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IRFB16N50K の電気的特性と機能

IRFB16N50KのメーカーはInternational Rectifierです、この部品の機能は「Power MOSFET ( Transistor )」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRFB16N50K
部品説明 Power MOSFET ( Transistor )
メーカ International Rectifier
ロゴ International Rectifier ロゴ 




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IRFB16N50K Datasheet, IRFB16N50K PDF,ピン配置, 機能
PD - 95855
SMPS MOSFET IRFB16N50K
Applications
l Switch Mode Power Supply (SMPS)
l Uninterruptible Power Supply
l High Speed Power Switching
l Hard Switched and High Frequency
Circuits
Benefits
l Low Gate Charge Qg results in Simple Drive
Requirement
l Improved Gate, Avalanche and Dynamic dv/dt
Ruggedness
l Fully Characterized Capacitance and Avalanche
Voltage and Current
l Low RDS(on)
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V
cID @ TC = 100°C Continuous Drain Current, VGS @ 10V
IDM Pulsed Drain Current
PD @TC = 25°C Power Dissipation
VGS
dv/dt
TJ
TSTG
Linear Derating Factor
Gate-to-Source Voltage
ePeak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torqe, 6-32 or M3 screw
HEXFET® Power MOSFET
VDSS RDS(on) typ. ID
500V
285m:
17A
S
D
G
TO-220AB
Max.
17
11
68
280
2.3
± 30
8.0
-55 to + 150
300 (1.6mm from case )
y y10 lbf in (1.1N m)
Units
A
W
W/°C
V
V/ns
°C
Avalanche Characteristics
Parameter
dEAS Single Pulse Avalanche Energy
ÃcIAR Avalanche Current
cEAR Repetitive Avalanche Energy
Typ.
–––
–––
–––
Max.
310
17
28
Units
mJ
A
mJ
Thermal Resistance
Parameter
RθJC
RθCS
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
RθJA Junction-to-Ambient
www.irf.com
Typ.
–––
0.50
–––
Max.
0.44
–––
62
Units
°C/W
1
03/11/04

1 Page





IRFB16N50K pdf, ピン配列
IRFB16N50K
100
10
TOP
BOTTOM
VGS
15V
10V
8.0V
7.5V
7.0V
6.5V
6.0V
5.5V
1
5.5V
0.1
0.1
60µs PULSE WIDTH
Tj = 25°C
1 10
VDS, Drain-to-Source Voltage (V)
100
Fig 1. Typical Output Characteristics
100
10
TOP
BOTTOM
VGS
15V
10V
8.0V
7.5V
7.0V
6.5V
6.0V
5.5V
1
5.5V
0.1
0.1
60µs PULSE WIDTH
Tj = 150°C
1 10
VDS, Drain-to-Source Voltage (V)
100
Fig 2. Typical Output Characteristics
100
TJ = 150°C
10
TJ = 25°C
VDS = 100V
60µs PULSE WIDTH
1.0
4 5 6 7 8 9 10 11 12 13 14 15 16
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
www.irf.com
3.0
ID = 17A
2.5 VGS = 10V
2.0
1.5
1.0
0.5
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Junction Temperature (°C)
Fig 4. Normalized On-Resistance
vs. Temperature
3


3Pages


IRFB16N50K 電子部品, 半導体
IRFB16N50K
600
ID
500 TOP 7.6A
11A
BOTTOM 17A
400
300
200
100
0
25 50 75 100 125 150
Starting TJ , Junction Temperature (°C)
Fig 12. Maximum Avalanche Energy
vs. Drain Current
15V
VDS
L
DRIVER
RG
20V
tp
D.U.T
IAS
0.01
+
- VDD
A
Fig 13a. Unclamped Inductive Test Circuit
V(BR)DSS
tp
Current Regulator
Same Type as D.U.T.
50K
12V .2µF
.3µF
D.U.T.
+
-VDS
VGS
3mA
IG ID
Current Sampling Resistors
Fig 14a. Gate Charge Test Circuit
6
IAS
Fig 13b. Unclamped Inductive Waveforms
VGS
QGS
VG
QG
QGD
Charge
Fig 14b. Basic Gate Charge Waveform
www.irf.com

6 Page



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共有リンク

Link :


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