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PDF IRFP254N Data sheet ( Hoja de datos )
| Número de pieza | IRFP254N | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | Vishay | |
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Power MOSFET
IRFP254N, SiHFP254N
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
Qg (Max.) (nC)
Qgs (nC)
Qgd (nC)
Configuration
250
VGS = 10 V
100
17
44
Single
0.125
D
TO-247
S
D
G
G
S
N-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
FEATURES
• Advanced Process Technology
• Dynamic dV/dt Rating
• 175 °C Operating Temperature
• Fully Avalanche Rated
• Fast Switching
• Ease of Paralleling
• Simple Drive Requirements
• Lead (Pb)-free Available
Available
RoHS*
COMPLIANT
DESCRIPTION
Fifth generation Power MOSFETs from Vishay utilize
advanced processing techniques to achieve extremely low
on-resistance per silicon area. This benefit, combined with
the fast switching speed and ruggedized device design that
these Power MOSFETs are well known for, provides the
designer with an extremely efficient and reliable device for
use in a wide variety of applications.
The TO-247 package is preferred for commercial-industrial
applications where higher power levels preclude the use of
TO-220 devices. The TO-247 is similar but superior to the
earlier TO-218 package because of its isolated mounting
hole.
TO-247
IRFP254NPbF
SiHFP254N-E3
IRFP254N
SiHFP254N
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Currenta
Linear Derating Factor
Single Pulse Avalanche Energyb
Repetitive Avalanche Currenta
Repetitive Avalanche Energya
Maximum Power Dissipation
Peak Diode Recovery dV/dtc
VGS at 10 V
TC = 25 °C
TC = 100 °C
TC = 25 °C
VDS
VGS
ID
IDM
EAS
IAR
EAR
PD
dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
for 10 s
TJ, Tstg
Mounting Torque
6-32 or M3 screw
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Starting TJ = 25 °C, L = 3.1 mH, RG = 25 Ω, IAS = 14 A, VGS = 10 V.
c. ISD ≤ 14 A, dI/dt ≤ 460 A/µs, VDD ≤ VDS, TJ ≤ 175 °C.
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
LIMIT
250
± 20
23
16
92
1.5
300
14
22
220
7.4
- 55 to + 175
300d
10
1.1
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
lbf · in
N·m
Document Number: 91213
S-Pending-Rev. A, 24-Jun-08
WORK-IN-PROGRESS
www.vishay.com
1
1 page  
IRFP254N, SiHFP254N
Vishay Siliconix
25
20
15
10
5
0
25 50 75 100 125 150 175
TC, Case Temperature (°C)
Fig. 9 - Maximum Drain Current vs. Case Temperature
1
VDS
VGS
RG
RD
D.U.T.
VGS
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
+- VDD
Fig. 10a - Switching Time Test Circuit
VDS
90 %
10 %
VGS
td(on) tr
td(off) tf
Fig. 10b - Switching Time Waveforms
D = 0.50
0.20
0.1
0.10
0.05
0.02
0.01
0.01
0.00001
PDM
(THERMAL RESPONSE)
0.0001
0.001
t 1, Rectangular Pulse Duration (s)
t1
t2
Notes:
1. Duty factor D = t1/ t2
2. Peak TJ = PDM x ZthJC + TC
0.01 0.1
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
Document Number: 91213
S-Pending-Rev. A, 24-Jun-08
www.vishay.com
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet IRFP254N.PDF ] | |
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