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PDF STL24N60M2 Data sheet ( Hoja de datos )
| Número de pieza | STL24N60M2 | |
| Descripción | N-channel Power MOSFET | |
| Fabricantes | STMicroelectronics | |
| Logotipo |  |
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STL24N60M2
N-channel 600 V, 0.186 Ω typ., 18 A MDmesh II Plus™ low Qg
Power MOSFET in a PowerFLAT™ 8x8 HV package
Datasheet − production data
Features
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Figure 1. Internal schematic diagram
D(3)
G(1)
S(2)
AM01476v1
Order code VDS @ TJmax RDS(on) max ID
STL24N60M2
650 V
0.21 Ω 18 A
• Extremely low gate charge
• Lower RDS(on) x area vs previous generation
• Low gate input resistance
• 100% avalanche tested
• Zener protected
Applications
• Switching applications
Description
This device is an N-channel Power MOSFET
developed using a new generation of MDmesh™
technology: MDmesh II Plus™ low Qg. This
revolutionary Power MOSFET associates a
vertical structure to the company's strip layout to
yield one of the world's lowest on-resistance and
gate charge. It is therefore suitable for the most
demanding high efficiency converters.
Order code
STL24N60M2
Table 1. Device summary
Marking
Package
24N60M2
PowerFLAT™ 8x8 HV
Packaging
Tape and reel
February 2014
This is information on a product in full production.
DocID024777 Rev 2
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www.st.com
15
1 page  
STL24N60M2
Electrical characteristics
Symbol
Table 7. Switching times
Parameter
Test conditions
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off delay time
Fall time
VDD = 300 V, ID = 9 A,
RG = 4.7 Ω, VGS = 10 V
(see Figure 14 and 19)
Min. Typ. Max. Unit
- 14 - ns
- 9 - ns
- 60 - ns
- 15 - ns
Symbol
Table 8. Source drain diode
Parameter
Test conditions
Min. Typ. Max. Unit
(1)
ISD Source-drain current
(1),(2)
ISDM
Source-drain current (pulsed)
(3)
VSD Forward on voltage
ISD = 18 A, VGS = 0
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 18 A, di/dt = 100 A/μs
VDD = 60 V (see Figure 16)
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 18 A, di/dt = 100 A/μs
VDD = 60 V, Tj = 150 °C
(see Figure 16)
1. The value is rated according to Rthj-case and limited by package.
2. Pulse width limited by safe operating area
3. Pulsed: pulse duration = 300 μs, duty cycle 1.5%
- 18 A
- 72 A
- 1.6 V
- 332
ns
-4
μC
- 24
A
- 450
ns
- 5.5
μC
- 25
A
DocID024777 Rev 2
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5 Page 
STL24N60M2
Package mechanical data
Dim.
A
A1
b
D
E
D2
E2
e
L
Table 9. PowerFLAT™ 8x8 HV mechanical data
mm
Min.
Typ.
0.80 0.90
0.00 0.02
0.95 1.00
8.00
8.00
7.05 7.20
4.15 4.30
2.00
0.40 0.50
Max.
1.00
0.05
1.05
7.30
4.40
0.60
Figure 21. PowerFLAT™ 8x8 HV recommended footprint (dimensions in mm.)
DocID024777 Rev 2
8222871_REV_C_footprint
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| PDF Descargar | [ Datasheet STL24N60M2.PDF ] | |
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