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PDF IRFIB7N50L Data sheet ( Hoja de datos )
| Número de pieza | IRFIB7N50L | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | Vishay | |
| Logotipo |  |
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IRFIB7N50L, SiHFIB7N50L
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
Qg (Max.) (nC)
Qgs (nC)
Qgd (nC)
Configuration
500
VGS = 10 V
92
24
44
Single
0.320
TO-220 FULLPAK
D
G
GDS
ORDERING INFORMATION
Package
Lead (Pb)-free
S
N-Channel MOSFET
FEATURES
• Super Fast Body Diode Eliminates the Need for
External Diodes in ZVS Applications
• Lower Gate Charge Results in Simpler Drive
Reqirements
RoHS
COMPLIANT
• Enhanced dV/dt Capabilities Offer Improved
Ruggedness
• Higher Gate Voltage Threshold Offers Improved Noise
Immunity
• Lead (Pb)-free
APPLICATIONS
• Zero Voltage Switching SMPS
• Telecom and Server Power Supplies
• Uninterruptible Power Supplies
• Motor Control Applications
TO-220 FULLPAK
IRFIB7N50LPbF
SiHFIB7N50L-E3
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current
Pulsed Drain Currenta
Linear Derating Factor
VGS at 10 V
TC = 25 °C
TC = 100 °C
ID
IDM
Single Pulse Avalanche Energyb
Avalanche Currenta
Repetitive Avalanche Energya
EAS
IAR
EAR
Maximum Power Dissipation
Peak Diode Recovery dV/dtc
TC = 25 °C
PD
dV/dt
Operating Junction and Storage Temperature Range
TJ, Tstg
Soldering Recommendations (Peak Temperature)
for 10 s
Mounting Torque
6-32 or M3 screw
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 12).
b. Starting TJ = 25 °C, L = 24 mH, RG = 25 Ω, IAS = 6.8 A (see fig. 14).
c. ISD ≤ 6.8 A, dI/dt ≤ 650 A/µs, VDD ≤ VDS, dV/dt = 24 V/ns, TJ ≤ 150 °C.
d. 1.6 mm from case.
LIMIT
500
± 30
6.8
4.3
27
0.37
550
6.8
4.6
46
24
- 55 to + 150
300d
10
1.1
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
lbf · in
N·m
Document Number: 91177
S09-0063-Rev. A, 02-Feb-09
www.vishay.com
1
1 page  
100
10
OPERATION IN THIS AREA
LIMITED BY RDS(on)
100μsec
1
DC
0.1
Tc = 25°C
Tj = 150°C
Single Pulse
0.01
1 10
1msec
10msec
100 1000
VDS, Drain-to-Source Voltage (V)
10000
Fig. 9 - Maximum Safe Operating Area
7
6
5
4
3
2
1
0
25 50 75 100 125 150
TC , Case Temperature (°C)
Fig. 10 - Maximum Drain Current vs. Case Temperature
IRFIB7N50L, SiHFIB7N50L
Vishay Siliconix
VDS
VGS
RG
RD
D.U.T.
10 V
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
+- VDD
Fig. 11a - Switching Time Test Circuit
VDS
90 %
10 %
VGS
td(on) tr
td(off) tf
Fig. 11b - Switching Time Waveforms
Document Number: 91177
S09-0063-Rev. A, 02-Feb-09
www.vishay.com
5
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet IRFIB7N50L.PDF ] | |
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