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11NK100ZのメーカーはSTMicroelectronicsです、この部品の機能は「STW11NK100Z」です。 |
部品番号 | 11NK100Z |
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部品説明 | STW11NK100Z | ||
メーカ | STMicroelectronics | ||
ロゴ | |||
このページの下部にプレビューと11NK100Zダウンロード(pdfファイル)リンクがあります。 Total 14 pages
STW11NK100Z
STW11NK100Z
N-channel 1000V - 1.1Ω - 8.3A - TO-247
Zener - Protected SuperMESH™ PowerMOSFET
General features
Type
VDSS
(@Tjmax)
RDS(on)
ID
Pw
STW11NK100Z 1000 V < 1.38 Ω 8.3 A 230W
■ Extremely high dv/dt capability
■ 100% avalanche tested
■ Gate charge minimized
■ Very low intrinsic capacitances
■ Very good manufacturing repeatibility
Description
The SuperMESH™ series is obtained through an
extreme optimization of ST’s well established
strip-based PowerMESH™ layout. In addition to
pushing on-resistance significantly down, special
care is taken to ensure a very good dv/dt
capability for the most demanding applications.
Such series complements ST full range of high
voltage MOSFETs including revolutionary
MDmesh™ products.
Applications
■ Switching application
TO-247
Internal schematic diagram
Order codes
Part number
STW11NK100Z
Marking
W11NK100Z
Package
TO-247
Packaging
Tube
July 2006
Rev 2
1/14
www.st.com
14
1 Page STW11NK100Z
1 Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Parameter
VDS
VDGR
VGS
ID
ID
IDM(1)
PTOT
Drain-source voltage (VGS = 0)
Drain-gate voltage (RGS = 20KΩ)
Gate-source voltage
Drain current (continuous) at TC = 25°C
Drain current (continuous) at TC=100°C
Drain current (pulsed)
Total dissipation at TC = 25°C
Derating Factor
VESD (G-S) Gate source ESD(HBM-C=100pF, R=1,5KΩ)
dv/dt(2) Peak diode recovery voltage slope
TJ Operating junction temperature
Tstg Storage temperature
1. Pulse width limited by safe operating area
2. ISD ≤8.3 A, di/dt ≤200A/µs, VDD ≤V(BR)DSS, Tj ≤TJMAX
Table 2. Thermal data
Symbol
Parameter
Rthj-case
Rthj-a
Tl
Thermal resistance junction-case Max
Thermal resistance junction-ambient Max
Maximum lead temperature for soldering
purpose
Table 3. Avalanche characteristics
Symbol
Parameter
Avalanche current, repetitive or not-repetitive
IAR (pulse width limited by Tj Max)
Single pulse avalanche energy
EAS (starting Tj=25°C, Id=Iar, Vdd=50V)
Electrical ratings
Value
1000
1000
± 30
8.3
5.2
33.2
230
1.85
6000
4.5
-55 to 150
Unit
V
V
V
A
A
A
W
W/°C
V
V/ns
°C
Value
0.54
50
300
Unit
°C/W
°C/W
°C
Value
8.3
550
Unit
A
mJ
3/14
3Pages Electrical characteristics
STW11NK100Z
Table 7. Source drain diode
Symbol
Parameter
Test conditions
ISD
ISDM(1)
VSD(2)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD=8.3A, VGS=0
ISD=8.3,
di/dt = 100A/µs,
VDD=80V, Tj=25°C
(see Figure 18)
ISD=8A,
di/dt = 100A/µs,
VDD=80V, Tj=150°C
(see Figure 18)
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration=300µs, duty cycle 1.5%
Min Typ. Max Unit
8.3 A
33.2 A
1.6 V
560 ns
4.48 µC
16 A
620 ns
4.57 µC
16 A
6/14
6 Page | |||
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部品番号 | 部品説明 | メーカ |
11NK100Z | STW11NK100Z | STMicroelectronics |