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IRFB16N50KのメーカーはVishayです、この部品の機能は「Power MOSFET ( Transistor )」です。 |
部品番号 | IRFB16N50K |
| |
部品説明 | Power MOSFET ( Transistor ) | ||
メーカ | Vishay | ||
ロゴ | |||
このページの下部にプレビューとIRFB16N50Kダウンロード(pdfファイル)リンクがあります。 Total 8 pages
IRFB16N50K, SiHFB16N50K
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
Qg (Max.) (nC)
Qgs (nC)
Qgd (nC)
Configuration
500
VGS = 10 V
89
27
43
Single
0.285
D
TO-220
G
S
D
G
S
N-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
FEATURES
• Low Gate Charge Qg Results in Simple Drive
Requirement
Available
• Improved Gate, Avalanche and Dynamic dV/dt
RoHS*
COMPLIANT
Ruggedness
• Fully Characterized Capacitance and Avalanche Voltage
and Current
• Low RDS(on)
• Lead (Pb)-free Available
APPLICATIONS
• Switch Mode Power Supply (SMPS)
• Uninterruptible Power Supply
• High Speed Power Switching
• Hard Switched and High Frequency Circuits
TO-220
IRFB16N50KPbF
SiHFB16N50K-E3
IRFB16N50K
SiHFB16N50K
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Currenta
VGS at 10 V
TC = 25 °C
TC = 100 °C
VDS
VGS
ID
IDM
Linear Derating Factor
Single Pulse Avalanche Energyb
Repetitive Avalanche Currenta
Repetitive Avalanche Energya
Maximum Power Dissipation
Peak Diode Recovery dV/dtc
TC = 25 °C
EAS
IAR
EAR
PD
dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
for 10 s
TJ, Tstg
Mounting Torque
6-32 or M3 screw
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature.
b. Starting TJ = 25 °C, L = 2.2 mH, RG = 25 Ω, IAS = 17 A.
c. ISD ≤ 17 A, dI/dt ≤ 500 A/µs, VDD ≤ VDS, TJ ≤ 150 °C.
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91096
S09-0015-Rev. A, 19-Jan-09
LIMIT
500
± 30
17
11
68
2.3
310
17
28
280
11
- 55 to + 150
300d
10
1.1
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
lbf · in
N·m
www.vishay.com
1
1 Page IRFB16N50K, SiHFB16N50K
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100
10
TOP
BOTTOM
VGS
15V
10V
8.0V
7.5V
7.0V
6.5V
6.0V
5.5V
100
10
TJ = 150°C
1
5.5V
0.1
0.1
60µs PULSE WIDTH
Tj = 25°C
1 10 100
VDS, Drain-to-Source Voltage (V)
Fig. 1 - Typical Output Characteristics
TJ = 25°C
VDS = 100V
60µs PULSE WIDTH
1.0
4 5 6 7 8 9 10 11 12 13 14 15 16
VGS, Gate-to-Source Voltage (V)
Fig. 3 - Typical Transfer Characteristics
100
10
TOP
BOTTOM
VGS
15V
10V
8.0V
7.5V
7.0V
6.5V
6.0V
5.5V
1
5.5V
0.1
0.1
60µs PULSE WIDTH
Tj = 150°C
1 10 100
VDS, Drain-to-Source Voltage (V)
Fig. 2 - Typical Output Characteristics
3.0
ID = 17A
2.5 VGS = 10V
2.0
1.5
1.0
0.5
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Junction Temperature (°C)
Fig. 4 - Normalized On-Resistance vs. Temperature
Document Number: 91096
S09-0015-Rev. A, 19-Jan-09
www.vishay.com
3
3Pages IRFB16N50K, SiHFB16N50K
Vishay Siliconix
600
ID
500 TOP 7.6A
11A
BOTTOM 17A
400
300
200
100
0
25 50 75 100 125 150
Starting TJ , Junction Temperature (°C)
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
VGS
QGS
VG
QG
QGD
Charge
Fig. 13a - Basic Gate Charge Waveform
Current regulator
Same type as D.U.T.
12 V
50 kΩ
0.2 µF
0.3 µF
+
D.U.T. - VDS
VGS
3 mA
IG ID
Current sampling resistors
Fig. 13b - Gate Charge Test Circuit
www.vishay.com
6
Document Number: 91096
S09-0015-Rev. A, 19-Jan-09
6 Page | |||
ページ | 合計 : 8 ページ | ||
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PDF ダウンロード | [ IRFB16N50K データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
IRFB16N50K | Power MOSFET ( Transistor ) | Vishay |
IRFB16N50K | Power MOSFET ( Transistor ) | International Rectifier |
IRFB16N50KPbF | Power MOSFET ( Transistor ) | International Rectifier |