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PDF uPA2550 Data sheet ( Hoja de datos )
| Número de pieza | uPA2550 | |
| Descripción | DUAL P-CHANNEL MOSFET | |
| Fabricantes | Renesas | |
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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
μ PA2550
DUAL P-CHANNEL MOSFET
FOR SWITCHING
DESCRIPTION
The μ PA2550 is dual P-channel MOSFETs designed for power
management applications of portable equipments, such as load
switch.
Dual P-channel MOSFETs are assembled in one package, to
contribute minimize the equipments.
PACKAGE DRAWING (Unit: mm)
2.9±0.1
0.65
8
5
A
0.17±0.05
0 to 0.025
FEATURES
• 1.8 V drive available
• Low on-state resistance
RDS(on)1 = 40 mΩ MAX. (VGS = −4.5 V, ID = −2.5 A)
RDS(on)2 = 60 mΩ MAX. (VGS = −2.5 V, ID = −2.5 A)
RDS(on)3 = 93 mΩ MAX. (VGS = −1.8 V, ID = −2.5 A)
• Built-in gate protection diode
• Small and surface mount package (8-pin VSOF (2429))
1
0.32±0.05
4
0.05 M S A
S
1: Source1
2: Gate1
3: Source2
4: Gate2
5, 6: Drain2
7, 8: Drain1
ORDERING INFORMATION
PART NUMBER
μ PA2550T1H-T1-AT Note
μ PA2550T1H-T2-AT Note
LEAD PLATING
Pure Sn
PACKING
8 mm embossed taping
3000 p/reel
PACKAGE
8-pin VSOF (2429)
Note Pb-free (This product does not contain Pb in the external electrode and other parts.)
Marking: 2550
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. G19179EJ1V0DS00 (1st edition)
Date Published March 2008 NS
Printed in Japan
2008
1 page  
μ PA2550
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
-25
Pulsed
-20
VGS = −4.5 V
-15 −2.5 V
-10
−1.8 V
-5
0
0 -0.5 -1 -1.5
VDS - Drain to Source Voltage - V
FORWARD TRANSFER CHARACTERISTICS
-100
-10
VDS = −10 V
Pulsed
-1
-0.1
-0.01
TA = 125°C
75°C
25°C
−25°C
-0.001
0
-0.5 -1 -1.5 -2
VGS - Gate to Source Voltage - V
-2.5
GATE TO SOURCE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
-1.4
-1.2 VDS = −10 V
ID = −1 mA
-1
-0.8
-0.6
-0.4
-0.2
0
-50
0 50 100
Tch - Channel Temperature - °C
150
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
100
VDS = −10 V
Pulsed
TA = −25°C
10 25°C
1
0.1
-0.01
75°C
125°C
-0.1 -1
ID - Drain Current - A
-10
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
100
Pulsed
80
60 VGS = −1.8 V
40 −2.5 V
20 −4.5 V
0
-0.01
-0.1 -1 -10
ID - Drain Current - A
-100
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
100
ID = −2.5 A
Pulsed
80
60
40
20
0
0 -2 -4 -6 -8
VGS - Gate to Source Voltage - V
Data Sheet G19179EJ1V0DS
5
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet uPA2550.PDF ] | |
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