|
|
Número de pieza | IRFB16N50K | |
Descripción | Power MOSFET ( Transistor ) | |
Fabricantes | International Rectifier | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de IRFB16N50K (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
No Preview Available ! PD - 95855
SMPS MOSFET IRFB16N50K
Applications
l Switch Mode Power Supply (SMPS)
l Uninterruptible Power Supply
l High Speed Power Switching
l Hard Switched and High Frequency
Circuits
Benefits
l Low Gate Charge Qg results in Simple Drive
Requirement
l Improved Gate, Avalanche and Dynamic dv/dt
Ruggedness
l Fully Characterized Capacitance and Avalanche
Voltage and Current
l Low RDS(on)
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V
cID @ TC = 100°C Continuous Drain Current, VGS @ 10V
IDM Pulsed Drain Current
PD @TC = 25°C Power Dissipation
VGS
dv/dt
TJ
TSTG
Linear Derating Factor
Gate-to-Source Voltage
ePeak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torqe, 6-32 or M3 screw
HEXFET® Power MOSFET
VDSS RDS(on) typ. ID
500V
285m:
17A
S
D
G
TO-220AB
Max.
17
11
68
280
2.3
± 30
8.0
-55 to + 150
300 (1.6mm from case )
y y10 lbf in (1.1N m)
Units
A
W
W/°C
V
V/ns
°C
Avalanche Characteristics
Parameter
dEAS Single Pulse Avalanche Energy
ÃcIAR Avalanche Current
cEAR Repetitive Avalanche Energy
Typ.
–––
–––
–––
Max.
310
17
28
Units
mJ
A
mJ
Thermal Resistance
Parameter
RθJC
RθCS
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
RθJA Junction-to-Ambient
www.irf.com
Typ.
–––
0.50
–––
Max.
0.44
–––
62
Units
°C/W
1
03/11/04
1 page IRFB16N50K
20
15
10
5
0
25
50 75 100 125
TC , Case Temperature (°C)
150
Fig 9. Maximum Drain Current vs.
Case Temperature
VDS
VGS
RG
RD
D.U.T.
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
+-VDD
Fig 10a. Switching Time Test Circuit
VDS
90%
10%
VGS
td(on) tr
td(off) tf
Fig 10b. Switching Time Waveforms
1
D = 0.50
0.1 0.20
0.10
0.05
0.01 0.02
0.01
SINGLE PULSE
( THERMAL RESPONSE )
0.001
1E-006
1E-005
0.0001
0.001
0.01
t1 , Rectangular Pulse Duration (sec)
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.1 1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
www.irf.com
5
5 Page |
Páginas | Total 8 Páginas | |
PDF Descargar | [ Datasheet IRFB16N50K.PDF ] |
Número de pieza | Descripción | Fabricantes |
IRFB16N50K | Power MOSFET ( Transistor ) | Vishay |
IRFB16N50K | Power MOSFET ( Transistor ) | International Rectifier |
IRFB16N50KPbF | Power MOSFET ( Transistor ) | International Rectifier |
Número de pieza | Descripción | Fabricantes |
SLA6805M | High Voltage 3 phase Motor Driver IC. |
Sanken |
SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
Analog Devices |
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |