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PDF 2302 Data sheet ( Hoja de datos )
| Número de pieza | 2302 | |
| Descripción | N-Channel MOSFET | |
| Fabricantes | ETC | |
| Logotipo |  |
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SOT-23-3 Plastic-Encapsulate Transistors
2302 MOSFET(N-Channel)
FEATURES
TrenchFET Power MOSFET
MARKING:A2SHB
MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
Symbol
Parameter
Value
Units
VDS Drain-Source voltage
20 V
VGS Gate-Source voltage
±10
V
ID Drain current
-2.9 A
PD Power Dissipation
1W
Tj Junction Temperature
150 ℃
Tstg
Storage Temperature
-55-150
℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃unless otherwise specified)
Parameter
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-body Leakage
Zero Gate Voltage Drain Current
Drain-Source On-Resistance
Forward Trans conductance
Dynamic Characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Capacitance
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Drain-Source Diode Characteristics
Diode Forward Voltage
Diode Forward Current
Symbol
V(BR)DSS
Vth(GS)
IGSS
IDSS
rDS(ON)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
Is
Test conditions
VGS=0V,ID=250uA
VDS= VGS, ID=250 uA
VDS=0V, VGS=±10V
VDS=20V, VGS=0V
VGS=2.5V, ID=2.5A
VGS=4.5V, ID=2.9A
VDS=5V, ID=2.9A
VDS=10V, VGS=0V,
f=1MHz
VDD=10V, ID=1A,
VGS=4.5V
RGEN =10Ω
VDS=10V, ID=3A,
VGS=2.5V,
VGS=0V, ID=1.3A
MIN
TYP
MAX
UNIT
20 V
0.4 0.7 1 V
±100
nA
1 uA
64 110 mΩ
89 140 mΩ
9.5 s
300
pF
120
80
10
50
17
10
4.0
0.65
1.2
15 nS
85 nS
45 nS
20 nS
10 nC
nC
nC
0.75 1.2
2.9
V
A
1/2
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet 2302.PDF ] | |
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