET Power MOSFET's are a 150°C
junction operating temperature, fast switching
speed and improved repetitive avalanche rating.
These benefits combine to make this design an
extremely efficient and reliable device for use in
a wide variety of applications.
The efficient SO-8 package provides enhanced
thermal characteristics and dual MOSFET die
capability making it ideal in a variety of power
applications. This dual, surface mount SO-8
can dramatically reduce board space and is also
available in Tape & Reel.
PD - 96126A
IRF7316QPbF
HEXFET® Power MOSFET
S1 1
G1 2
8 D1
7 D1
VDSS = -30V
S2 3
6 D2
G2 4
5 D2 RDS(on) = 0.058
Top View
SO-8
Absolute Maximum Ratings ( TA = 25°C Unless Otherwise Noted)
Symbol
Maximum
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current…
Pulsed Drain Current
TA = 25°C
TA = 70°C
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation …
Single Pulse Avalanche Energy
TA = 25°C
TA = 70°C
VDS
VGS
ID
IDM
IS
PD
EAS
-30
± 20
-4.9
-3.9
-30
-2.5
2.0
1.3
140
Avalanche Current
IAR -2.8
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt ƒ
EAR
dv/dt
0.20
-5.0
Junction and Storage Temperature Range
TJ, TSTG
-55 to + 150
Units
V
A
W
mJ
A
mJ
V/ ns
°C
Thermal Resistance Ratings
Parameter
Maximum Junction-to-Ambient…
www.irf.com
Symbol
RθJA
Limit
62.5
Units
°C/W
1
08/02/10

1 Page





IRF7316QPBF pdf, ピン配列
100 VGS
TOP
- 15V
- 10V
- 7.0V
- 5.5V
- 4.5V
- 4.0V
- 3.5V
BOTTOM - 3.0V
10
-3.0V
20µs PULSE WIDTH
1
TJ = 25°C
A
0.1 1 10
-VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
IRF7316QPbF
100 VGS
TOP
- 15V
- 10V
- 7.0V
- 5.5V
- 4.5V
- 4.0V
- 3.5V
BOTTOM - 3.0V
10
-3.0V
20µs PULSE WIDTH
1
TJ = 150°C
A
0.1 1 10
-VDS, Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
100
TJ = 25°C
TJ = 150°C
10
100
TJ = 150°C
10
TJ = 25°C
V DS = -10V
1
3.0
3.5
4.0
20µs PULSE WIDTH
4.5 5.0 5.5 6.0A
-VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
www.irf.com
1 VGS = 0V A
0.4 0.6 0.8 1.0 1.2 1.4
-VSD , Source-to-Drain Voltage (V)
Fig 4. Typical Source-Drain Diode
Forward Voltage
3


3Pages


IRF7316QPBF 電子部品, 半導体
IRF7316QPbF
SO-8 Package Outline
Dimensions are shown in millimeters (inches)
DB
A5
6
E
8765
12 3 4
H
0.25 [.010]
A
6X e
e1
A
C
y
DIM
INCHES
MIN MAX
A .0532 .0688
A1 .0040 .0098
b .013 .020
c .0075 .0098
D .189 .1968
E .1497 .1574
e .050 BASIC
e 1 .025 BASIC
H .2284 .2440
K .0099 .0196
L .016 .050
y 0°
MIL L IME T E R S
MIN MAX
1.35 1.75
0.10 0.25
0.33 0.51
0.19 0.25
4.80 5.00
3.80 4.00
1.27 BASIC
0.635 B ASIC
5.80 6.20
0.25 0.50
0.40 1.27
0° 8°
K x 45°
8X b
A1
0.25 [.010] C A B
0.10 [.004]
NOT ES :
1. DIMENS IONING & TOLERANCING PER ASME Y14.5M-1994.
2. CONT ROLLING DIMENS ION: MILLIMET ER
3. DIMENS IONS ARE SHOWN IN MILLIMETERS [INCHES].
4. OUTLINE CONFORMS TO JEDEC OUTLINE MS -012AA.
5 DIMENS ION DOES NOT INCLUDE MOLD PROT RUSIONS .
MOLD PROTRUS IONS NOT TO EXCEED 0.15 [.006].
6 DIMENS ION DOES NOT INCLUDE MOLD PROT RUSIONS .
MOLD PROTRUS IONS NOT TO EXCEED 0.25 [.010].
7 DIMENS ION IS T HE LENGT H OF LEAD FOR SOLDERING TO
A S UBST RAT E.
8X L 8X c
7
F OOTPRINT
8X 0.72 [.028]
6.46 [.255]
3X 1.27 [.050]
8X 1.78 [.070]
SO-8 Part Marking
EXAMPLE: T HIS IS AN IRF7101 (MOS FET )
INT ERNATIONAL
RECT IFIER
L OGO
XXXX
F 7101
DAT E CODE (YWW)
P = DES IGNATES LEAD-FREE
PRODUCT (OPTIONAL)
Y = LAS T DIGIT OF THE YEAR
WW = WEEK
A = AS S EMBLY S IT E CODE
LOT CODE
PART NUMBER
Notes:
1. For an Automotive Qualified version of this part please seehttp://www.irf.com/product-info/auto/
2. For the most current drawing please refer to IR website at http://www.irf.com/package/
www.irf.com
6

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部品番号部品説明メーカ
IRF7316QPBF

Power MOSFET ( Transistor )

International Rectifier
International Rectifier


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