DataSheet.jp

11NK100Z の電気的特性と機能

11NK100ZのメーカーはSTMicroelectronicsです、この部品の機能は「STW11NK100Z」です。


製品の詳細 ( Datasheet PDF )

部品番号 11NK100Z
部品説明 STW11NK100Z
メーカ STMicroelectronics
ロゴ STMicroelectronics ロゴ 




このページの下部にプレビューと11NK100Zダウンロード(pdfファイル)リンクがあります。

Total 14 pages

No Preview Available !

11NK100Z Datasheet, 11NK100Z PDF,ピン配置, 機能
STW11NK100Z
STW11NK100Z
N-channel 1000V - 1.1- 8.3A - TO-247
Zener - Protected SuperMESH™ PowerMOSFET
General features
Type
VDSS
(@Tjmax)
RDS(on)
ID
Pw
STW11NK100Z 1000 V < 1.38 8.3 A 230W
Extremely high dv/dt capability
100% avalanche tested
Gate charge minimized
Very low intrinsic capacitances
Very good manufacturing repeatibility
Description
The SuperMESH™ series is obtained through an
extreme optimization of ST’s well established
strip-based PowerMESH™ layout. In addition to
pushing on-resistance significantly down, special
care is taken to ensure a very good dv/dt
capability for the most demanding applications.
Such series complements ST full range of high
voltage MOSFETs including revolutionary
MDmesh™ products.
Applications
Switching application
TO-247
Internal schematic diagram
Order codes
Part number
STW11NK100Z
Marking
W11NK100Z
Package
TO-247
Packaging
Tube
July 2006
Rev 2
1/14
www.st.com
14

1 Page





11NK100Z pdf, ピン配列
STW11NK100Z
1 Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Parameter
VDS
VDGR
VGS
ID
ID
IDM(1)
PTOT
Drain-source voltage (VGS = 0)
Drain-gate voltage (RGS = 20K)
Gate-source voltage
Drain current (continuous) at TC = 25°C
Drain current (continuous) at TC=100°C
Drain current (pulsed)
Total dissipation at TC = 25°C
Derating Factor
VESD (G-S) Gate source ESD(HBM-C=100pF, R=1,5K)
dv/dt(2) Peak diode recovery voltage slope
TJ Operating junction temperature
Tstg Storage temperature
1. Pulse width limited by safe operating area
2. ISD 8.3 A, di/dt 200A/µs, VDD V(BR)DSS, Tj TJMAX
Table 2. Thermal data
Symbol
Parameter
Rthj-case
Rthj-a
Tl
Thermal resistance junction-case Max
Thermal resistance junction-ambient Max
Maximum lead temperature for soldering
purpose
Table 3. Avalanche characteristics
Symbol
Parameter
Avalanche current, repetitive or not-repetitive
IAR (pulse width limited by Tj Max)
Single pulse avalanche energy
EAS (starting Tj=25°C, Id=Iar, Vdd=50V)
Electrical ratings
Value
1000
1000
± 30
8.3
5.2
33.2
230
1.85
6000
4.5
-55 to 150
Unit
V
V
V
A
A
A
W
W/°C
V
V/ns
°C
Value
0.54
50
300
Unit
°C/W
°C/W
°C
Value
8.3
550
Unit
A
mJ
3/14


3Pages


11NK100Z 電子部品, 半導体
Electrical characteristics
STW11NK100Z
Table 7. Source drain diode
Symbol
Parameter
Test conditions
ISD
ISDM(1)
VSD(2)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD=8.3A, VGS=0
ISD=8.3,
di/dt = 100A/µs,
VDD=80V, Tj=25°C
(see Figure 18)
ISD=8A,
di/dt = 100A/µs,
VDD=80V, Tj=150°C
(see Figure 18)
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration=300µs, duty cycle 1.5%
Min Typ. Max Unit
8.3 A
33.2 A
1.6 V
560 ns
4.48 µC
16 A
620 ns
4.57 µC
16 A
6/14

6 Page



ページ 合計 : 14 ページ
 
PDF
ダウンロード
[ 11NK100Z データシート.PDF ]


データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。


共有リンク

Link :


部品番号部品説明メーカ
11NK100Z

STW11NK100Z

STMicroelectronics
STMicroelectronics


www.DataSheet.jp    |   2020   |  メール    |   最新    |   Sitemap