(PDF) 1S1886 Datasheet - Silicon Diffused Type Rectifier

Número de pieza	1S1886
Descripción	Silicon Diffused Type Rectifier
Fabricantes	Toshiba Semiconductor
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1. 200V, Rectifier Diode - EIC Hay una vista previa y un enlace de descarga de 1S1886 (archivo pdf) en la parte inferior de esta página. Total 3 Páginas
No Preview Available ! TOSHIBA RECTIFIER SILICON DIFFUSED TYPE 1S1829,1S1886 GENERAL PURPOSE RECTIFIER APPLICATIONS 1S1829,1S1886 Unit: mm l Average Forward Current l Repetitive Peak Reverse Voltage l Plastic Mold Package : IF (AV) = 1.0A (Ta = 65°C) : VRRM = 200, 800V MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Repetitive Peak Reverse Voltage 1S1886 1S1829 Average Forward Current (Ta = 60°C) Peak One Cycle Surge Forward Current 1S1829 1S1886 Junction Temperature Storage Temperature Range SYMBOL VRRM IF (AV) IFSM Tj Tstg RATINGS 200 800 1.0 45 (50Hz) 60 (50Hz) −40~150 −40~150 ELECTRICAL CHARACTERISTICS (Ta = 25°C) UNIT V A A °C °C JEDEC JEITA TOSHIBA Weight: 0.42g DO−15 SC−39 3−3B1A CHARACTERISTIC Peak ForwardVoltage Repetitive Peak Reverse Current Thermal Resistance (Junction to Ambient) SYMBOL TEST CONDITION VFM IRRM (1) IRRM (2) Rth (j−a) IFM = 1.5A VRRM = Rated VRRM = Rated, Tj = 150°C DC MIN MAX UNIT ― 1.2 V ― 10 µA ― 400 ― 100 °C / W MARKING 1 2001-07-09 1 page

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PDF 1S1886 Data sheet ( Hoja de datos )