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QM3004M6のメーカーはUBIQです、この部品の機能は「N-Ch 30V Fast Switching MOSFETs」です。 |
部品番号 | QM3004M6 |
| |
部品説明 | N-Ch 30V Fast Switching MOSFETs | ||
メーカ | UBIQ | ||
ロゴ | |||
このページの下部にプレビューとQM3004M6ダウンロード(pdfファイル)リンクがあります。 Total 4 pages
General Description
The QM3004M6 is the highest performance
trench N-ch MOSFETs with extreme high cell
density , which provide excellent RDSON and
gate charge for most of the synchronous buck
converter applications .
The QM3004M6 meet the RoHS and Green
Product requirement , 100% EAS guaranteed
with full function reliability approved.
Features
z Advanced high cell density Trench technology
z Super Low Gate Charge
z Excellent CdV/dt effect decline
z 100% EAS Guaranteed
z Green Device Available
QM3004M6
N-Ch 30V Fast Switching MOSFETs
Product Summery
BVDSS
30V
RDSON
8.5mΩ
ID
58A
Applications
z High Frequency Point-of-Load Synchronous
Buck Converter for MB/NB/UMPC/VGA
z Networking DC-DC Power System
z Load Switch
PRPAK5X6 Pin Configuration
D
Absolute Maximum Ratings
SSSG
Symbol
VDS
VGS
ID@TC=25℃
ID@TC=100℃
ID@TA=25℃
ID@TA=70℃
IDM
EAS
IAS
PD@TC=25℃
PD@TA=25℃
TSTG
TJ
Thermal Data
Symbol
RθJA
RθJC
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V1
Continuous Drain Current, VGS @ 10V1
Continuous Drain Current, VGS @ 10V1
Continuous Drain Current, VGS @ 10V1
Pulsed Drain Current2
Single Pulse Avalanche Energy3
Avalanche Current
Total Power Dissipation4
Total Power Dissipation4
Storage Temperature Range
Operating Junction Temperature Range
Parameter
Thermal Resistance Junction-Ambient 1
Thermal Resistance Junction-Case1
Rating
30
±20
58
38
12
9.6
115
130
34
46
2
-55 to 150
-55 to 150
Units
V
V
A
A
A
A
A
mJ
A
W
W
℃
℃
Typ.
---
---
Max.
62
2.7
Unit
℃/W
℃/W
Rev A.03 D070411
1
1 Page Typical Characteristics
100
75
VGS=10V
VGS=7V
50 VGS=5V
VGS=4.5V
25 VGS=3V
0
0 0.5 1 1.5 2 2.5
VDS , Drain-to-Source Voltage (V)
Fig.1 Typical Output Characteristics
12
3
10
8
TJ=150℃ TJ=25℃
6
4
2
0
0 0.3 0.6
VSD , Source-to-Drain Voltage (V)
0.9
Fig.3 Forward Characteristics of reverse
1.8
1.4
1
0.6
0.2
-50
0 50 100
TJ ,Junction Temperature (℃ )
Fig.5 Normalized VGS(th) vs. TJ
150
QM3004M6
N-Ch 30V Fast Switching MOSFETs
Fig.2 On-Resistance vs. Gate-Source
10
ID=15A
8
6 VDS=15V
VDS=24V
4
2
0
0 6 QG , Tot1a2l Gate Ch1a8rge (nC) 24
Fig.4 Gate-Charge Characteristics
1.8
30
1.4
1.0
0.6
0.2
-50
0 50 100
TJ , Junction Temperature (℃)
Fig.6 Normalized RDSON vs. TJ
3
150
3Pages | |||
ページ | 合計 : 4 ページ | ||
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PDF ダウンロード | [ QM3004M6 データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
QM3004M3 | N-Ch 30V Fast Switching MOSFETs | UBIQ |
QM3004M6 | N-Ch 30V Fast Switching MOSFETs | UBIQ |
QM3004M6 | N-Ch 30V Fast Switching MOSFETs | UBIQ |