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IRF7105QPBF の電気的特性と機能

IRF7105QPBFのメーカーはInternational Rectifierです、この部品の機能は「Power MOSFET ( Transistor )」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRF7105QPBF
部品説明 Power MOSFET ( Transistor )
メーカ International Rectifier
ロゴ International Rectifier ロゴ 




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IRF7105QPBF Datasheet, IRF7105QPBF PDF,ピン配置, 機能
END OF LIFE
PD - 96102B
IRF7105QPbF
l Advanced Process Technology
l Ultra Low On-Resistance
l Dual N and P Channel MOSFET
l Surface Mount
l Available in Tape & Reel
l 150°C Operating Temperature
l Lead-Free
S1
G1
S2
G2
Description
These HEXFET® Power MOSFET's in a Dual SO-8 package utilize the
lastest processing techniques to achieve extremely low on-resistance
per silicon area. Additional features of these HEXFET Power
MOSFET's are a 150°C junction operating temperature, fast
switching speed and improved repetitive avalanche rating. These
benefits combine to make this design an extremely efficient and
reliable device for use in a wide variety of applications.
The efficient SO-8 package provides enhanced thermal characteristics
and dual MOSFET die capability making it ideal in a variety of power
applications. This dual, surface mount SO-8 can dramatically reduce
board space and is also available in Tape & Reel.
HEXFET® Power MOSFET
N-CHANNEL MOSFET
18
27
36
45
P-CHANNEL MOSFET
Top View
D1 N-Ch P-Ch
D1
VDSS
D2
D2 RDS(on)
25V -25V
0.10Ω 0.25Ω
ID 3.5A -2.3A
SO-8
Base part number Orderable part number
Package
Type
IRF7105QPbF
IRF7105QTRPbF
IRF7105QPbF
SO-8
SO-8
Standard Pack
Form
Quantity
Tape and Reel 4000
Tube
95
EOL Notice
EOL 527
EOL 529
Replacement Part Number
Please search the EOL part number on IR’s
website for guidance
Absolute Maximum Ratings
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TC = 25°C
VGS
dv/dt
TJ, TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt ‚
Junction and Storage Temperature Range
Thermal Resistance Ratings
RθJA
Parameter
Maximum Junction-to-Ambient „
www.irf.com
Max.
N-Channel
P-Channel
3.5 -2.3
2.8 -1.8
14 -10
2.0
0.016
± 20
3.0 -3.0
-55 to + 150
Units
A
W
W/°C
V
V/nS
°C
Min.
–––
Typ.
–––
Max.
62.5
Units
°C/W
1
05/20/14

1 Page





IRF7105QPBF pdf, ピン配列
END OF LIFE
N-Channel
IRF7105QPbF
VDS , Drain-to-Source Voltage ( V )
Fig 1. Typical Output Characteristics
VDS , Drain-to-Source Voltage ( V )
Fig 2. Typical Output Characteristics
VGS , Gate-to-Source Voltage ( V )
Fig 3. Typical Transfer Characteristics
TJ , Junction Temperature ( °C )
Fig 4. Normalized On-Resistance
Vs. Temperature
VDS , Drain-to-Source Voltage ( V )
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
www.irf.com
QG , Total Gate Charge ( nC )
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
3


3Pages


IRF7105QPBF 電子部品, 半導体
IRF7105QPbF
END OF LIFE
P-Channel
VSD , Source-to-Drain Voltage ( V )
Fig 18. Typical Source-Drain Diode
Forward Voltage
TA , Ambient Temperature ( °C )
Fig 20. Maximum Drain Current Vs.
Ambient Temperature
Current Regulator
Same Type as D.U.T.
50KΩ
12V .2μF
.3μF
D.U.T.
-
+VDS
VGS
-3mA
IG ID
Current Sampling Resistors
Fig 22a. Gate Charge Test Circuit
6
VDS , Drain-to-Source Voltage ( V )
Fig 19. Maximum Safe Operating Area
VDS
RD
VGS
RG
D.U.T.
-
+ VDD
-10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 21a. Switching Time Test Circuit
VDS
90%
10%
VGS
td(on) tr
td(off) tf
Fig 21b. Switching Time Waveforms
-10V
QGS
VG
QG
QGD
Charge
Fig 22b. Basic Gate Charge Waveform
www.irf.com

6 Page



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部品番号部品説明メーカ
IRF7105QPBF

Power MOSFET ( Transistor )

International Rectifier
International Rectifier


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