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PDF HM2302B Data sheet ( Hoja de datos )
| Número de pieza | HM2302B | |
| Descripción | N-Channel Trench Power MOSFET | |
| Fabricantes | H&M Semiconductor | |
| Logotipo |  |
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N-Channel Trench Power MOSFET
General Description
The HM2302B uses advanced trench technology to provide
excellent RDS(ON), low gate charge and operation with gate
voltages as low as 2.5V. This device is suitable for use as a
battery protection or in other switching application.
Features
● VDS = 20V,ID =2.5A
RDS(ON) < 60mΩ @ VGS =4.5V
RDS(ON) < 90mΩ @ VGS =2.5V
● High Power and current handing capability
● Lead free product is acquired
● Surface Mount Package
Application
● Battery protection
● Load switch
● Power management
HM2302B
Schematic Diagram
SOT-23 top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
A2sHB
HM2302B
SOT-23
Reel Size
Ø180mm
Table 1. Absolute Maximum Ratings (TA=25℃)
Symbol
Parameter
VDS Drain-Source Voltage (VGS=0V）
VGS Gate-Source Voltage (VDS=0V)
ID
IDM (pluse)
Drain Current-Continuous
Drain Current-Continuous@ Current-Pulsed (Note 1)
PD Maximum Power Dissipation
TJ,TSTG
Operating Junction and Storage Temperature Range
Notes 1.Repetitive Rating: Pulse width limited by maximum junction temperature
Table 2. Thermal Characteristic
Symbol
Parameter
RJA
Thermal Resistance, Junction-to-Ambient
Tape width
8mm
Quantity
3000units
Value
20
±12
2.5
10
1
-55 To 150
Unit
V
V
A
A
W
℃
Value
125
Unit
℃/W
-1-
Shenzhen H&M Semiconductor Co.Ltd
http：//www.hmsemi.com
1 page  
HM2302B
Figure11. Normalized Maximum Transient Thermal Impedance
SOT-23 Package Information
-5-
Shenzhen H&M Semiconductor Co.Ltd
http：//www.hmsemi.com
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet HM2302B.PDF ] | |
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