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IRF5851PbFのメーカーはInternational Rectifierです、この部品の機能は「Power MOSFET ( Transistor )」です。 |
部品番号 | IRF5851PbF |
| |
部品説明 | Power MOSFET ( Transistor ) | ||
メーカ | International Rectifier | ||
ロゴ | |||
このページの下部にプレビューとIRF5851PbFダウンロード(pdfファイル)リンクがあります。 Total 14 pages
l Ultra Low On-Resistance
l Dual N and P Channel MOSFET
l Surface Mount
l Available in Tape & Reel
l Low Gate Charge
l Lead-Free
l Halogen-Free
PD-95341A
IRF5851PbF
HEXFET® Power MOSFET
*
6
'
6
VDSS
N-Ch
20V
P-Ch
-20V
*
' RDS(on) 0.090Ω 0.135Ω
Description
These N and P channel MOSFETs from International Rectifier utilize advanced
processing techniques to achieve the extremely low on-resistance per silicon
area. This benefit provides the designer with an extremely efficient device for
use in battery and load management applications.
This Dual TSOP-6 package is ideal for applications where printed circuit
board space is at a premium and where maximum functionality is required.
With two die per package, the IRF5851 can provide the functionality of two
SOT-23 packages in a smaller footprint. Its unique thermal design and
RDS(on) reduction enables an increase in current-handling capability.
TSOP-6
Absolute Maximum Ratings
VDS
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
VGS
TJ, TSTG
Parameter
Drain-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Junction and Storage Temperature Range
Thermal Resistance
RθJA
Parameter
Maximum Junction-to-Ambient
www.irf.com
Max.
N-Channel
P-Channel
20 -20
2.7 -2.2
2.2 -1.7
11 -9.0
0.96
0.62
7.7
± 12
-55 to + 150
Units
A
W
mW/°C
V
°C
Typ.
–––
Max.
130
Units
°C/W
1
04/20/10
1 Page 100
10
VGS
TOP 7.5V
4.5V
3.5V
3.0V
2.5V
2.0V
1.75V
BOTTOM 1.5V
N-Channel
IRF5851PbF
100
10
VGS
TOP 7.5V
4.5V
3.5V
3.0V
2.5V
2.0V
1.75V
BOTTOM 1.5V
1
1.50V
0.1
0.1
20µs PULSE WIDTH
TJ = 25 °C
1 10
VDS , Drain-to-Source Voltage (V)
100
Fig 1. Typical Output Characteristics
1 1.50V
0.1
0.1
20µs PULSE WIDTH
TJ= 150 °C
1 10
VDS , Drain-to-Source Voltage (V)
100
Fig 2. Typical Output Characteristics
100
10 TJ = 25° C
TJ = 150° C
1
0.1
1.5
V DS = 15V
20µs PULSE WIDTH
2.0 2.5
VGS, Gate-to-Source Voltage (V)
3.0
Fig 3. Typical Transfer Characteristics
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2.0 ID = 2.7A
1.5
1.0
0.5
0.0 VGS= 4.5V
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ, Junction Temperature ( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3
3Pages IRF5851PbF
0.14
N-Channel
0.30
0.12
0.10
0.08 ID = 2.7A
0.06
2.0
3.0 4.0 5.0 6.0 7.0
VGS, Gate -to -Source Voltage (V)
8.0
Fig 11. Typical On-Resistance Vs. Gate
Voltage
0.20
0.10
VGS = 2.5V
0.00
0
VGS = 4.5V
2 4 6 8 10
ID , Drain Current (A)
12
Fig 12. Typical On-Resistance Vs. Drain
Current
4.5 V
QGS
VG
QG
QGD
Charge
Fig 13a. Basic Gate Charge Waveform
6
Current Regulator
Same Type as D.U.T.
50KΩ
12V .2µF
.3µF
D.U.T.
+
-VDS
VGS
3mA
IG ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
www.irf.com
6 Page | |||
ページ | 合計 : 14 ページ | ||
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部品番号 | 部品説明 | メーカ |
IRF5851PbF | Power MOSFET ( Transistor ) | International Rectifier |