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QM3004M6 の電気的特性と機能

QM3004M6のメーカーはUBIQです、この部品の機能は「N-Ch 30V Fast Switching MOSFETs」です。


製品の詳細 ( Datasheet PDF )

部品番号 QM3004M6
部品説明 N-Ch 30V Fast Switching MOSFETs
メーカ UBIQ
ロゴ UBIQ ロゴ 




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QM3004M6 Datasheet, QM3004M6 PDF,ピン配置, 機能
General Description
The QM3004M6 is the highest performance
trench N-ch MOSFETs with extreme high cell
density , which provide excellent RDSON and
gate charge for most of the synchronous buck
converter applications .
The QM3004M6 meet the RoHS and Green
Product requirement , 100% EAS guaranteed
with full function reliability approved.
Features
z Advanced high cell density Trench technology
z Super Low Gate Charge
z Excellent CdV/dt effect decline
z 100% EAS Guaranteed
z Green Device Available
QM3004M6
N-Ch 30V Fast Switching MOSFETs
Product Summery
BVDSS
30V
RDSON
8.5mΩ
ID
58A
Applications
z High Frequency Point-of-Load Synchronous
Buck Converter for MB/NB/UMPC/VGA
z Networking DC-DC Power System
z Load Switch
PRPAK5X6 Pin Configuration
D
Absolute Maximum Ratings
SSSG
Symbol
VDS
VGS
ID@TC=25
ID@TC=100
ID@TA=25
ID@TA=70
IDM
EAS
IAS
PD@TC=25
PD@TA=25
TSTG
TJ
Thermal Data
Symbol
RθJA
RθJC
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V1
Continuous Drain Current, VGS @ 10V1
Continuous Drain Current, VGS @ 10V1
Continuous Drain Current, VGS @ 10V1
Pulsed Drain Current2
Single Pulse Avalanche Energy3
Avalanche Current
Total Power Dissipation4
Total Power Dissipation4
Storage Temperature Range
Operating Junction Temperature Range
Parameter
Thermal Resistance Junction-Ambient 1
Thermal Resistance Junction-Case1
Rating
30
±20
58
38
12
9.6
115
130
34
46
2
-55 to 150
-55 to 150
Units
V
V
A
A
A
A
A
mJ
A
W
W
Typ.
---
---
Max.
62
2.7
Unit
/W
/W
Rev A.03 D070411
1

1 Page





QM3004M6 pdf, ピン配列
Typical Characteristics
100
75
VGS=10V
VGS=7V
50 VGS=5V
VGS=4.5V
25 VGS=3V
0
0 0.5 1 1.5 2 2.5
VDS , Drain-to-Source Voltage (V)
Fig.1 Typical Output Characteristics
12
3
10
8
TJ=150TJ=25
6
4
2
0
0 0.3 0.6
VSD , Source-to-Drain Voltage (V)
0.9
Fig.3 Forward Characteristics of reverse
1.8
1.4
1
0.6
0.2
-50
0 50 100
TJ ,Junction Temperature ()
Fig.5 Normalized VGS(th) vs. TJ
150
QM3004M6
N-Ch 30V Fast Switching MOSFETs
Fig.2 On-Resistance vs. Gate-Source
10
ID=15A
8
6 VDS=15V
VDS=24V
4
2
0
0 6 QG , Tot1a2l Gate Ch1a8rge (nC) 24
Fig.4 Gate-Charge Characteristics
1.8
30
1.4
1.0
0.6
0.2
-50
0 50 100
TJ , Junction Temperature ()
Fig.6 Normalized RDSON vs. TJ
3
150


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共有リンク

Link :


部品番号部品説明メーカ
QM3004M3

N-Ch 30V Fast Switching MOSFETs

UBIQ
UBIQ
QM3004M6

N-Ch 30V Fast Switching MOSFETs

UBIQ
UBIQ
QM3004M6

N-Ch 30V Fast Switching MOSFETs

UBIQ
UBIQ


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