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Número de pieza | 1R5DL41A | |
Descripción | Silicon Epitaxial Junction Type High Efficiency Rectifier | |
Fabricantes | Toshiba Semiconductor | |
Logotipo | ||
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No Preview Available ! 1R5DL41A
TOSHIBA High Efficiency Rectifier (HED) Silicon Epitaxial Junction Type
1R5DL41A
Switching Mode Power Supply Applications
· Repetitive Peak Reverse Voltage: VRRM = 200 V
· Average Forward Current: IF (AV) = 1.5 A (Ta = 25°C)
· Very Fast Reverse-Recovery Time: trr = 35 ns (max)
· Low Forward Voltage: VFM = 0.98 V (max)
· Available to Reduce Switching Losses and Output Noise.
Unit: mm
Maximum Ratings (Ta = 25°C)
Characteristics
Repetitive peak reverse voltage
Average forward current (Ta = 25°C)
Peak one cycle surge forward current
(non-repetitive)
Junction temperature
Storage temperature
Symbol
VRRM
IF (AV)
IFSM
Tj
Tstg
Rating
200
1.5
60 (50 Hz)
66 (60 Hz)
-40 to 150
-40 to 150
Unit
V
A
A
°C
°C
Electrical Characteristics (Ta = 25°C)
Characteristics
Peak forward voltage
Repetitive peak reverse current
Reverse recovery time
Forward recovery time
Thermal resistance
Thermal resistance
Symbol
VFM
IRRM
trr
tfr
Rth (j-a)
Rth (j- l)
Test Condition
IFM = 1.5 A
VRRM = 200 V
IF = 1 A, di/dt = -30 A/ms
IF = 1.0 A
Junction to Ambient
Junction to Lead
Marking
JEDEC
―
JEITA
―
TOSHIBA
3-4B1A
Weight: 0.47 g (typ.)
Min Typ. Max Unit
¾ ¾ 0.98 V
¾ ¾ 100 mA
¾ ¾ 35 ns
¾ ¾ 100 ns
¾ ¾ 100 °C/W
¾ ¾ 30 °C/W
Type Code Lot No.
DLA
Cathode Mark
Month (starting from alphabet A)
Year (last number of the christian era)
Color: Silver
Code
DLA
Type
1R5DL41A
1 2002-09-18
1 page |
Páginas | Total 3 Páginas | |
PDF Descargar | [ Datasheet 1R5DL41A.PDF ] |
Número de pieza | Descripción | Fabricantes |
1R5DL41A | Silicon Epitaxial Junction Type High Efficiency Rectifier | Toshiba Semiconductor |
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