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BC817-40W の電気的特性と機能

BC817-40WのメーカーはON Semiconductorです、この部品の機能は「General Purpose NPN Transistor」です。


製品の詳細 ( Datasheet PDF )

部品番号 BC817-40W
部品説明 General Purpose NPN Transistor
メーカ ON Semiconductor
ロゴ ON Semiconductor ロゴ 




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BC817-40W Datasheet, BC817-40W PDF,ピン配置, 機能
BC817-40W
45 V, 0.5 A, General
Purpose NPN Transistor
ON Semiconductor’s BC817−40W is a General Purpose NPN
Transistor that is housed in the SC−70/SOT−323 package.
Features
AEC-Q101 Qualified and Consult Factory for PPAP Capable
This Device is Pb−Free, Halogen Free/BFR Free and is RoHS
Compliant
MAXIMUM RATINGS (TA = 25°C)
Rating
Symbol Value
Unit
Collector − Emitter Voltage
VCEO
45
V
Collector − Base Voltage
Emitter − Base Voltage
Collector Current − Continuous
THERMAL CHARACTERISTICS
VCBO
VEBO
IC
50 V
5.0 V
500 mAdc
Characteristic
Symbol
Max
Unit
Total Device Dissipation (Note 1)
Thermal Resistance,
Junction−to−Ambient (Note 1)
PD
RqJA
460 mW
272 °C/W
Junction and Storage Temperature
Range
TJ, Tstg − 55 to +150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR−4 Board, 1 oz. Cu, 100 mm2
www.onsemi.com
COLLECTOR
3
1
BASE
2
EMITTER
SC−70
CASE 419
STYLE 3
MARKING DIAGRAM
CE MG
G
1
CE = Specific Device Code
M = Date Code
G = Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
Device
BC817−40WT1G
Package
SC−70
(Pb−Free)
Shipping
3000 / Tape &
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2015
June, 2015 − Rev. 1
1
Publication Order Number:
BC817−40W/D

1 Page





BC817-40W pdf, ピン配列
BC817−40W
TYPICAL CHARACTERISTICS
700
150°C
600
500
400 25°C
VCE = 1 V
1
IC/IB = 10
0.1
25°C
150°C
−55°C
300
−55°C
200
0.01
100
0
0.001
0.01
0.1
IC, COLLECTOR CURRENT (A)
Figure 1. DC Current Gain vs. Collector
Current
1
1.1
1.0 IC/IB = 10
0.9
−55°C
0.8 25°C
0.7
0.6 150°C
0.5
0.4
0.3
0.2
0.0001
0.001
0.01
0.1
1
IC, COLLECTOR CURRENT (A)
Figure 3. Base Emitter Saturation Voltage vs.
Collector Current
0.001
0.001
0.01
0.1
1
IC, COLLECTOR CURRENT (A)
Figure 2. Collector Emitter Saturation Voltage
vs. Collector Current
1.2
1.1 VCE = 5 V
1.0
0.9 −55°C
0.8
0.7 25°C
0.6
0.5 150°C
0.4
0.3
0.2
0.0001
0.001
0.01
0.1
1
IC, COLLECTOR CURRENT (A)
Figure 4. Base Emitter Voltage vs. Collector
Current
1000
VCE = 1 V
TA = 25°C
100
10
0.1
1
10 100 1000
IC, COLLECTOR CURRENT (mA)
Figure 5. Current Gain Bandwidth Product vs.
Collector Current
www.onsemi.com
3


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共有リンク

Link :


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