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IRF634N の電気的特性と機能

IRF634NのメーカーはVishayです、この部品の機能は「Power MOSFET ( Transistor )」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRF634N
部品説明 Power MOSFET ( Transistor )
メーカ Vishay
ロゴ Vishay ロゴ 




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IRF634N Datasheet, IRF634N PDF,ピン配置, 機能
IRF634N, IRF634NL, IRF634NS, SiHF634N, SiHF634NL, SiHF634NS
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V)
250
RDS(on) (Ω)
VGS = 10 V
Qg (Max.) (nC)
34
Qgs (nC)
6.5
Qgd (nC)
16
Configuration
Single
0.435
I2PAK (TO-262)
TO-220
D
S
D
G
S
D
GG
D2PAK (TO-263)
S
N-Channel MOSFET
GD
S
FEATURES
• Advanced Process Technology
• Dynamic dV/dt Rating
• 175 °C Operating Temperature
• Fast Switching
• Fully Avalanche Rated
• Ease of Paralleling
• Simple Drive Requirements
• Lead (Pb)-free Available
Available
RoHS*
COMPLIANT
DESCRIPTION
Fifth generation Power MOSFETs from Vishay utilize
advanced processing techniques to achieve extremely low
on-resistance per silicon area. This benefit, combined with
the fast switching speed and ruggedized device design that
Power MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use in a
wide variety of applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 W. The low thermal resistance
and low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
The D2PAK (TO-263) is a surface mount power package
capable of accommodating die sizes up to HEX-4. It provides
the highest power capability and the lowest possible
on-resistance in any existing surface mount package. The
D2PAK (TO-263) is suitable for high current applications
because of its low internal connection resistance and can
dissipate up to 2.0 W in a typical surface mount application.
The through-hole version (IRF634NL, SiHF634NL) is
available for low-profile application.
ORDERING INFORMATION
Package
TO-220
Lead (Pb)-free
IRF634NPbF
SiHF634N-E3
SnPb
IRF634N
SiHF634N
Note
a. See device orientation.
D2PAK (TO-263)
IRF634NSPbF
SiHF634NS-E3
IRF634NS
SiHF634NS
D2PAK (TO-263)
IRF634NSTRLPbFa
SiHF634NSTL-E3a
IRF634NSTRLa
SiHF634NSTLa
D2PAK (TO-263)
IRF634NSTRRPbFa
SiHF634NSTR-E3a
IRF634NSTRRa
SiHF634NSTRa
I2PAK (TO-262)
IRF634NLPbF
SiHF634NL-E3
-
-
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91033
S-82999-Rev. A, 12-Jan-09
www.vishay.com
1

1 Page





IRF634N pdf, ピン配列
IRF634N, IRF634NL, IRF634NS, SiHF634N, SiHF634NL, SiHF634NS
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
TEST CONDITIONS
MIN. TYP. MAX. UNIT
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
LD
Internal Source Inductance
Drain-Source Body Diode Characteristics
LS
VGS = 0 V,
VDS = 25 V,
f = 1.0 MHz, see fig. 5
VGS = 10 V
ID = 4.8 A, VDS = 200 V,
see fig. 6 and 13b
VDD = 125 V, ID = 4.8 A,
RG = 1.3 Ω, see fig. 10b
Between lead,
6 mm (0.25") from
package and center of
die contact
D
G
S
-
-
-
-
-
-
-
-
-
-
-
-
620 -
84 - pF
23 -
- 34
- 6.5 nC
- 16
8.4 -
16 -
ns
28 -
15 -
4.5 -
nH
7.5 -
Continuous Source-Drain Diode Current
IS
MOSFET symbol
showing the
Pulsed Diode Forward Currenta
integral reverse
ISM p - n junction diode
D
G
S
- - 8.0
A
- - 32
Body Diode Voltage
VSD
TJ = 25 °C, IS = 4.8 A, VGS = 0 Vb
- - 1.3 V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
trr
Qrr
- 130 200 ns
TJ = 25 °C, IF = 4.8 A, dI/dt = 100 A/µsb - 650 980 nC
Forward Turn-On Time
ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width 300 µs; duty cycle 2 %.
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
102 VGS
Top 15 V
10 V
8.0 V
10
7.0 V
6.0 V
5.5 V
5.0 V
Bottom 4.5 V
1
4.5 V
0.1
10-2
0.1
20 µs Pulse Width
TC = 25 °C
1 10 102
91033_01
VDS, Drain-to-Source Voltage (V)
Fig. 1 - Typical Output Characteristics
102
Top
VGS
15 V
10 V
8.0 V
7.0 V
10 6.0 V
5.5 V
5.0 V
Bottom 4.5 V
1
4.5 V
0.1
0.1
20 µs Pulse Width
TC = 175 °C
1 10 102
91033_02
VDS, Drain-to-Source Voltage (V)
Fig. 2 - Typical Output Characteristics
Document Number: 91033
S-82999-Rev. A, 12-Jan-09
www.vishay.com
3


3Pages


IRF634N 電子部品, 半導体
IRF634N, IRF634NL, IRF634NS, SiHF634N, SiHF634NL, SiHF634NS
Vishay Siliconix
10
1 D = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
10-2
10-5
91033_11
PDM
Single Pulse
(Thermal Response)
t1
t2
Notes:
1. Duty Factor, D = t1/t2
2. Peak Tj = PDM x ZthJC + TC
10-4
10-3
10-2
0.1
t1, Rectangular Pulse Duration (s)
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
15 V
VDS L
Driver
RG
20 V
tp
D.U.T
IAS
0.01 Ω
+
- VDAD
Fig. 12a - Unclamped Inductive Test Circuit
VDS
tp
IAS
Fig. 12b - Unclamped Inductive Waveforms
www.vishay.com
6
200
ID
Top 2.0 A
160 3.4 A
Bottom 4.8 A
120
80
40
0
25 50 75 100 125 150 175
91033_12c
Starting TJ, Junction Temperature (°C)
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
Document Number: 91033
S-82999-Rev. A, 12-Jan-09

6 Page



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